BFE520 wideband differential transistor Product specification Sup

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BFE520 wideband differential transistor Product specification Sup

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BFE520 wideband differential transistor
Product specification Supersedes data 1995 File under Discrete Semiconductors, SC14 1996
Philips Semiconductors
Product specification
wideband differential transistor
FEATURES Small size High power gain bias current voltage Temperature matched Balanced configuration matched Continues operate APPLICATIONS Single balanced mixers Balanced amplifiers Balanced oscillators. DESCRIPTION Emitter coupled dual silicon transistor surface mount 5-pin SOT353 (S-mini) package. transistor primarily intended applications front balanced mixer, differential amplifier analog digital cellular phones, cordless phones, pagers satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP.
view
handbook, halfpage
BFE520
PINNING SOT353B SYMBOL base emitter base collector collector DESCRIPTION
MAM211
Fig.1 Simplified outline symbol.
MAX.
UNIT
single transistor MSG/Gmax feedback capacitance maximum power gain noise figure MHz; GHz; current gain thermal resistance from junction soldering point single loaded double loaded 0.35
1996
Philips Semiconductors
Product specification
wideband differential transistor
LIMITING VALUES accordance with Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. note
BFE520
MAX.
UNIT
single transistor VCBO VCEO VEBO Ptot Tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature open emitter open base open collector +175
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point; note single loaded double loaded CONDITIONS VALUE UNIT
Note Limiting values Thermal characteristics temperature soldering point collector pin.
1996
Philips Semiconductors
Product specification
wideband differential transistor
CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS VCE1 VCE2 Tamb MIN. TYP.
BFE520
MAX.
UNIT
characteristics single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO VBEO collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current current gain collector-emitter breakdown voltage
characteristics dual transistor ratio highest lowest current gain difference between highest lowest base-emitter voltage (offset voltage)
characteristics single transistor MSG/Gmax transition frequency collector capacitance feedback capacitance maximum power gain; note MHz; Tamb GHz; Tamb
0.35
0.45
insertion power gain noise figure
MHz; Tamb MHz; GHz;
Note Maximum gain differential amplifier higher because internal emitter connection (see Fig.2).
1996
Philips Semiconductors
Product specification
wideband differential transistor
APPLICATION INFORMATION SPICE parameters single BFE520
handbook, halfpage
BFE520
SEQUENCE 19(1) 20(1) 21(1) 35(1) 36(1) 37(1) Note
PARAMETER XCJC
VALUE 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780
UNIT
MBG190
Fig.2
Package equivalent circuit SOT353B (inductance only).
Lead inductances (nH)
MBG191
Fig.3
Package capacitance (fF) between indicated nodes.
These parameters have been extracted, default values shown. 1996
Philips Semiconductors
Product specification
wideband differential transistor
Typical application circuit
BFE520
handbook, full pagewidth
+VCC
MBG192
Fig.4 Single balanced switching mixer amplifier, featuring high LORF isolation linearity.
1996
Philips Semiconductors
Product specification
wideband differential transistor
PACKAGE OUTLINE
BFE520
handbook, full pagewidth
1.35 1.15 0.17 0.10
0.65
0.25 0.15 (5x)
0.65
MSA365
Dimensions
Fig.5 SOT353.
1996
Philips Semiconductors
Product specification
wideband differential transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFE520
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications. data this specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996

BFE520 wideband differential transistor Product specification Sup

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