NUD3048 simple versatile MicroIntegration device, containing power MOS

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NUD3048 simple versatile MicroIntegration device, containing power MOS

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AND8164/D NUD3048 Simple Inrush Current Limit Circuit
NUD3048 simple versatile MicroIntegration device, containing power MOSFET, Zener gate clamp, gate resistor. MOSFET rated increasing versatility. This combination components applicable wide range applications, both cost space effective. These applications include: Inrush Current Limiter Relay Driver Power Good Signal Reference Drain Digital Inverter/Level Shifter
Drain Gate NUD3048
gate determines turn di/dt load. very long time constants, desirable additional resistance series with internal gate resistor. internal Zener diode clamps gate voltage safe level, that damaged high input voltages.
Drain NUD3048
Gate Gate Cstart Source
Gate
Source
Figure Inrush Limiter Circuit
Figure Basic Circuit Diagram
Parts Selection
Inrush Limiter Circuit
circuit Figure shows simple inrush limiter. This used reduce effects charging large capacitors when power applied from bus. many cases swap circuits used this application, when only feature that required inrush limiting, this solution very cost effective. perfect telecom applications where input voltage reach operate currents When power applied this circuit, gate initially low. input voltage applied gate internal resistor. This resistor creates pass filter conjunction with capacitor Cstart. charging rate
select proper capacitor, first necessary know input voltage range maximum desired di/dt. maximum di/dt will occur highest gate drive voltage, that will normally point chosen. Figure shows di/dt rates amps millisecond range drive voltages capacitances. Using maximum di/dt, find intersection that line with maximum input voltage. Find intersecting vertical line read corresponding capacitance from graph. Since capacitor causes gate charge slowly, there will delay time associated with this circuit. This time required gate reach threshold voltage. Figure shows associated delay times various combinations capacitance drive voltage.
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev.
Publication Order Number: AND8164/D
AND8164/D
Figures through examples gate drive drain current waveforms this application NUD3048. delay times shown measured from start gate drive signal maximum current amplitude. rise times measured from points current waveform. While graphs based empirical data, suggested best results, first order approximation time constant gate threshold voltage yields following equation turn delay time:
tdelay -100 Vdrive
rise time easily calculated effects Miller capacitance.
1.E+03 1.E+02 1.E+01 1.E+00 1.E-01 1.E-02 1.E-03 1.E+02
di/dt (A/ms)
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
CAPACITANCE (pF)
Figure Current di/dt Capacitance Drive Voltage
1.E+06 1.E+05 DELAY (ms) 1.E+04 1.E+03 1.E+02 1.E+01 1.E+00 1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
CAPACITANCE (pF)
Figure Turn Delay Capacitance Drive Voltage
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AND8164/D
Figure Delay Rise Times NUD3048 with Gate Gate Drive
Figure Delay Rise Times NUD3048 with Gate Gate Drive
Figure Delay Rise Times NUS3048 with Gate Drive
Figure Delay Rise Times NUS3048 with Gate Drive
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AND8164/D
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AND8164/D

NUD3048 simple versatile MicroIntegration device, containing power MOS

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