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APT11GP60BDQB APT11GP60BDQB

POWER MOS 7 IGBT

TYPICAL PERFORMANCE CURVES
APT11GP60BDQB APT11GP60BDQB
POWER MOS 7 IGBT
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
TO-247
· Low Conduction Loss · Low Gate Charge · Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage
· SSOA rated
APT11GP60BDQB UNIT Volts
Watts °C
STATIC ELECTRICAL CHARACTERISTICS
3-2005 050-7447 Rev A
Volts
ICES I GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
APT11GP60BDQB
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
Turn-on Switching Energy (Diode)
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT °C / W gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
APT11GP60BDQB
0 1 2 3 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A) VGE, GATE-TO-EMITTER VOLTAGE (V)
2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
-25 0 25 50 75 100 125 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 60
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
APT11GP60BDQB
10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 16 14 12
tr, RISE TIME (ns) tf, FALL TIME (ns)
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 120 100 80 60 40 20 0
10 8 6 4 2 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 500
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 600
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 600
SWITCHING ENERGY LOSSES (µJ)
5 10 15 20 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 600
Eoff 22A Eon2 22A
SWITCHING ENERGY LOSSES (µJ)
Eoff 22A
Eon2 11A Eoff 11A Eon2 5.5A Eoff 5.5A 0
Eon2 22A 200 100 0
Eoff 11A Eon2 11A
Eon2 5.5A Eoff 5.5A 0
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
C, CAPACITANCE ( F)
50 Cies 45 40
IC, COLLECTOR CURRENT (A)
APT11GP60BDQB
35 30 25 20 15 10 5 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area 0
100 50 Coes
10 5 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 0.3 0.9
ZJC, THERMAL IMPEDANCE (°C / W)
Note:
PDM t1 t2
SINGLE PULSE
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp (°C) 0.376 Power (watts) 0.295 Case temperature(°C) 0.0545F 0.00350F
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
5 10 15 20 25 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
APT11GP60BDQB
APT15DF120 APT8DQ60
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions
VTEST DRIVER SAME TYPE AS D.U.T.
V CE 100uH IC V CLAMP B
Switching Energy
0 Drain Current
A DRIVER D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
TYPICAL PERFORMANCE CURVES
APT11GP60BDQB
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
APT11GP60BDQB UNIT Amps
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.20 2.90 1.90
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Gate Collector (Cathode) Emitter (Anode)