BFC505 wideband cascode transistor Product specification Supersed

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BFC505 wideband cascode transistor Product specification Supersed

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BFC505 wideband cascode transistor
Product specification Supersedes data 1995 File under Discrete Semiconductors, SC14 1996
Philips Semiconductors
Product specification
wideband cascode transistor
FEATURES Small size High power gain bias current high frequencies High reverse isolation noise figure Gold metallization ensures excellent reliability Minimum operating voltage VC2-E1 APPLICATIONS voltage, current, noise high gain amplifiers Oscillator buffer amplifiers Wideband voltage-to-current converters.
handbook, halfpage
BFC505
PINNING SOT353 SYMBOL c1/e2 base emitter base collector 1/emitter collector DESCRIPTION
c1/e2
DESCRIPTION Cascode amplifier with discrete dies surface mount, 5-pin SOT353 (S-mini) package. amplifier primarily intended power communications equipment, such pagers very feedback capacitance resulting high isolation.
view
MAM212
Fig.1 Simplified outline symbol.
QUICK REFERENCE DATA connected ground (0603) capacitor, connected directly ground. SYMBOL
PARAMETER feedback capacitance CB1-C2 maximum isolation maximum stable power gain noise figure
CONDITIONS VC2-E1 MHz; Tamb VC2-E1 MHz; VC2-E1 MHz;
MIN.
TYP.
MAX.
UNIT
thermal resistance from junction soldering point
single loaded double loaded
1996
Philips Semiconductors
Product specification
wideband cascode transistor
LIMITING VALUES accordance with Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. note
BFC505
MAX.
UNIT
single transistor VCBO VCEO VEBO Ptot Tstg collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature junction temperature open emitter open base open collector +175
THERMAL CHARACTERISTICS SYMBOL PARAMETER thermal resistance from junction soldering point; note single loaded double loaded CONDITIONS VALUE UNIT
Note Limiting values Thermal characteristics temperature soldering point collector pin.
1996
Philips Semiconductors
Product specification
wideband cascode transistor
CHARACTERISTICS unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP.
BFC505
MAX.
UNIT
characteristics single transistor V(BR)CBO V(BR)CEO V(BR)EBO ICBO Cre2 collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current current gain VC2-E1 VC2-B2 VC2-E1 VC2-E1 0.25 VC2-E1 MHz; Tamb VC2-E1 MHz; Tamb VC2-E1 GHz; Tamb
characteristics cascode configuration measured test circuit (note transition frequency collector capacitance feedback capacitance feedback capacitance maximum stable power gain; note
insertion power gain
VC2-E1 MHz; Tamb VC2-E1 MHz; Tamb VC2-E1 GHz; Tamb
maximum isolation; note
VC2-E1 VC2-E1 VC2-E1
noise figure
VC2-E1 MHz; VC2-E1 MHz; VC2-E1 GHz;
third order intercept point (input)
note
1996
Philips Semiconductors
Product specification
wideband cascode transistor
Notes VC2-E1/2
BFC505
Maximum isolation defined isolation when amplifier reduced unity (buffer application). opt; Tamb MHz; MHz; measured f(2p-q) MHz.
handbook, halfpage
MBG208
MBG209
handbook, halfpage
Ptot (mW)
double loaded
(GHz)
VC2-E1
single loaded
10-1
(mA)
GHz; Tamb
Fig.2
Power derating function soldering point temperature; typical values.
Fig.3
Transition frequency function collector current; typical values.
1996
Philips Semiconductors
Product specification
wideband cascode transistor
BFC505
handbook, halfpage
MGG213
handbook, halfpage
MGG214
(dB)
0.25
(dB)
10-1
(GHz)
10-1
(mA)
VC2-E1
VC2-E1
Fig.4
Minimum noise figure function frequency; typical values.
Fig.5
Minimum noise figure function collector current; typical values.
handbook, halfpage
MGG215
S21/S12 (dB)
handbook, halfpage
MGG216
S21/S12
(dB)
(dB)
(dB)
(MHz)
10-1
(mA)
VC2-E1 VC2-E1 VC2-E1
VC2-E1 MHz. VC2-E1 MHz. VC2-E1 GHz.
Fig.6
Maximum stable gain isolation functions frequency; typical values.
Fig.7
Maximum stable gain isolation functions collector current; typical values.
1996
Philips Semiconductors
Product specification
wideband cascode transistor
BFC505
handbook, halfpage
MGG217
gain (dB)
handbook, halfpage
MGG218
(dBm)
10-1
(mA)
10-1
(mA)
opt; MHz.
Point tuned maximum gain with double slug tuners; MHz. (output); VC2-E1 (output); VC2-E1 (input); VC2-E1 (input); VC2-E1
Fig.8
Transducer gain function collector current; typical values.
Fig.9
Third order intercept point function collector current; typical values.
1996
Philips Semiconductors
Product specification
wideband cascode transistor
APPLICATION INFORMATION SPICE parameters single BFC505 SEQUENCE 19(1) 20(1) 21(1) 35(1) 36(1) 37(1) Note These parameters have been extracted, default values shown. 1996 PARAMETER XCJC VALUE 134.1 180.0 0.988 38.34 150.0 27.81 2.051 55.19 0.982 2.459 2.920 17.45 1.062 20.00 1.000 20.00 1.171 4.350 0.000 1.110 3.000 284.7 600.0 0.303 7.037 12.34 1.701 30.64 0.000 242.4 188.6 0.041 0.130 1.332 0.000 750.0 0.000 0.897 UNIT
handbook, halfpage
BFC505
C1/E2
MBG216
Fig.10 Package equivalent circuit SOT353A (inductance only).
Lead mutual inductances (nH)
LB1,2 LE1,2
M(LB1,LE1) M(LB1,LE2)
+0.4 +0.25
C1/E2
MBG217
Fig.11 Package capacitance (fF) between indicated nodes.
Philips Semiconductors
Product specification
wideband cascode transistor
Typical application circuits
BFC505
handbook, full pagewidth
Lout
output
input Cpar
MBG218
increases stability.
Fig.12 Narrowband amplifier.
handbook, full pagewidth
+VCC
output
Vtune
MBG227
forms colpitts oscillator. acts buffer amplifier.
Fig.13 VCO/buffer combination.
1996
Philips Semiconductors
Product specification
wideband cascode transistor
PACKAGE OUTLINE
BFC505
handbook, full pagewidth
1.35 1.15 0.17 0.10
0.65
0.25 0.15 (5x)
0.65
MSA365
Dimensions
Fig.14 SOT353.
1996
Philips Semiconductors
Product specification
wideband cascode transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFC505
This data sheet contains target goal specifications product development. This data sheet contains preliminary data; supplementary data published later. This data sheet contains final product specifications. data this specification extracted from full data sheet with same type number title. detailed information relevant data sheet data handbook.
Limiting values given accordance with Absolute Maximum Rating System (IEC 134). Stress above more limiting values cause permanent damage device. These stress ratings only operation device these other conditions above those given Characteristics sections specification implied. Exposure limiting values extended periods affect device reliability. Application information Where application information given, advisory does form part specification. LIFE SUPPORT APPLICATIONS These products designed life support appliances, devices, systems where malfunction these products reasonably expected result personal injury. Philips customers using selling these products such applications their risk agree fully indemnify Philips damages resulting from such improper sale.
1996

BFC505 wideband cascode transistor Product specification Supersed

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