BFG10W/X power transistor Product specification File under Discre
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BFG10W/X power transistor
Product specification File under Discrete Semiconductors, SC14 1995
Philips Semiconductors
Product specification
power transistor
FEATURES High efficiency Small size discrete power amplifier operating areas Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation hand-held radio equipment GHz. DESCRIPTION silicon planar epitaxial transistor encapsulated plastic, 4-pin dual-emitter SOT343 package. PINNING DESCRIPTION collector emitter base emitter
Marking code:
BFG10W/X
fpage
MBK523
view
Fig.1 SOT343. QUICK REFERENCE DATA performance Tamb common-emitter test circuit. MODE OPERATION Pulsed, class-AB, duty cycle: Pulsed, class-AB, duty cycle: (GHz) LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC(AV) Ptot Tstg PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature note CONDITIONS open emitter open base open collector MIN. MAX. +150 UNIT (mW) (dB) 12.5
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point CONDITIONS note Ptot VALUE UNIT
Note Limiting values Thermal characteristics temperature soldering point collector pin.
1995
Philips Semiconductors
Product specification
power transistor
CHARACTERISTICS (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current current gain collector capacitance feedback capacitance CONDITIONS open emitter; open base; open collector; MIN.
BFG10W/X
MAX.
UNIT
handbook, full pagewidth (K/W) 0.75 0.33
MBG431
0.05 0.02 0.01
10-6 10-5 10-4 10-3 10-2 10-1
Fig.2 Transient thermal impedance from junction soldering point function pulse time; typical values.
1995
Philips Semiconductors
Product specification
power transistor
BFG10W/X
handbook, halfpage
MLC819
(pF)
Fig.3
Collector capacitance function collector-base voltage.
1995
Philips Semiconductors
Product specification
power transistor
APPLICATION INFORMATION performance Tamb common-emitter test circuit. MODE OPERATION Pulsed, class-AB, duty cycle: Pulsed, class-AB, duty cycle: (GHz) Ruggedness class-AB operation (mW) (dB)
BFG10W/X
typ.
typ. 12.5
BFG10W/X capable withstanding load mismatch corresponding VSWR through phases under pulsed conditions supply voltage under conditions: MHz; duty cycle supply voltage under conditions: GHz; duty cycle
MLC820
MBG194
handbook, halfpage
(dB)
handbook, halfpage
(dB)
(mW)
(mW)
Pulsed, class-AB operation. GHz; duty cycle Circuit optimized
Pulsed, class-AB operation. MHz; duty cycle Circuit optimized
Fig.4
Power gain efficiency functions load power; typical values.
Fig.5
Power gain efficiency functions load power; typical values.
1995
Philips Semiconductors
Product specification
power transistor
List components (see Fig.6) COMPONENT Notes must 0.65 American Technical Ceramics type 100A capacitor same quality. Resonant 1900 MHz. DESCRIPTION bias transistor, BC548 equivalent capacitor; notes capacitor; note capacitor; note capacitor; note capacitor; note Philips multilayer capacitor Philips capacitor turns enamelled copper wire turns enamelled copper wire choke, Philips metal film resistor metal film resistor metal film resistor VALUE note 1500 length length DIMENSIONS
BFG10W/X
CATALOGUE
2222 14152
4312 36690
handbook, full pagewidth
+Vbias
+VCC
MBG428
RT5880, thickness 0.79
Fig.6 Class-AB test circuit MHz.
1995
Philips Semiconductors
Product specification
power transistor
List components (see Fig.7) COMPONENT Notes must 0.65 American Technical Ceramics type 100A capacitor same quality. Resonant 1900 MHz. DESCRIPTION bias transistor, BC548 equivalent capacitor; notes capacitor; note capacitor; note capacitor; note capacitor; note Philips capacitor choke, Philips metal film resistor metal film resistor VALUE note 1500 DIMENSIONS
BFG10W/X
CATALOGUE
2222 14152 4330 36301
handbook, full pagewidth
+Vbias
+VCC
MBG429
RT5880, thickness 0.79
Fig.7 Class-AB test circuit GHz.
1995
Philips Semiconductors
Product specification
power transistor
PACKAGE OUTLINE
BFG10W/X
handbook, full pagewidth
1.00
1.35 1.15
0.25 0.10
MSB374
Dimensions
Fig.8 SOT343.
1995
Philips Semiconductors
Product specification
power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG10W/X
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995
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