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Application Note 9021 Novel IGBT Inverter Module Low-Power Drive Applications
Kim, Jang, Choo, Lee, Suh,
Abstract This paper presents novel 3-phase IGBT module called (Smart Power Module). This design developed provide very compact, cost, high performance reliable motor drive system. Several distinct design concepts were used achieve highly integrated functionality cost-effective small package. overall description given actual application issues such electrical characteristics, circuit configurations, thermal performance power ratings discussed.
Introduction
terms "energy-saving" "quiet-running" becoming very important world variable speed motor drives. Inverter technology being increasingly accepted used wide range users design their products. low-power motor control, there increasing demands compactness, built-in control, lower overall-cost. important consideration, justifying inverters these applications, optimize total-cost-performance ratio drive system. order meet these needs, have designed developed series compact, highly functional very efficient power semiconductor devices called "SPM (Smart Power Module)". Fig. 1-(a) shows real photograph SPM. SPM-inverters very viable alternative conventional ones low-power motor drives their attractive characteristics, specifically appliances such washing machines, air-conditioners etc. This paper describes detail design issues, electrical performance, other important considerations designing system.
IN(UH) VB(U) Vs(u)
hift
IN(VH) VB(V) Vs(v)
hift
IN(WH) VB(W) Vs(w)
ircu hift
ircu
Thermistor
ircu tion tion
IN(UL,VL,WL)
CFOD
Photograph
Internal function block diagram
Fig. Photograph internal function block diagram
Rev. 2002
Description Design Function Features
Features
combines optimized circuit protection drive that matched IGBT's switching characteristics. composed three normal IGBTs, three sense IGBTs, three HVICs, LVIC thermistor shown Fig. 1-(b). Highly effective short-circuit current detection/protection achieved through advanced current sensing IGBTs that allow continuous monitoring IGBT current. System reliability further enhanced built-in over-temperature integrated under-voltage lockout protection. high speed built-in HVIC provides opto-coupler-less IGBT gate driving capability that further reduces overall size inverter system design. HVIC facilitates single-supply drive topology. This allows driven only drive supply voltage without negative bias. three divided negative terminals monitor inverter output current using three shunt resistors. Nowadays, sensorless controlled inverter systems widely used because advantages drive cost, reliability signal noise immunity. incorporates these terminals order provide low-cost sensorless control solution [3].
B.Protective functions
provides main protective functions. control supply under-voltage protection other short-circuit current protection. principles operation these protective functions described timing diagram Fig. When control supply voltage drops under detect level, internal gating signal blocked fault-out signal generated. Once supply voltage rises again over reset level, fault-out signal becomes high operated command signals. LVIC detects low-side collector current level monitoring sensing voltage. case short-circuit, shuts down internal gating signal generates fault-out signal. This current sensing method provides simplified cost-effective solution. sense-IGBT very linear sensing characteristics range approximately above rated current shown Fig. Fig. shows real sensing voltage waveform. sensing resistor, Rsc, selected determine trip current level which optimized according field requirements. Refer overall application circuit Fig. which shows parameters related short-circuit protection function. Fig. show relationship between sensing resistor desired trip current when shunt resistor zero.
Rating Current
DUT: FSAM15SH60 where, ISC: Circuit trip current RSC: Sensing resistance Rating current
Rev. 2002
Input Signal Input Signal Internal IGBT Gate-Emitter Voltage Control Supply Voltage
Detection
Internal IGBT Gate-Emitter Voltage
detect
reset Output Current
Reference Voltage (0.5V) Filter Delay
Output Current Fault Output Signal Sensing Voltage Fault Output Signal
Unter-voltage protection
Short-circuit protection
Fig. Time chart under-voltage short-circuit protection
Trip Current
Sensing Resistor
Fig. relationship between short-circuit trip current (ISC) sensing resistor (RSC)
rating current
Fig. Sensing characteristics sense-IGBT
[10µs/Div]
(1)Ic (2)Vsc
Fig. Measured voltage sensing resistor, Rsc. Where, Collector current (5A/div.) voltage (0.2/div.)
Rev. 2002
circuit trip current, level inverse proportion value shown (1). that trip current level corresponding 150% rated current. level also decreases along with increasing shunt resistor case both used, relationship shown Fig. Fig. shows actual waveforms under short-circuit protecting situation with Rs=0. voltage increases low-side IGBTs collector current increases. Once voltage Fig. reaches 0.5V, LVIC shuts down gating signal after time delay about 4.5µs, which mainly caused lowpass filter composed shown Fig. Note that wanted detect 150% load current, with which around 24A, while using rated SPM.
Fig. Short-circuit trip current (ISC) related sensing resistance (RSC) shunt resistance (RS)
4.5µs [1µs /Div]
(1)Rsc
0.5V
(3)Ic (2)VCE
Fig.7 Waveforms short-circuit protection. Where voltage (1V/div.) (100V/div.) Collector current (20A/div.)
Boot-Strap Circuit
level-shift feature integrated within HVIC provides advantage opto-couplerless control interface high-side IGBTs drive. Hence, possible operate IGBTs within using only drive supply without negative bias. achieve this, some passive components such capacitors, diodes resistors should used externally. principle operation bootstrap circuit described Fig. voltage source bootstrap capacitor supply. capacitance determined following constraints gate charge required enhance IGBT IQBS Quiescent current HVIC Currents within level shifter HVIC Bootstrap capacitor leakage current
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Factor only relevant bootstrap capacitor electrolytic capacitor. ignored other types capacitors used. Hence, always better non-electrolytic capacitor possible. following equation describes minimum charge, that needs supplied bootstrap capacitor.
leak
where,
Gate charge high-side IGBT Switching frequency ICBS(leak) Bootstrap capacitor leakage current IQBS(max) Maximum quiescent current HVIC Level shift charge required cycle
Vin(L)
Vin(L)
Fig. bootstrap circuit operation time chart
bootstrap capacitor must able supply this charge (QBS), retain full voltage. Otherwise, there will significant amount ripple voltage, which could fall below VBSUV (under-voltage detection level). Hence, recommended that charge capacitor least twice above value. nature bootstrap circuit operation, value capacitor lead overcharging, which could turn damage HVIC. Hence, minimize risk overcharging further reduce ripple voltage, recommended that value multiplied factor minimum bootstrap capacitor value obtained from (3). Note that following should used specific system application, with extended period application standstill mode output, during changing rotor direction. occur washing machine drive applications where voltage lowered under-voltage protection level.
leak
where, allowable discharge voltage CBS.
where, period standstill mode IGBTs turn-off state. capacitor only charges when high-side device voltage pulled down ground. Therefore, on-time low-side IGBT must sufficient ensure that charge drawn from capacitor fully replenished. Hence, inherently there minimum on-time low-side IGBT off-time high-side IGBT).
Rev. 2002
III. Structure Packaging
narrow space multi-die attach technology used SPM. This results reduced noise, size less mutual interference. package designed guarantee best heat transfer from power chips outer heat-sink using Ceramic-Pad attaching technology. ceramic-attached lead frame that includes power chips transfer molded with good insulation high conductivity materials. This allows cost, high thermal performance. lead frame structure down-set shape. This makes thermal resistance doesn't reduce distance between lead frame outer heat-sink. More down-set thickness affects reliability assembly process. optimization bending depth been obtained doing simulations experimental tests. total thickness molding 7.2mm ceramic thickness 2mm. Fig. shows cross sectional structure SPM.
IGBT
Ceramic
Lead Frame
Fig. Cross sectional structure (unit:
Rev. 2002
Electrical Characteristics Performance
Electrical Characteristics
Table shows basic electrical characteristics FSAM15SH60. table also includes switching loss data 125°C condition. This will utilized calculating power loss. Fig. switching waveforms high-side, low-side IGBTs under conditions shown Table
Table Electrical characteristics
Item Collector-emitter Saturation Voltage FWDi Forward Voltage Switching Times tC(ON) tOFF tC(OFF) Turn-on switching loss Turn-off switching loss Collector-emitter Leakage Current ESW(ON) ESW(OFF) ICES Symbol VCE(sat) Condition 15A, 25°C 15A, 125°C 15A, 25°C 15A, 125°C 300V, 15A, 25°C Inductive Load (High/Low-side) Same Switching Times except 125°C VCES, 25°C Min. Typ. Max. 0.34 0.15 0.58 0.25 0.37 0.34 Unit mj/pulse mj/pulse
High-side on/off switching waveform (100ns/div.)
Low-side on/off switching waveform (100ns/div.) Fig. High/Low side IGBT switching waveforms 25°C Where, (5A/div.) (100V/div.) Switching power loss(4kW/div.) Switching energy (0.5mjoule/div.)
Rev. 2002
Application Circuit Design
circuit configuration typical application shown Fig. single-supply drives low-side IGBTs directly charges bootstrap circuitry HVICs. LVIC blocks command signals from controller generates fault signal when failure mode, current failure supply under-voltage failure, detected. output open-collector type. This signal line should pulled positive side power supply with approximately 4.7k. short-circuit protection circuit, selection RFCSC time constant range 3~4us recommended. should least times larger than RSC. integrated CMOS/TTL compatible Schmitt trigger input conditioning circuit enables direct interface with microprocessor. high-side input pulled with 1.5M resistor low-side input pulled with 100k resistor shown Fig. When driver part gate signal composed open-collector, appropriate pull-up resistor selected. When driver part composed with pushpull buffer, low-side pull-up resistor recommended under when +15V. order increase noise immunity, pull-down capacitor used. capacitances recommended 1.2nF high-side 0.47nF low-side.
line
(22) (21) CC(W (32)
(31)
(20) (23)
(18) B(V) (17) CC(W
(30)
(16)
CBSC
(15) (19) S(V)
(13) B(U) (12) CC(UH)
(29)
(10) (11) (UH) (14) S(U)
(28)
(VL)
(26) (25) THERM ISTOR (24)
(27)
CC(L)
CSP15
CSPC15
CSPC05
Resistors related with short-circuit protection
onitoring -Phase urrent V-Phase urrent -Phase urrent
Fig. Typical application circuit example
Rev. 2002
icroprocessor
side 1.5M side
Fig. Example pulling-up direct connection microprocessor
C.Thermal Performance Operation Ratings
power carrying potential device dependent heat transfer capability device. provides only good thermal performance also operating frequency options accordance with application. Thermal resistance heat-sink attached device, major thermal path between thermal network path. junction-to-case thermal resistance measurement heat flow between chip junction surface package. represented following equation. where, P(W): Power dissipation device Tj(°C): Junction temperature Tc(°C): Case reference temperature
Since measured directly, only unknown constant junction temperature Electrical Test Method (ETM) widely used measure junction temperature. test method using relationship between junction temperature Temperature Sensitive Parameter (TSP). Usually, thermal characteristics these parameters intrinsic electro-thermal property semiconductor junctions. example, forward-biased voltage drop diode saturation voltage IGBT such parameters. Once relationship between obtained, thermal resistance (Rjc) measured. heating current TSP-measurement current alternately applied device. time chart duration shown Fig. sampling time must very short allow appreciable cooling junction prior reapplying heating power. obtained this process using known relationship between junction temperature TSP. Once reaches thermal equilibrium, value along with reference temperature applied power recorded. Using measured values (5), junction-to-case thermal resistance estimated. After obtaining Rjc, used various thermal analyses. example, predict junction temperature field condition using following equation
estimated
Rev. 2002
also used calculating device power loss selection heat-sink. From measurement result, typical value thermal resistance FSAM15SH60 2.0°C/W
eating interval eating power
easurm interval
Fig. Thermal resistance test timing chart
power losses ratings total power loss composed conduction switching losses caused IGBTs FRDs. loss during turn-off steady-state ignored because very small amount little effect increasing temperature device. conduction loss depends electrical characteristics device i.e. saturation voltage. Therefore, function conduction current device's junction temperature. other hand, switching loss determined dynamic characteristics like turn-on/off time over-voltage/current. Hence, order obtain accurate switching loss, should consider DC-link voltage system, applied switching frequency power circuit layout addition current temperature. detailed equations calculating both conduction switching losses based PWM-inverter system motor control applications, refer references [5]. typical forward characteristics IGBT diode measured curve tracer equipment. Assuming that switching frequency high, output current inverter considered sinusoidal one. That
peak
where phase-angle difference between voltage current. Using (7), conduction loss IGBT diode obtained. switching energy loss Eoff measured switching waveform device. switching loss depends IGBT diode dynamic characteristics. turn-off loss depends speed gate drive IGBTs current tail recombination minority carries. turn-off energy measured indirectly multiplying current voltage integrating them over time. turn-on loss rate current change stored charge free wheel diode. loss measured using same method. calculation switching loss, linear dependency switching energy loss switched current assumed from measurement result. total inverter conduction losses times Pcon IGBT diode conduction losses. Fig. 14-(a) shows calculated results including total power loss conduction switching IGBTs FRDs. results obtained using high speed device such FSAM15SH60. should noted that modulation index cosf=0.8 used common parameters calculations. Figs. 14(a) 15-(a) show power losses caused SPMs rating current depending motor current variation. Fig. shows power losses acceptable maximum heatsink temperature restrict device's junction temperature below 125°C 300V DC-link voltage. Fig. shows DC-link voltage 400V. that difference about power rating between 15kHz 3kHz operating conditions. Fig. shows thermal impedance, which thermal resistance between junction ambient air. heat-sink used shown Fig.
Rev. 2002
When DC-link voltage 300V Irms IGBT's power loss FRD's power loss 4.8W 1.2W respectively. When thermal impedance saturated, difference temperature junction ambient
IGBT TH_IGBT IGBT 96°C TH_FRD 88.8°C
junction temperature
J_IGBT IGBT 136°C J_FRD 88.8 128.8°C
junction temperatures over 125°C. keep junction temperature below 125°C, must stop operating full power before around 1000 seconds.
7kHz 3kHz
power loss
Allowable temp.
Fig. power losses allowable temp. 300Vdc
7kHz 3kHz
power loss
Allowable temp.
Fig.15 power losses allowable temp. 400Vdc
SPM32-AA Vdc=300[V], fs=15[kHz] Ipeak=10[A] Ta=40
80.0 70.0 Thermal Impedance-Zth(/W) 60.0 50.0 40.0 30.0 20.0 10.0 IGBT 0.01 Pulse width 1000 10000
Fig. thermal impedance, junction-to-air
Rev. 2002
Heatsink design guide
selection heat-sink constrained many factors including space, actual operating power dissipation, heat-sink cost, flow condition around heat-sink, assembly location etc. this paper, only some constraints analyzed give some insights heat-sink selection from practical application point view. Consider type heat-sink shown Fig.17, which directly adopted washing machines modified applications like conditioners. Figs. show analysis results heat-sink-to-ambient thermal resistance, Rha, designing heat-sink. This varies widely with changes spacing, fin/base-plate length fin/ base-plate width. increase thickness decreases total number fins size heat-sink, resulting increase thermal resistance.
Fig. heat-sink example a=Fin thickness (1.4mm), b=Fin spacing (6.0mm), c=Fin height (25mm) d=Fin length (37mm), e=Base-plate thickness (4.0mm) f=Base-plate width (112mm), g=Base-plate length (37mm)
Fig. shows results effect base-plate length thermal resistance. case where cooling used, that increase length 150%, that 55.5mm reduces resistance (1.85°C/W), increase 200% reduces resistance 70.8% (1.6°C/W). Fig. result variation height shows that increase height 150% reduces resistance (1.8°c/W). decrease height increases resistance 135% (3.05°C/W). Therefore, increasing height more effective reducing thermal resistance, compared with increasing length.
3m/s
1m/s 5m/s
(/W)
Fin&Base plate length, (mm)
Fig. Analysis results heat-sink plate length variation
Rev. 2002
(/W) height,
3m/s
1m/s 5m/s
Fig.19 Analysis results heat-sink height variation
Conclusion
novel 3-phase IGBT inverter module, (Smart Power Module), adopting ceramic-based transfer-molding technology, introduced. Details main design concepts, functional capabilities practical application issues described. targeted power inverter applications covering power rating range 220Vac input, resulting smaller system size, higher reliability, better cost-performance ratio. With unique technology, products will expanded cover wider power ranges applications providing super compact device size very near future
Rev. 2002
References Yamada "Next Generation Power Module," Intern. Symposium Power Semiconductor Devices IC's, Davos, Switzerland, 1994 Eric Motto, John Donlon, Iwamoto, "New Power Stage Building Blocks Small Motor Dirves," Power Electronics Proceedings, pp.343-349, November, Nobuyuki Matsui, "Sensorless Brushless Motor Drives," IEEE Transactions Industrial Electronics, Vol. IE-43, 300-308, 1996, April. Casanellas, "Losses inverters using IGBT's," Proc. Inst. Elect. Eng.-Elect. Power Applicant. vol. 141, 235-239, Sept.1994. Berringer, Marvin Perruchoud, "Semiconductor Power Losses inverters," Conf. Rec. IEEE IAS'95, 882-888, 1995 Smart power module user's guide, application note AN9018, Fairchild Semiconductor
Rev. 2002
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Kim, Jang, Choo, Lee, Suh, Abstract This paper presents novel 3-p

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