BF747 wideband transistor Product specification File under Discre
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BF747 wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
wideband transistor
FEATURES Stable oscillator operation High current gain Good thermal stability.
handbook, halfpage
BF747
DESCRIPTION cost transistor plastic SOT23 package.
APPLICATIONS intended TV-tuner applications used mixer and/or oscillator. PINNING base emitter collector DESCRIPTION
Marking code: E15.
view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCEO VCBO VEBO Ptot Note temperature soldering point collector pin. LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCEO VCBO VEBO Ptot Tstg Note temperature soldering point collector pin. PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation storage temperature junction temperature note open base open emitter open collector CONDITIONS MIN. MAX. UNIT PARAMETER collector-emitter voltage collector-base voltage emitter-base voltage peak collector current total power dissipation transition frequency note open base open emitter open collector CONDITIONS TYP. MAX. UNIT
+150
September 1995
Philips Semiconductors
Product specification
wideband transistor
THERMAL CHARACTERISTICS SYMBOL Note temperature soldering point collector pin. CHARACTERISTICS unless otherwise specified. SYMBOL ICBO Note maximum unilateral power gain, assuming zero PARAMETER collector cut-off current current gain transition frequency feedback capacitance maximum unilateral power gain; note CONDITIONS MIN. TYP. PARAMETER thermal resistance from junction soldering point CONDITIONS note VALUE
BF747
UNIT
MAX.
UNIT
handbook, halfpage
MBB401
MBB397
handbook, halfpage
Ptot (mW)
(oC)
(mA)
Fig.3 Fig.2 Power derating curve.
current gain function collector current.
September 1995
Philips Semiconductors
Product specification
wideband transistor
BF747
handbook, halfpage
MBB400
handbook, halfpage
MBB399
(pF)
(GHz)
10-1
(mA)
MHz.
MHz.
Fig.4
Feedback capacitance function collector-base voltage.
Fig.5
Transition frequency function collector current.
handbook, halfpage
MBB407
MBB408
handbook, halfpage
(dB)
(dB)
(mA)
(MHz)
MHz.
Fig.6
Maximum unilateral power gain function collector current.
Fig.7
Maximum unilateral power gain function frequency.
September 1995
Philips Semiconductors
Product specification
wideband transistor
BF747
handbook, halfpage
MBB398
handbook, halfpage
MBB409
(dB)
10-1
10-2 10-1
(mA)
10-1
(mA)
IC/IB
MHz.
Fig.8
Collector-emitter saturation voltage function collector current.
Fig.9
Common emitter noise figure function collector current.
handbook, halfpage
MBB410
handbook, halfpage
MBB413
1000 (mS)
(mS)
1000
(mS)
(mS)
Fig.10 Common base input admittance (Y11).
Fig.11 Common base forward admittance (Y21).
September 1995
Philips Semiconductors
Product specification
wideband transistor
BF747
handbook, halfpage
MBB411
(mS)
handbook, halfpage
MBB412
-0.5
(mS) 1000 1000
-1.0
-1.5
-2.0
-2.5 -0.7
-0.5
-0.3
(mS)
-0.1
(mS)
Fig.12 Common base reverse admittance (Y12).
Fig.13 Common base output admittance (Y22).
September 1995
Philips Semiconductors
Product specification
wideband transistor
BF747
handbook, full pagewidth
MBB403
Fig.14 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
120o
150o
180o
150o
120o
MBB405
Fig.15 Common emitter forward transmission coefficient (S21).
September 1995
Philips Semiconductors
Product specification
wideband transistor
BF747
handbook, full pagewidth
120o
150o
180o
150o
120o
MBB406
Fig.16 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
MBB404
Fig.17 Common emitter output reflection coefficient (S22).
September 1995
Philips Semiconductors
Product specification
wideband transistor
Table Common base Y-parameters, typical values. (MHz) 1000 Table REAL (mS) 69.0 60.4 45.0 34.3 27.7 24.0 21.5 20.0 18.6 18.3 17.8 IMAG. (mS) -10.2 -20.6 -27.4 -26.4 -23.3 -20.4 -18.0 -15.6 -14.0 -12.8 -11.7 REAL (mS) -68.0 -58.0 -39.1 -25.4 -17.2 -11.7 -7.8 -5.3 -3.0 -1.3 -0.1 IMAG. (mS) 12.3 25.6 34.5 34.0 31.1 27.6 25.0 22.6 20.2 18.7 17.1 REAL (mS) -0.02 -0.06 -0.10 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 -0.20 IMAG. (mS) -0.1 -0.3 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 REAL (mS) -0.01 -0.08 0.19 0.29 0.37 0.45 0.53 0.60 0.69 0.82 0.95
BF747
IMAG. (mS)
Common base Y-parameters, typical values. IMAG. (mS) -35.7 -62.0 -57.8 -46.9 -38.6 -32.8 -28.4 -25.2 -22.6 -20.7 -19.1 REAL (mS) -130.5 -91.1 -46.0 -26.4 -16.6 -11.0 -6.3 -3.3 -0.6 IMAG. (mS) 38.8 67.9 64.7 53.8 45.8 39.8 35.0 31.4 27.6 25.2 23.0 REAL (mS) -0.06 -0.20 -0.30 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 -0.40 IMAG. (mS) -0.2 -0.5 -0.7 -0.8 -1.0 -1.3 -1.4 -1.6 -1.9 -2.1 -2.3 REAL (mS) -0.06 0.21 0.38 0.47 0.58 0.63 0.71 0.80 0.88 1.01 1.15 IMAG. (mS)
(MHz) 1000
REAL (mS) 132.6 96.3 54.7 37.5 29.2 25.3 22.0 20.3 18.7 17.8 17.3
September 1995
Philips Semiconductors
Product specification
wideband transistor
Table Common base Y-parameters, typical values. (MHZ) 1000 Table REAL (mS) 189.0 108.5 55.2 37.1 28.8 24.7 21.2 19.3 17.2 16.4 15.8 IMAG. (mS) -79.6 -99.0 -76.2 -59.0 -47.6 -40.2 -35.0 -31.0 -27.5 -25.2 -23.0 REAL (mS) -185.5 -101.4 -44.6 -24.3 -14.6 -8.6 -3.4 -0.2 IMAG. (mS) 83.0 105.4 82.8 65.7 54.4 46.7 40.8 36.2 31.1 28.3 25.5 REAL (mS) -0.10 -0.30 -0.50 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 IMAG. (mS) -0.3 -0.5 -0.7 -0.9 -1.0 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) -0.09 0.30 0.44 0.60 0.69 0.75 0.84 0.93 1.00 1.15 1.31
BF747
IMAG. (mS)
Common base Y-parameters, typical values. IMAG. (mS) -113.8 -114.0 -81.1 -62.1 -50.0 -42.3 -36.4 -32.0 -28.2 -25.7 -23.5 REAL (mS) -202.6 -96.4 -41.7 -22.0 -12.5 -6.1 -1.2 IMAG. (mS) 118.1 120.1 87.7 68.6 56.9 48.2 41.6 36.7 31.3 28.1 24.9 REAL (mS) -0.20 -0.40 -0.50 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 -0.60 IMAG. (mS) -0.3 -0.5 -0.7 -0.8 -1.1 -1.3 -1.5 -1.7 -1.9 -2.1 -2.3 REAL (mS) IMAG. (mS)
(MHz) 1000
REAL (mS) 206.5 104.3 53.1 35.9 28.1 23.4 20.1 18.2 16.2 15.5 14.7
September 1995
Philips Semiconductors
Product specification
wideband transistor
PACKAGE OUTLINE
BF747
handbook, full pagewidth
0.150 0.090 0.95 0.48 0.38 VIEW
0.55 0.45
MBC846
Dimensions
Fig.18 SOT23.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale. This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
September 1995
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