POWER IGBT POWER IGBT generation high voltage power IGBTs. Using
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APT11GP60BDQB APT11GP60BDQB
POWER IGBT
POWER IGBT generation high voltage power IGBTs. Using Punch Through Technology this IGBT ideal many high frequency, high voltage switching applications been optimized high frequency switchmode power supplies.
TO-247
Conduction Loss Gate Charge Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES SSOA TJ,TSTG Parameter Collector-Emitter Voltage Gate-Emitter Voltage
SSOA rated
Ratings: 25°C unless otherwise specified.
APT11GP60BDQB UNIT Volts
600V
Continuous Collector Current 25°C Continuous Collector Current 100°C Pulsed Collector Current
Amps
150°C
Switching Safe Operating Area 150°C Total Power Dissipation Operating Storage Junction Temperature Range Max. Lead Temp. Soldering: 0.063" from Case Sec.
Watts
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic Test Conditions Collector-Emitter Breakdown Voltage (VGE 250µA) Gate Threshold Voltage (VCE VGE, 1mA, 25°C) UNIT
3-2005 050-7447
Collector-Emitter Voltage (VGE 15V, 11A, 25°C) Collector-Emitter Voltage (VGE 15V, 11A, 125°C) Collector Cut-off Current (VCE VCES, 25°C)
Volts
ICES
Collector Cut-off Current (VCE VCES, 125°C) Gate-Emitter Leakage Current (VGE ±20V)
2500 ±100
CAUTION: These Devices Sensitive Electrostatic Discharge. Proper Handling Procedures Should Followed.
Website http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP SSOA td(on) td(off) Eon1 Eon2 Eoff td(on) td(off) Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT11GP60BDQB
Test Conditions Capacitance Gate Charge 300V 150°C, 15V, 100µH,VCE 600V Inductive Switching (25°C) 400V
UNIT
1210
Gate-Emitter Charge Gate-Collector ("Miller Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
+25°C
Turn-on Switching Energy (Diode)
Inductive Switching (125°C) 400V +125°C
Turn-on Switching Energy (Diode)
THERMAL MECHANICAL CHARACTERISTICS
Symbol Characteristic Junction Case (IGBT) Junction Case (DIODE) Package Weight UNIT °C/W
0.67 5.90
Repetitive Rating: Pulse width limited maximum junction temperature. Combi devices, Ices includes both IGBT FRED leakages MIL-STD-750 Method 3471. Eon1 clamped inductive turn-on-energy IGBT only, without effect commutating diode reverse recovery current adding IGBT turn-on loss. (See Figure 24.) Eon2 clamped inductive turn-on energy that includes commutating diode reverse recovery current IGBT turn-on switching loss. Combi device used clamping diode shown Eon2 test circuit. (See Figures 22.) Eoff clamped inductive turn-off energy measured accordance with JEDEC standard JESD24-1. (See Figures 23.)
Reserves right change, without notice, specifications information contained herein.
050-7447
3-2005
COLLECTOR CURRENT
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
COLLECTOR CURRENT
APT11GP60BDQB
10V. 250µs PULSE TEST <0.5 DUTY CYCLE
TC=125°C VCE, COLLECTER-TO-EMITTER VOLTAGE
250µs PULSE TEST <0.5 DUTY CYCLE
TC=-55°C TC=25°C
TC=-55°C TC=25°C TC=125°C
VCE, COLLECTER-TO-EMITTER VOLTAGE
25°C
FIGURE Output Characteristics(VGE 15V)
COLLECTOR CURRENT VGE, GATE-TO-EMITTER VOLTAGE
FIGURE Output Characteristics (VGE 10V) GATE CHARGE (nC) FIGURE Gate Charge 120V 300V 480V
-55°C 25°C 125°C
VGE, GATE-TO-EMITTER VOLTAGE FIGURE Transfer Characteristics
25°C. 250µs PULSE TEST <0.5 DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE
5.5A
5.5A
VGE, GATE-TO-EMITTER VOLTAGE FIGURE State Voltage Gate-to- Emitter Voltage 1.10
Junction Temperature (°C) FIGURE State Voltage Junction Temperature
15V. 250µs PULSE TEST <0.5 DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
COLLECTOR CURRENT(A)
1.05
1.00
0.95
050-7447
JUNCTION TEMPERATURE (°C) FIGURE Breakdown Voltage Junction Temperature
0.90
CASE TEMPERATURE (°C) FIGURE Collector Current Case Temperature
3-2005
(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
=15V,TJ=125°C
APT11GP60BDQB
VGE=
400V
=15V,TJ=25°C
400V 25°C, =125°C
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Delay Time Collector Current
RISE TIME (ns) FALL TIME (ns)
100µH, 400V
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-Off Delay Time Collector Current
100µH, 400V
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Rise Time Collector Current
400V
125°C,
125°C,VGE
25°C,
ICE, COLLECTOR EMITTER CURRENT FIGURE Current Fall Time Collector Current
EOFF, TURN ENERGY LOSS (µJ)
EON2, TURN ENERGY LOSS (µJ)
=125°C, VGE=15V
125°C,
400V
25°C, VGE=15V
25°C,
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn-On Energy Loss Collector Current
SWITCHING ENERGY LOSSES (µJ)
ICE, COLLECTOR EMITTER CURRENT FIGURE Turn Energy Loss Collector Current
400V +15V
Eoff Eon2
400V +15V 125°C
SWITCHING ENERGY LOSSES (µJ)
Eoff
Eon2 Eoff Eon2 5.5A Eoff 5.5A
Eon2
Eoff Eon2
3-2005
Eon2 5.5A Eoff 5.5A
050-7447
GATE RESISTANCE (OHMS) FIGURE Switching Energy Losses Gate Resistance
JUNCTION TEMPERATURE (°C) FIGURE Switching Energy Losses Junction Temperature
2,000 1,000
CAPACITANCE
Cies
COLLECTOR CURRENT
APT11GP60BDQB
VCE, COLLECTOR EMITTER VOLTAGE Figure Minimim Switching Safe Operating Area
Coes
Cres
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure Capacitance Collector-To-Emitter Voltage 0.70 0.60 0.50 0.40 0.30 0.20 0.10
ZJC, THERMAL IMPEDANCE (°C/W)
Note:
0.05 10-5 10-4
SINGLE PULSE
Peak
Duty Factor t1/t2
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case Pulse Duration
1000
FMAX, OPERATING FREQUENCY (kHz)
MODEL Junction temp (°C) 0.376 Power (watts) 0.295 Case temperature(°C) 0.0545F 0.00350F
125°C 75°C 200V
Fmax min(f max1 max1 Pdiss 0.05 d(off Pdiss Pcond
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
COLLECTOR CURRENT Figure Operating Frequency Collector Current
050-7447
3-2005
APT11GP60BDQB
APT15DF120 APT8DQ60
Gate Voltage 125°C
td(on) Drain Current
D.U.T.
DrainVoltage
Switching Energy
Figure Inductive Switching Test Circuit Figure Turn-on Switching Waveforms Definitions
Gate Voltage
VTEST *DRIVER SAME TYPE D.U.T.
125°C
DrainVoltage td(off)
100uH CLAMP
Switching Energy
Drain Current
DRIVER* D.U.T.
Figure Turn-off Switching Waveforms Definitions
Figure EON1 Test Circuit
050-7447
3-2005
APT11GP60BDQB
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol Characteristic Test Conditions Maximum Average Forward Current 121°C, Duty Cycle 0.5) Forward Current (Square wave, duty) Non-Repetitive Forward Surge Current 45°C, 8.3ms) Characteristic Test Conditions Forward Voltage 11A, 125°C
Ratings: 25°C unless otherwise specified.
APT11GP60BDQB UNIT Amps
UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.20 2.90 1.90
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
19.81 (.780) 20.32 (.800)
2.21 (.087) 2.59 (.102)
5.45 (.215) 2-Plcs.
APT's products covered more U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 foreign patents. Foreign patents pending. Rights Reserved.
050-7447
Dimensions Millimeters (Inches)
3-2005
1.01 (.040) 1.40 (.055)
Gate Collector (Cathode) Emitter (Anode)
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