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MARKETING PART NUMBER CY7C420/CY7C421 CY7C424/CY7C425 CY7C428/CY7C429


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CASCADEABLE FIFOS
MARKETING PART NUMBER CY7C420/CY7C421 CY7C424/CY7C425 CY7C428/CY7C429 DEVICE DESCRIPTION Cascadeable FIFO 1024 Cascadeable FIFO 2048 Cascadeable FIFO
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Cascadeable FIFO Marketing Part Device Description: Cypress Division: CY7C421 CY7C429 1024 Cascadeable FIFO Cypress Semiconductor Corporation Rev. (7C421) Rev. (7C429) 7C421/7C429
Overall Mask) Level (pre-requisite qualification): Size (stepping): mils mils (7C421) mils mils (7C429)
What markings Die:
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process Polyimide CMOS, Double Poly, Metal /0.8 SiO2 Cypress Semiconductor, Round Rock, Texas Fab2 Generic Process Technology/Design Rule (µ-drawn): Metal Composition: 500A 1200A TiW, 8500A SiAl, 500A None 4,000A 15,000 Oxynitride
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CYPRESS SEMICONDUCTOR
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION (7C421)
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Bangkok, Thailand P2831 mils mils Silver Epoxy Gold 28-pin,300-mil PDIP mils side Sumitomo EME-6300H(R)
HERMETIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Name/Location Assembly (prime) facility: Assembly Line Process Alloy Solder Dipped, 63%Sn, 37%Pb None Silver Glass Ultrasonic Attach Dim: Attach Material: Wire Material/Size: Cypress Bangkok, Thailand /D283C mils mils Silver Glass Aluminum 1.25 28-pin, 300-mil CerDIP (7C421) mils side
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CYPRESS SEMICONDUCTOR
OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain: Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None Assembly >2,000V Process Change: Cross Licensee/Licensor:
Please attach following Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 130°C, 85%RH, 15psig) Temperature Cycles (-65°C 150°C) Temperature Cycles (-40°C 165°C) Data Retention Bake, Plastic (165°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 121°C, 100%RH) Operating Life (temp): Steady State Life (HTSSL, 5.75V, 150°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Latchup Testing Tests (MIL-STD 883, method 3015) Other: Current Density 150°C
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CYPRESS SEMICONDUCTOR
PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: Cascadeable FIFO Cypress Semiconductor Size/ Type Rev. Size Design Rule (stepping) Fabrication Passivation Mold Type Compound Assembly Line Location Volt Rating
Supplier's Part Number Rated Speed (ns)
Process Line CY7C420 -**PC/PI -**DC/DMB -**PC -**VC -**JC -**DC/DMB -**KMB -**LMB -**PC/PI -**DC/DMB -**PC -**VC -**JC -**DC/DMB -**KMB -**LMB -**PC/PI -**DC/DMB 28.6 PDIP 28.6 CDIP 28.3 PDIP 28.3 PLCC 28.3 CDIP CPACK 28.6 PDIP 28.6 CDIP 28.3 PDIP 28.3 PLCC 28.3 CDIP CPACK 28.6 PDIP 28.6 CDIP 0.8µ CMOS CMOS Oxynitride Oxynitride Sumitomo Omedata, Indonesia/CBI, Thailand >2,000V CBI, Thailand Sumitomo Omedata, Indonesia/CBI, Thailand >2,000V Omedata, Indonesia/CBI, Thailand Anam, Korea/Hyundai, Korea CBI, Thailand CBI, Thailand CBI, Thailand Sumitomo Omedata, Indonesia/CBI, Thailand >2,000V CBI, Thailand Sumitomo Omedata, Indonesia/CBI, Thailand >2,000V Omedata, Indonesia/CBI, Thailand Anam, Korea/Hyundai, Korea CBI, Thailand CBI, Thailand CBI, Thailand Sumitomo Omedata, Indonesia/CBI, Thailand >2,000V CBI, Thailand
CY7C421
0.8µ
CY7C424
0.8µ
CMOS CMOS
Oxynitride Oxynitride
CY7C425
0.8µ
CY7C428
0.8µ
CMOS
Oxynitride
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CYPRESS SEMICONDUCTOR
PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: CASCADEABLE FIFO Cypress Semiconductor Rate Speed (ns) Size/ Type Rev. Size Design Rule (stepping) Fabrication Passivation Mold Type Compound Assembly Line Location Volt Rating
Supplier's Part Number
Process Line CY7C429 -**PC -**VC -**JC -**DC/DMB -**KMB -**LMB 28.3 PDIP 28.3 PLCC 28.3 CDIP CPACK 0.8µ CMOS Oxynitride Sumitomo Omedata, Indonesia/CBI, Thailand Omedata, Indonesia/CBI, Thailand Anam, Korea/Hyundai, Korea CBI, Thailand CBI, Thailand CBI, Thailand >2000V
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
CY7C421/CY7C429 28-pin, 300-mil PDIP 28-pin, 300-mil CDIP
DEVICE RELIABILITY SUMMARY
Wafer Fab:
Fab2, Round Rock,TX
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Device 7C421-PC 7C421-DC 7C421-DC 7C429-JI 7C429-PC 7C429-PC 7C429-PI Assy Lot# 53110 56257 56385 80403 66937 69293 68849 2026799 2030928 2030928 2207994 2117246 2123519A 2123489 Hours 0/1346 0/998 0/3461 0/1454 0/385 0/1074 0/659 0/1454 0/385 0/1074 0/659 Hours Cumulative 0/6262
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device 7C421-PC 7C421-DC Assy Lot# 53110 56385 Lot# 2026799 2030928 Hours 0/346 0/3453 Hours 0/3462 0/3444 Cumulative 0/691
Temperature Cycle (Condition -65°C 150°C) Device 7C421-PC 7C421-DC Assy Lot# 53110 56385 Lot# 2026799 2030928 Cycles 0/75 0/76 Cycles 0/75 0/76 1000 Cycles Cumulative 0/151
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CYPRESS SEMICONDUCTOR
Marketing Part: Description:
DEVICE RELIABILITY SUMMARY CY7C421/CY7C429 Wafer Fab: 28-pin, 300-mil PDIP 28-pin, 300-mil CDIP
Fab2, Round Rock,TX
Autoclave (PCT, bias, 121°C, 100%RH, 15psig) Device 7C429-PC Assy Lot# 77650 Lot# 2138068 Hours 0/76 Hours 0/76 Cumulative 0/76
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CYPRESS SEMICONDUCTOR
Device Reliability Summary
CASCADEABLE FIFOs CY7C42* Electrostatic Discharge Human Body Model Circuit 883, Method 3015 >+2,000V Unit >-2,000V >+2,000V Unit >-2,000V >+2,000V Unit >-2,000V (Highest passing voltage, +10% Guard banded)
Latchup Testing Cypress Internal Latch-up Procedure Tests: Current Injection 200mA Trigger Socket Temp 150°C
Other miscellaneous tests Current Density Pass
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CYPRESS SEMICONDUCTOR
CYPRESS PREVIOUS QUALIFICATION DATA
Device: Process
7C42X Cascadeable FIFOs CMOS Technology: CMOS 0.8µm Technology Process Location: Jose,
Cypress Test
Stress/Test
Reference Method Temp/Bias
Actual Conditions
Status SS/Fail 0/1763 0/3053
Qualification Data Reference
Test Result
Hrs/Cyc
Pass QTP# 89113
Fail
HTOL
29-00020
150C/5.75V
HTOL
29-00020
150C/5.75V
0/400 0/400
QTP# 89113
High Temp. Bake/DRET HAST 25-00063 140C/5.5V Cycs Cycs 1000 Cycs 0/55 0/55 0/110 1/108 0/165 0/55 10/161 QTP# 89113
Steam Test/Autoclave/PCT
25-00047
121C,100%RH psig -65C 150C
QTP# 89113
Temperature Cycle
Cond.
QTP# 89113
HTSSL
29-00020
150C, 5.75V
Mechanical Sequence X-Ray ESD-HBM ESD-CDM Latch-up Flammability Oxygen Index Moisture Resistance Internal Water Vapor Solvent Resistance Internal Visual Physical Dimensions Corner Pins Corner Pins Internal Pins Internal Pins QTP# 89113 QTP# 89113 QTP# 89113
Assembly bonding problem Assembly bonding defects, Functional
PAGE
CYPRESS SEMICONDUCTOR
Lead Integrity Bond Strength

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