BFG11; BFG11/X power transistor Product specification Supersedes

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BFG11; BFG11/X power transistor Product specification Supersedes

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BFG11; BFG11/X power transistor
Product specification Supersedes data November 1992 File under Discrete Semiconductors, SC14 1995
Philips Semiconductors
Philips Semiconductors
Product specification
power transistor
FEATURES High power gain High efficiency Small size discrete power amplifier operating area Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation hand-held radio equipment GHz. PINNING BFG11 (see Fig.1) collector base emitter emitter
view
BFG11; BFG11/X
DESCRIPTION silicon planar epitaxial transistors encapsulated plastic, 4-pin dual-emitter SOT143 package. MARKING TYPE NUMBER BFG11 BFG11/X CODE
DESCRIPTION
handbook, columns
MSB014
BFG11/X (see Fig.1) collector emitter base emitter Fig.1 SOT143.
QUICK REFERENCE DATA performance Tamb common-emitter test circuit (see Fig.7). MODE OPERATION Pulsed, class-AB, duty cycle (GHz) (mW) (dB)
1995
Philips Semiconductors
Product specification
power transistor
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC(AV) Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature note Fig.2 open base open collector CONDITIONS open emitter
BFG11; BFG11/X
MIN.
MAX. +150
UNIT
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point CONDITIONS note Ptot VALUE UNIT
Note "Limiting values" "Thermal characteristics" temperature soldering point collector pin.
handbook, halfpage
MLC818
(mW)
Fig.2 Power derating curve.
1995
Philips Semiconductors
Product specification
power transistor
CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current current gain collector capacitance feedback capacitance CONDITIONS open emitter; open base; open collector;
BFG11; BFG11/X
MIN.
MAX.
UNIT
handbook, halfpage
MLC848
(pF)
MHz.
Fig.3
Collector capacitance function collector-base voltage; typical values.
1995
Philips Semiconductors
Product specification
power transistor
APPLICATION INFORMATION performance Tamb common-emitter test circuit (see Fig.7). MODE OPERATION Pulsed, class-AB, duty cycle (GHz) (mA) (mW)
BFG11; BFG11/X
(dB) typ.
typ.
Ruggedness class-AB operation BFG11 capable withstanding load mismatch corresponding VSWR through phases, rated output power under pulsed conditions supply voltage duty cycle
MLC849
MLC850
handbook, halfpage
(dB)
handbook, halfpage
(mW)
(mW)
(mW)
Pulsed, class-AB operation. 0.65 GHz; duty cycle Circuit optimized
Pulsed, class-AB operation. 0.65 GHz; duty cycle Circuit optimized
Fig.4
Power gain collector efficiency functions load power; typical values.
Fig.5
Load power function drive power; typical values.
1995
Philips Semiconductors
Product specification
power transistor
SPICE parameters BFG11 crystal SEQUENCE 19(1) 20(1) 21(1) 34(1) 35(1) PARAMETER XCJC VALUE 3.338 97.14 0.988 31.40 51.45 23.53 2.386 13.73 0.989 2.448 100.0 54.10 1.224 1.740 1.000 1.740 59.65 0.124 0.000 1.110 3.000 9.555 0.600 0.315 12.96 400.0 0.866 5.940 0.000 4.274 0.650 0.392 0.150 0.000 0.000
handbook, halfpage
BFG11; BFG11/X
UNIT
SEQUENCE 36(1) 37(1) Note
PARAMETER
VALUE 750.0 0.000 0.742
UNIT
These parameters have been extracted, default values shown.
MBC964
QLB,E(f) QLB,E(f/fc); scaling frequency MHz.
Fig.6 Package equivalent circuit SOT143.
List components (see Fig.6) DESIGNATION 0.12 0.21 0.06 0.95 0.40 VALUE UNIT
1995
Philips Semiconductors
Product specification
power transistor
Test circuit information
BFG11; BFG11/X
handbook, full pagewidth
bias
C11, C12,
input
,,,,
,,,,
output
MLC851
Fig.7 Common-emitter test circuit class-AB operation 1900 MHz.
1995
Philips Semiconductors
Product specification
power transistor
List components used test circuit (see Fig.8) COMPONENT C11, C12,C13 C14, Notes DESCRIPTION multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note electrolytic capacitor stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note micro choke BD228 metal film resistor metal film resistor VALUE
BFG11; BFG11/X
DIMENSIONS
CATALOGUE
2222 34471 length width 0.93 length width 0.93 length width 0.93 length width 0.93 length width 0.93 length 26.4 width 0.93 length width 0.93 length width length 19.3 width 0.93 length 19.7 width
2322 10209 2322 12651
American Technical Ceramics (ATC) capacitor, type 100A other capacitor same quality. striplines 1/32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric
1995
Philips Semiconductors
Product specification
power transistor
BFG11; BFG11/X
handbook, full pagewidth
Base bias
Collector
Base Collector
MLC852
Dimensions components situated side copper-clad PTFE microfibre-glass board, other side etched serves ground plane. Earth connections from component side ground plane made through metallization.
Fig.8 Printed-circuit board component lay-out common-emitter test circuit Fig.7.
1995
Philips Semiconductors
Product specification
power transistor
PACKAGE OUTLINE
BFG11; BFG11/X
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.9 SOT143.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale. This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
1995
Philips Semiconductors
Product specification
power transistor
NOTES
BFG11; BFG11/X
1995
Philips Semiconductors worldwide company
Argentina: IEROD, Juramento 1992 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: Waterloo Road, NORTH RYDE, 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. A-1101 WIEN, P.O. 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 EINDHOVEN, Netherlands, Tel. (31)40 749, Fax. (31)40 Brazil: Rocio floor, Suite CEP: PAULO-SP, Brazil. P.O. 7383 (01064-970). Tel. (011)821-2333, Fax. (011)829-1849 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS: Tel. (800) 234-7381, Fax. (708) 296-8556 Chile: Santa Maria 0760, SANTIAGO, Tel. (02)773 816, Fax. (02)777 6730 Colombia: IPRELENSO LTDA, Carrera 56-17, 77621 BOGOTA, Tel. (571)249 7624/(571)217 4609, Fax. (571)217 4549 Denmark: Prags Boulevard 1919, DK-2300 COPENHAGEN Tel. (032)88 2636, Fax. (031)57 1949 Finland: Sinikalliontie FIN-02630 ESPOO, Tel. (9)0-50261, Fax. (9)0-520971 France: Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. (01)4099 6161, Fax. (01)4099 6427 Germany: P.O. 20043 HAMBURG, Tel. (040)3296-0, Fax. (040)3296 213. Greece: 25th March Street, 17778 TAVROS, Tel. (01)4894 339/4894 911, Fax. (01)4814 Hong Kong: PHILIPS HONG KONG Ltd., 15/F Philips Ind. Bldg., 24-28 Kung St., KWAI CHUNG, N.T., Tel. (852)424 5121, Fax. (852)480 6960/480 6009 India: Philips INDIA Ltd, Shivsagar Estate, Block Annie Besant Worli, Bombay Tel. (022)4938 541, Fax. (022)4938 Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4, P.O. 4252, JAKARTA 12950, Tel. (021)5201 122, Fax. (021)5205 Ireland: Newstead, Clonskeagh, DUBLIN Tel. (01)640 000, Fax. (01)640 Italy: PHILIPS SEMICONDUCTORS S.r.l., Piazza Novembre 20124 MILANO, Tel. (0039)2 6752 2531, Fax. (0039)2 6752 2557 Japan: Philips Bldg 13-37, Kohnan -chome, Minato-ku, TOKYO 108, Tel. (03)3740 5028, Fax. (03)3740 0580 Korea: (Republic Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022 Malaysia: Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. (03)750 5214, Fax. (03)757 4880 Mexico: 5900 Gateway East, Suite 200, PASO, 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 EINDHOVEN, Bldg. Tel. (040)783749, Fax. (040)788399 Zealand: Wagener Place, C.P.O. 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Manglerud 0612, OSLO, Tel. (022)74 8000, Fax. (022)74 8341 Pakistan: Philips Electrical Industries Pakistan Ltd., Exchange Bldg. ST-2/A, Block Scheme Clifton, KARACHI 75600, Tel. (021)587 4641-49, Fax. (021)577035/5874546. Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, Valero Salcedo Village, P.O. 2108 MCC, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474 Portugal: PHILIPS PORTUGUESA, S.A., Loureiro Borges Arquiparque Miraflores, Apartado 300, 2795 LINDA-A-VELHA, Tel. (01)4163160/4163333, Fax. (01)4163174/4163366. Singapore: Lorong Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: S.A. PHILIPS Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. 7430 Johannesburg 2000, Tel. (011)470-5911, Fax. (011)470-5494. Spain: Balmes 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 Sweden: Kottbygatan Akalla. S-164 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 Tel. (01)488 2211, Fax. (01)481 Taiwan: PHILIPS TAIWAN Ltd., 23-30F, Chung Hsiao West Road, Sec. Taipeh, Taiwan ROC, P.O. 22978, TAIPEI 100, Tel. (02)388 7666, Fax. (02)382 4382. Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, Bangkok 10260, THAILAND, Tel. (662)398-0141, Fax. (662)398-3319. Turkey: Talatpasa Cad. 80640 Tel. 212)279 2770, Fax. (0212)282 6707 United Kingdom: Philips Semiconductors LTD., Bath Road, Hayes, MIDDLESEX 5BX, Tel. (0181)730-5000, Fax. (0181)754-8421 United States: East Arques Avenue, SUNNYVALE, 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601
Internet: other countries apply Philips Semiconductors, International Marketing Sales, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD38 Philips Electronics N.V. 1995
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
123055/1500/03/pp12 Document order number: Date release: 1995 9397 00017
Philips Semiconductors

BFG11; BFG11/X power transistor Product specification Supersedes

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