PRODUCT DESCRIPTION (for qualification) Information provided this

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CASCADEABLE FIFO MARKETING PART NUMBER CY7C408A CY7C409A DEVICE DESCRIPTION Cascadeable FIFO Cascadeable FIFO
PRODUCT DESCRIPTION (for qualification)
Information provided this document intended generic qualification technically describes Cypress part supplied: Marketing Part Device Description: Cypress Division: Size (stepping): CY7C408A/CY7C409A FIFOs Cypress Semiconductor Corporation mils mils What markings Die: 7C408/7C409 Jan/1991
Overall Mask) Level (pre-requisite qualification): Cypress Qualification completion/Marketing Availability Dates (Current REV):
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number Metal Layers: Passivation Type Materials: Free Phosphorus contents glass layer(%): Coating(s), used: Gate Oxide Material/Thickness (MOS): Name/Location (prime) Facility: Line ID/Wafer Process CMOS, Double Poly, Single Metal /0.8 SiO2 Cypress Semiconductor, Round Rock, TX(Fab Generic Process Technology/Design Rule (µ-drawn): Metal Composition: Metal 1%SiAl,
4,000A 15,000A Oxynitride None
CYPRESS SEMICONDUCTOR PAGE
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor/ P283 mils mils Silver Epoxy Gold 28-pin, 300-mil Plastic mils side Sumitomo EME-6300H(R)
Cypress Semiconductor, Jose,
PLASTIC PACKAGE/ASSEMBLY DESCRIPTION
Package Outline, Type, Name: Package edge clearance: Mold Compound Name/Manufacturer: Lead Frame material: Lead Finish, composition: Attach Area Plating: Attach Method: Wire Bond Method: Assembly Line Process Name/Location Assembly (prime) facility: Epoxy Thermocompression Copper Solder Dipped, 63%Sn, 37%Pb Silver Attach Dim: Attach Material: Wire Material/Size: Cypress Semiconductor /V283 mils mils Silver Epoxy Gold/ 28-pin, 300-mil mils side Sumitomo EME-6300H(R)
Cypress Semiconductor, Jose,
CYPRESS SEMICONDUCTOR PAGE
OTHER INFORMATION
approval similarity, identify other devices using same basic with bonding metal mask options test selections explain:
Cypress planning changes near future, identify change (Qtr/Yr) Design Rev./Shrink: Fab/Assembly site change: Other Devices qualified this technology: Other Packages qualified this device: Voltage Rating (per STD-008, Method 3018): Flammability Classification (UL-94V): Alternate Fab/Assembly Locations: None Assembly Alphatech, Bangkok, Thailand Omedata, Indonesia LCC,CERDIP >2,000V Process Change: Cross Licensee/Licensor:
Qualification Reliability data revision Package type, assembly sites identified above (mark included): HAST (5.5V, 130°C, 85%RH, 15psig) Temperature Cycles (-40°C 125C) Data Retention Bake, Plastic (165°C) Data Retention Bake, Hermetic (250°C) Autoclave (PCT, 121°C, 100%RH) Tests (MIL-STD 883, method 3015) Operating Life (temp): Latchup Testing Steady State Life (HTSSL, 5.75V, 150°C) Temperature Humidity Bias (5.5V, 85°C, 85%RH) Other: Other: Aged Bond Strength Alpha Particle Sensitivity 150°C
CYPRESS SEMICONDUCTOR PAGE
PRODUCT INFORMATION QUALIFICATION SIMILARITY
Product Family: Division: Cypress Semiconductor Rated Speed Size/ Type Revision Size (stepping) Design Rule Fabrication Passivation Mold Assembly Volt Type Compound Line Rating Location Availability (mm/yy)
Supplier's Part Number
Process Line CY7C408A/ -**PC CY7C409A -**VC -**DC/DMB -**KMB -**LMB 28.3 PDIP 7C408W 28.3 7C409W 28.3CDIP 28RCPACK 28SLCC 0.8µ CMOS Oxynitride Sumitomo Hysol Jose, >2,000V
CYPRESS SEMICONDUCTOR PAGE
DEVICE RELIABILITY SUMMARY
Marketing Part: Description: CY7C408A/CY7C409A 28-pin, 300-mil PDIP Wafer Fab: Assembly: Round Rock, Cypress Jose,
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Early Failure Rate Device 7C408WT-PC 7C408WT-PC 7C408WT-VC 7C408WT-VC 2032987 2032987 2032987 2032987 Assy 54950 54950L 55297T 55297T1 Hours Hours 0/1747 2/17991 0/199 0/297 Hours 0/1744 0/1797 Cumulative 2/4044
0/199 0/299
High Temperature Dynamic Operating Life (HTOL, 5.75V, 150°C) Latent Failure Rate Device 7C408WT-PC Lot# 2032987 Assy Lot# 54950 Hours 0/346 Hours 1/3452 Cumulative 1/346
Temperature Cycle (Condition -40°C 125°C) Device 7C408WT-PC Lot# 2032987 Assy 54950 100Cycles 0/76 Cycles 0/76 Cumulative 0/76
Autoclave (PCT, bias, 121°C, 100%RH, 15psig) Device 7C408WT-PC
Lot# 2032987
Assy 54950
Hours 0/76
Hours 0/76
Cumulative 0/76
1EOS, (FA# 90311-3E1) Non-visual, destroyed before test.
CYPRESS SEMICONDUCTOR PAGE
Device Reliability Summary
Cascadeable FIFO CY7C408A/CY7C409A Electrostatic Discharge Human Body Model Circuit 883, Method 3015 >+2,000V Unit >-2,000V >+2,000V Unit >-2,000V >+2,000V Unit >-2,000V (Highest passing voltage, +10% Guard-banded)
Latchup Testing Cypress Internal Latch-up Procedure Tests: Current Injection 200mA Trigger Socket Oscillation 7.5V 1MHz Temp 150°C

PRODUCT DESCRIPTION (for qualification) Information provided this

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