BFC520 wideband cascode transistor Product specification Supersed
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BFC520 wideband cascode transistor
Product specification Supersedes data 1996 File under Discrete Semiconductors, SC14 1997
Philips Semiconductors
Product specification
wideband cascode transistor
FEATURES Small size High power gain bias current high frequencies High reverse isolation noise figure Gold metallization ensures excellent reliability Minimum operating voltage VC2-E1 APPLICATIONS noise, high gain amplifiers Oscillator buffer amplifiers Wideband voltage-to-current converters.
BFC520
PINNING SOT353 SYMBOL c1/e2 base emitter base collector 1/emitter collector DESCRIPTION
handbook, halfpage
c1/e2
DESCRIPTION Cascode amplifier with discrete dies surface mount, 5-pin SOT353 (S-mini) package. amplifier primarily intended power communications equipment, such pagers cordless phones very feedback capacitance resulting high isolation.
view
MAM212
Fig.1 Simplified outline symbol.
QUICK REFERENCE DATA VC2-E1 connected ground (0603) capacitor, connected directly ground. SYMBOL
PARAMETER feedback capacitance CB1-C2 maximum isolation maximum stable power gain (narrowband) noise figure thermal resistance from junction soldering point
CONDITIONS MHz; Tamb GHz; Tamb MHz; Tamb GHz; Tamb MHz; single loaded double loaded
MIN.
TYP.
MAX.
UNIT
1997
Philips Semiconductors
Product specification
wideband cascode transistor
LIMITING VALUES accordance with Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. note
BFC520
MAX.
UNIT
single transistor VCBO VCEO VEBO Ptot Tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature open emitter open base open collector +175
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point; note single loaded double loaded CONDITIONS VALUE UNIT
Note Limiting values Thermal characteristics temperature soldering point collector pin.
1997
Philips Semiconductors
Product specification
wideband cascode transistor
CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS VC2-E1 VC2-B2 VC2-E1 VC2-E1 MIN. TYP.
BFC520
MAX.
UNIT
characteristics single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO Cre2 collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage current current gain collector-emitter breakdown voltage
characteristics cascode configuration transition frequency collector capacitance feedback capacitance feedback capacitance 0.55
maximum stable power gain; note VC2-E1 MHz; Tamb VC2-E1 GHz; Tamb
insertion power gain
VC2-E1 MHz; Tamb VC2-E1 GHz; Tamb
Notes
maximum isolation; note noise figure third order intercept point (input)
VC2-E1 MHz; note
Maximum isolation defined isolation when amplifier reduced unity (buffer application). opt; Tamb MHz; MHz; measured f(2p-q) MHz.
1997
Philips Semiconductors
Product specification
wideband cascode transistor
BFC520
handbook, halfpage
MBG228
handbook, halfpage
MBG219
VC2-E1
Ptot (mW) double loaded
(GHz)
single loaded
(oC)
(mA)
GHz; Tamb
Fig.2
Power derating function soldering point temperature; typical values.
Fig.3
Transition frequency function collector current; typical values.
handbook, halfpage
MGG219
handbook, halfpage
MGG220
(dB)
(dB)
10-1
(GHz) (mA)
VC2-E1
VC2-E1
Fig.4
Minimum noise figure function frequency; typical values.
Fig.5
Minimum noise figure function collector current; typical values.
1997
Philips Semiconductors
Product specification
wideband cascode transistor
BFC520
handbook, halfpage
MGG221
S21/S12 (dB)
handbook, halfpage
MGG222
S21/S12 (dB)
(dB)
(dB)
10-2
10-1
(GHz)
10-1
(mA)
VC2-E1
VC2-E1
Fig.6
Maximum stable gain function frequency; typical values.
Fig.7
Maximum stable gain isolation functions collector current; typical values.
handbook, halfpage
MGG223
handbook, halfpage
MGG224
(dB)
(dBm)
output
input
10-1
(mA)
10-1
(mA)
VC2-E1 opt; MHz.
Point tuned maximum gain with double slug tuners. VC2-E1 MHz.
Fig.8
Insertion gain function collector current; typical values.
Fig.9
Third order intercept point function collector current; typical values.
1997
Philips Semiconductors
Product specification
wideband cascode transistor
APPLICATION INFORMATION SPICE parameters single BFC520 SEQUENCE 19(1) 20(1) 21(1) 35(1) 36(1) 37(1) Note These parameters have been extracted, default values shown. 1997 PARAMETER XCJC VALUE 1.016 220.1 1.000 48.06 510.0 283.0 2.035 100.7 0.988 1.692 2.352 24.48 1.022 10.00 1.000 10.00 775.3 2.210 0.000 1.110 3.000 1.245 600.0 0.258 8.616 6.788 1.414 110.3 45.01 447.6 189.2 0.071 0.130 543.7 0.000 750.0 0.000 0.780 UNIT
handbook, halfpage
BFC520
C1/E2
MBG216
Fig.10 Package equivalent circuit SOT353A (inductance only).
Lead mutual inductances (nH)
LB1,2 LE1,2
M(LB1,LE1) M(LB1,LE2)
+0.4 +0.25
C1/E2
MBG217
Fig.11 Package capacitance (fF) between indicated nodes.
Philips Semiconductors
Product specification
wideband cascode transistor
Typical application circuits
BFC520
andbook, full pagewidth
+VCC
output
input
MBG226
increases stability
Fig.12 Narrowband amplifier.
handbook, full pagewidth
+VCC
output
Vtune
MBG227
forms colpitts oscillator. acts buffer amplifier.
Fig.13 VCO/buffer combination.
1997
Philips Semiconductors
Product specification
wideband cascode transistor
PACKAGE OUTLINE Plastic surface mounted package; leads
BFC520
SOT353
detail
scale
DIMENSIONS original dimensions) UNIT 0.30 0.20 0.25 0.10 1.35 1.15 0.65 0.45 0.15 0.25 0.15
OUTLINE VERSION SOT353
REFERENCES JEDEC EIAJ SC-88A
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1997
Philips Semiconductors
Product specification
wideband cascode transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFC520
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications. data this specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1997
Philips Semiconductors
Product specification
wideband cascode transistor
NOTES
BFC520
1997
Philips Semiconductors worldwide company
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other countries apply Philips Semiconductors, Marketing Sales Communications, Building BE-p, P.O. 218, 5600 EINDHOVEN, Netherlands, Fax. 24825 Philips Electronics N.V. 1997
Internet:
SCA55
rights reserved. Reproduction whole part prohibited without prior written consent copyright owner. information presented this document does form part quotation contract, believed accurate reliable changed without notice. liability will accepted publisher consequence use. Publication thereof does convey imply license under patent- other industrial intellectual property rights.
Printed Netherlands
127127/00/03/pp12
Date release: 1997
Document order number:
9397 02888
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