BFG135 7GHz wideband transistor Product specification File under
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BFG135 7GHz wideband transistor
Product specification File under discrete semiconductors, SC14 1995
Philips Semiconductors
Product specification
7GHz wideband transistor
DESCRIPTION silicon planar epitaxial transistor plastic SOT223 envelope, intended wideband amplifier applications. small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities distortion level. distribution active areas across surface device gives excellent temperature profile. PINNING base emitter collector DESCRIPTION emitter
BFG135
view
MSB002
Fig.1 SOT223. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ptot PARAMETER collector-base voltage collector-emitter voltage collector current total power dissipation current gain transition frequency maximum unilateral power gain (note GHz; Tamb MHz; Tamb MHz; Tamb output voltage open base CONDITIONS open emitter MIN. TYP. MAX. UNIT
Tamb f(p+q-r) 793.25
LIMITING VALUES accordance with Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO Ptot Tstg Note temperature soldering point collector tab. 1995 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature (note open emitter open base open collector CONDITIONS MIN. MAX. UNIT
Philips Semiconductors
Product specification
7GHz wideband transistor
THERMAL CHARACTERISTICS SYMBOL Note temperature soldering point collector tab. CHARACTERISTICS unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain CONDITIONS GHz; Tamb MHz; Tamb MHz; Tamb output voltage second order intermodulation distortion note note dBmV; Tamb f(p+q) MHz; MHz; dBmV; Tamb f(p+q) MHz; MHz; Notes (DIN 45004B); Tamb 445.25 MHz; 453.25 MHz; 455.25 MHz; measured f(p+q-r) 443.25 MHz. (DIN 45004B); Tamb 795.25 MHz; 803.25 MHz; 805.25 MHz; measured f(p+q-r) 793.25 MHz. MIN. TYP. PARAMETER thermal resistance from junction soldering point CONDITIONS (note
BFG135
THERMAL RESISTANCE
MAX.
UNIT
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
input
MBB284
output
Fig.2 Intermodulation distortion second order intermodulation distortion test circuit.
List components (see test circuit) DESIGNATION (note (note (note (note Note Components mounted underside PCB. circuit constructed double copper-clad printed circuit board with PTFE dielectric 2.2); thickness inch; thickness copper sheet inch. DESCRIPTION multilayer ceramic capacitor multilayer ceramic capacitor miniature ceramic plate capacitor microstripline microstripline turns copper wire microstripline Ferroxcube choke copper wire metal film resistor metal film resistor metal film resistor length 2322 73103 2322 73201 2322 73279 VALUE UNIT length width length 22mm; width int. dia. winding pitch length width 3122 20153 DIMENSIONS CATALOGUE 2222 08627 2222 12108 2222 08103
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
input
output
MBB299
andbook, full pagewidth
MBB298
handbook, full pagewidth
MBB297
Fig.3 Intermodulation distortion test printed-circuit board.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MBB300
MBB294
handbook, halfpage
handbook, halfpage
(mA)
Fig.5 Fig.4 Power derating curve.
current gain function collector current.
MBB295
handbook, halfpage
handbook, halfpage
MBB296
(pF)
(GHz)
(mA)
MHz;
GHz; Tamb
Fig.6
Feedback capacitance function collector-base voltage.
Fig.7
Transition frequency function collector current.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MBB292
MBB293
handbook, halfpage
(dB)
handbook, halfpage
(dB)
(mA)
(mA)
Tamb f(p+q-r) 443.25 MHz.
Tamb f(p+q-r) 793.25 MHz.
Fig.8
Intermodulation distortion function collector current.
Fig.9
Intermodulation distortion function collector current.
MBB291
MBB290
handbook, halfpage
(dB)
handbook, halfpage
(dB)
(mA)
(mA)
dBmV; Tamb f(p+q) MHz.
dBmV; Tamb f(p+q) MHz.
Fig.10 Second order intermodulation distortion function collector current.
Fig.11 Second order intermodulation distortion function collector current.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, halfpage
MEA951
handbook, halfpage
MEA952
0.25 0.50 0.75 POUT POUT
MHz.
MHz.
Fig.12 Load impedance function output power.
Fig.13 Load impedance function output power.
handbook, halfpage
MEA953
MEA948
handbook, halfpage
0.25 0.50 0.75
12.5 MHz.
MHz.
Fig.14 Load impedance function output power.
Fig.15 Input impedance function output power.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MEA949
MEA950
handbook, halfpage
handbook, halfpage
POUT
POUT
MHz.
12.5 MHz.
Fig.16 Input impedance function output power.
Fig.17 Input impedance function output power.
MEA947
MEA945
handbook, halfpage
handbook, halfpage
12.5
12.5
POUT
(mW)
MHz.
MHz.
Fig.18 Efficiency function output power.
Fig.19 Output power function input power.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
MEA946
MBB289
handbook, halfpage
handbook, halfpage
(dB)
12.5 (dB)
POUT
(MHz)
Tamb MHz.
Fig.20 Power gain function output power.
Fig.21 Maximum unilateral power gain function frequency.
1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
Tamb
MBB288
Fig.22 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
Tamb
MBB286
Fig.23 Common emitter forward transmission coefficient (S21). 1995
Philips Semiconductors
Product specification
7GHz wideband transistor
BFG135
handbook, full pagewidth
Tamb
MBB285
Fig.24 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
Tamb
MBB287
Fig.25 Common emitter output reflection coefficient (S22). 1995
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