BFG10; BFG10/X power transistor Product specification Supersedes

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BFG10; BFG10/X power transistor Product specification Supersedes

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BFG10; BFG10/X power transistor
Product specification Supersedes data 1995 File under Discrete Semiconductors, SC14 1995
Philips Semiconductors
Product specification
power transistor
FEATURES High power gain High efficiency Small size discrete power amplifier operating area Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation hand-held radio equipment GHz. DESCRIPTION silicon planar epitaxial transistor encapsulated plastic, 4-pin dual-emitter SOT143 package. PINNING DESCRIPTION
BFG10; BFG10/X
BFG10 (see Fig.1) collector base emitter emitter
handbook, columns
view
MSB014
BFG10/X (see Fig.1) MARKING TYPE NUMBER BFG10 BFG10/X CODE collector emitter base emitter
Fig.1 SOT143.
QUICK REFERENCE DATA performance Tamb common-emitter test circuit (see Fig.7). MODE OPERATION Pulsed, class-AB, duty cycle: (GHz) (mW) (dB)
LIMITING VALUES accordance with Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC(AV) Ptot Tstg Note temperature soldering point collector pin. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature Fig.2; note open base open collector CONDITIONS open emitter MIN. +150 MAX. UNIT
1995
Philips Semiconductors
Product specification
power transistor
THERMAL CHARACTERISTICS SYMBOL Note temperature soldering point collector pin. CHARACTERISTICS unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current current gain collector capacitance feedback capacitance CONDITIONS open emitter; open base; open collector; PARAMETER thermal resistance from junction soldering point CONDITIONS note Ptot
BFG10; BFG10/X
VALUE
UNIT
MIN.
MAX.
UNIT
handbook, halfpage
MLC818
(mW)
handbook, halfpage
MLC819
(pF)
MHz.
Fig.3 Fig.2 Power derating curve
Collector capacitance function collector-base voltage; typical values.
1995
Philips Semiconductors
Product specification
power transistor
APPLICATION INFORMATION performance Tamb common-emitter test circuit (see Fig.7). MODE OPERATION Pulsed, class-AB, duty cycle: (GHz) (mA) (mW)
BFG10; BFG10/X
(dB) typ.
typ.
Ruggedness class-AB operation BFG10 capable withstanding load mismatch corresponding VSWR through phases, rated output power under pulsed conditions supply voltage duty cycle
MLC820
MLC821
handbook, halfpage
(dB)
handbook, halfpage
(mW)
(mW)
(mW)
Pulsed, class-AB operation. 0.65 GHz; duty cycle Circuit optimized
Pulsed, class-AB operation. 0.65 GHz; duty cycle Circuit optimized
Fig.4
Power gain efficiency functions load power; typical values.
Fig.5
Load power function drive power; typical values.
1995
Philips Semiconductors
Product specification
power transistor
SPICE parameters BFG10 crystal SEQUENCE 19(1) 20(1) 21(1) 34(1) 35(1) 36(1) 37(1) Note These parameters have been extracted, default values shown. 1995 PARAMETER XCJC VALUE 2.714 102.8 0.998 28.12 6.009 403.2 2.937 31.01 0.999 2.889 0.284 1.487 1.100 3.500 1.000 3.500 0.217 0.196 0.000 1.110 3.000 5.125 0.600 0.367 12.07 99.40 7.220 3.950 0.000 2.327 0.668 0.398 0.160 0.000 0.000 750.0 0.000 0.652
BFG10; BFG10/X
UNIT
handbook, halfpage
MBC964
QLB,E(f) QLB,E(f/fc); scaling frequency MHz.
Fig.6 Package equivalent circuit SOT143.
List components (see Fig.6) DESIGNATION 0.12 0.21 0.06 0.95 0.40 VALUE UNIT
Philips Semiconductors
Product specification
power transistor
Test circuit information
BFG10; BFG10/X
handbook, full pagewidth
bias
C14, C15,
input
,,,,
,,,,
output
MLC822
Fig.7 Common-emitter test circuit class-AB operation GHz.
1995
Philips Semiconductors
Product specification
power transistor
List components used test circuit (see Fig.7) COMPONENT C10, C12, C14, C15, Notes DESCRIPTION multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note multilayer ceramic chip capacitor; note electrolytic capacitor multilayer ceramic chip capacitor; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note stripline; note micro choke BD228 metal film resistor metal film resistor VALUE 0.86
BFG10; BFG10/X
DIMENSIONS
CATALOGUE
2222 34471 length 28.5 width 0.93 length width 0.93 length width 0.93 length width 0.93 length 16.3 width 0.93 length width 0.93 length width length 19.3 width 0.93 length 19.7 width
2322 10209 2322 15301
American Technical Ceramics (ATC) capacitor, type 100A other capacitor same quality. striplines 1/32 inch double copper-clad printed-circuit board with PTFE fibre-glass dielectric
1995
Philips Semiconductors
Product specification
power transistor
BFG10; BFG10/X
handbook, full pagewidth
Base bias
Collector
Base Collector
MLC823
Dimensions components situated side copper-clad PTFE microfibre-glass board, other side etched serves ground plane. Earth connections from component side ground plane made through metallization.
Fig.8 Printed-circuit board component lay-out common-emitter test circuit Fig.7.
1995
Philips Semiconductors
Product specification
power transistor
PACKAGE OUTLINE
BFG10; BFG10/X
handbook, full pagewidth
0.75 0.60
0.150 0.090
0.88
0.48
MBC845
VIEW
Dimensions
Fig.9 SOT143.
1995
Philips Semiconductors
Product specification
power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFG10; BFG10/X
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1995

BFG10; BFG10/X power transistor Product specification Supersedes

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