M5M5V416BTP 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC DES
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revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
DESCRIPTION
M5M5V416B amily oltage 4-Mbit static RAMs organized 262,144-words 16-bit, abricated Mitsubishi's high-perf ormance 0.25µm CMOS technology M5M5V416B suitable memory applications where simple interf acing battery operating battery backup important design objectiv M5M5V416BTP,RT packaged 44-pin 400mil thin small outline package. M5M5V416BTP (normal lead bend package) M5M5V416BRT (rev erse lead bend package) both easy design printed circuit board. From point operating temperature, amily ided into three ersions; "Standard", "W-v ersion", "I-v ersion". Those summarized part name table below. Version, Operating temperature Part name
M5M5V416BTP,RT -70L
FEATURES
Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty clocks, resh Data retention supply oltage=2.0V 3.6V inputs outputs compatible. Easy memory expansion Common Data Three-state outputs: OR-tie capability prev ents data contention Process technology 0.25µm CMOS Package: 400mil TSOP (II)
Power Supply
3.6V 3.6V 3.6V 3.6V 3.6V 3.6V
Access time
Stand-by urrent (PD), Vcc=3.0V pical Ratings (max.) 25°C -0.3µA -0.3µA -0.3µA 40°C 25°C 40°C -1µA -1µA -1µA -1µA -1µA -1µA -3µA -3µA -3µA 70°C 30µA 15µA 30µA 15µA 30µA
max.
70ns 85ns 70ns 85ns 70ns 85ns 70ns 85ns 70ns 85ns 70ns 85ns
Activ current Icc1 85°C (3.0V,
Standard
+70°C
M5M5V416BTP,RT -85L M5M5V416BTP,RT -70H M5M5V416BTP,RT -85H M5M5V416BTP,RT -70LW
ersion
+85°C
M5M5V416BTP,RT -85LW M5M5V416BTP,RT -70HW M5M5V416BTP,RT -85HW M5M5V416BTP,RT -70LI M5M5V416BTP,RT -85LI M5M5V416BTP,RT -70HI M5M5V416BTP,RT -85HI
60µA 30µA 60µA
50mA (10MHz) (1MHz)
ersion
+85°C
15µA 30µA
pical" parameter sampled, 100% tested.
CONFIGURATION
DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
Function Address input Chip select input Chip select input Write control input Output enable input Lower (DQ1 Upper (DQ9 Power supply Ground supply
DQ16 Data input output
44P3W-H
44P3W-J
Outline: 44P3W-H/J Connection
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
FUNCTION
M5M5V416BTP,RT organized 262,144-words 16-bit. These ices operate single +2.7~3.6V power supply directly compatible both input output. ully static circuit needs clocks resh, makes usef operation mode determined combination control inputs Each mode summarized unction table. write operation executed whenev erlaps with and/or high address(A0~A17) must write must stable during entire cycle. read operation executed etting high while and/or activ state(S1=L,S2=H). When setting high other pins activ stage upper-by selectable mode which both reading writing enabled, lower-by non-selectable mode. when setting high other pins activ stage, lowerby selectable mode upper-by non-selectable mode. When setting high high chips non-selectable mode which both reading writing disabled. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion BC1, power supply urrent reduced 0.3µA(25°C, pical), memory data held power supply enabling battery back-up operation during power ailure power-down operation non-selected mode.
FUNCTION TABLE
Mode
selection selection selection selection
DQ1~8
DQ9~16
Write Read Write Read Write Read
BLOCK DIAGRAM
MEMORY ARRAY 262144 WORDS BITS
CLOCK GENERATOR
High-Z High-Z High-Z High-Z Dout High-Z High-Z High-Z High-Z Dout High-Z
High-Z High-Z High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout High-Z
Standby Standby Standby Standby Activ Activ Activ Activ Activ Activ Activ Activ Activ
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Supply oltage Input oltage Output oltage Power dissipation Operating temperature Storage temperature Conditions With respect With respect With respect Ta=25°C Standard ersion ersion (-L, (-LW, -HW) (-LI, -HI) Ratings Units
-0.5 +4.6 -0.5 +150
-3.0V case (Pulse width 30ns)
ELECTRICAL CHARACTERISTICS
Symbol
Vcc=2.7 3.6V, unless otherwise noted) Conditions Limits Vcc+0.3V Units
Parameter High-lev input oltage Low-lev input oltage
High-level output voltage High-level output voltage
Low-lev output oltage Input leakage current Output leakage current Activ supply urrent AC,MOS Activ supply urrent AC,TTL
-0.5mA -0.05mA OL=2mA
BC2=VIH S1=VIH S2=VIH OE=VIH, VI/O=0 BC2< 0.2V, 0.2V, Vcc-0.2V other inputs 0.2V Vcc-0.2V Output open (duty 100%)
-0.3
Vcc-0.5V
10MHz 1MHz 10MHz 1MHz +85°C +70°C +85°C +70°C +40°C +25°C +25°C +25°C
BC2=V ,S2=V other pins Output open (duty 100%)
0.2V,
-LW, -LW, -HW, -HW,
other inputs
Stand upply current AC,MOS
0.2V,
other inputs
0.2V 0.2V, 0.2V Other inputs=0~Vcc
Stand upply current AC,TTL
BC2=VIH S1=VIH S2=VIL Other inputs=
Note Direction current flowing into indicated positive mark) Note Typical value Vcc=3.0V Ta=25°
-3.0V case (Pulse width 30ns)
CAPACITANCE
Symbol Parameter Input capacitance Output capacitance Conditions
(Vcc=2.7 3.6V, unless otherwise noted) Limits Units
=GND, =25mVrms, =1MHz GND,VO =25mVrms, =1MHz
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
ELECTRICAL CHARACTERISTICS TEST CONDITIONS
Supply oltage Input pulse
(Vcc=2.7 3.6V, unless otherwise noted)
2.7V~3.6V IH=2.4V,V IL=0.4V Input rise time time
erence
1TTL
Including scope capacitance
OH=V OL=1.5V
Transition measured ±500mV steady state voltage.(f ten,t
Output loads
Fig.1,CL=30pF CL=5pF (for ten,tdis)
Limits
Fig.1 Output load
READ CYCLE
Symbol a(A) a(S1) a(S2) a(BC1) a(BC2) a(OE) (S1) (S2) (BC1) (BC2) (OE) en(S1) en(S2) en(BC1) en(BC2) en(OE) Parameter Read time Address access time Chip select access time Chip select access time control access time control access time Output enable access time Output disable time high Output disable time Output disable time high Output disable time high Output disable time high Output enable time Output enable time high Output enable time Output enable time Output enable time Data alid time after address
70L,70H,70LW 70HW,70LI,70HI 85L,85H,85LW 85HW,85LI,85HI
Units
V(A)
WRITE CYCLE
Limits Symbol Parameter Write time Write pulse width Address setup time Address setup time with respect control setup time control setup time Chip select setup time Chip select setup time Data setup time Data hold time Write recov time Output disable time Output disable time high Output enable time high Output enable time
70L,70H,70LW 70HW,70LI,70HI 85L,85H,85LW 85HW,85LI,85HI
Units
w(W) su(A) su(A-WH) su(BC1) su(BC2) su(S1) su(S2) su(D) h(D) (OE) en(W) en(OE)
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
(4)TIMING DIAGRAMS Read cycle
0~17
a(A) a(BC1) BC1,BC2
(Note3)
a(BC2)
(Note3)
(BC1) (BC1) a(S1)
(Note3)
(S1) a(S2)
(Note3)
(Note3)
(S2) (OE)
(Note3)
(Note3)
(OE) (BC1) (BC2) (S1) (S2)
(OE)
(Note3)
1~16
VALID DATA
Write cycle control mode
0~17
(BC1) (BC2) BC1,BC2
(Note3) (Note3)
(Note3)
(S1)
(Note3)
(Note3)
(S2)
(Note3)
(OE) 1~16
(A-WH)
(OE)
DATA STABLE
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
0~17 BC1,BC2
(Note3)
(BC1) (BC2)
(Note3)
(Note3) (Note5) (Note4) (Note3) (Note3)
DATA STABLE
(Note3)
1~16
Note Hatching indicates state "don't care". Note Write occurs during low, high erlaps and/or low. Note When alling edge simultaneously prior alling edge and/or alling edge rising edge outputs maintained high impedance state. Note Don't apply erted phase signal externally when output mode.
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
0~17
BC1,BC2
(Note3)
(S1)
(Note3)
(Note3) (Note5) (Note3)
(Note3)
(Note4)
DATA STABLE
(Note3)
1~16
Write cycle control mode)
0~17
BC1,BC2
(Note3)
(S2)
(Note3)
(Note3) (Note5) (Note3)
(Note3)
(Note4)
DATA STABLE
(Note3)
1~16
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
POWER DOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS
Symbol Parameter Limits Test conditions Units
(PD) Power down supply voltage Byte control input
(BC) (S1) (S2)
Chip select input Chip select input
Vcc=3.0V
0.2V 0.2V other inputs=0~3V 0.2V
-LW, -LW, -HW, -HW,
+85°C +70°C +85°C +70°C +40°C +25°C +25°C +25°C
(PD)
Power down supply urrent
0.2V other inputs=0~3V Vcc-0.2V 0.2V Vcc-0.2V other inputs=0~3V
TIMING REQUIREMENTS
Symbol Parameter Power down time Power down recov Test conditions
Typical value Ta=25°C
Limits
Units
(PD) (PD)
TIMING DIAGRAM
control mode
Note7: control mode, must ixed Vcc-0.2V 0.2V.
(PD) 2.2V control mode 0.2V control mode (PD)
2.7V
2.7V
(PD) 2.2V
0.2V
2.7V 0.2V
2.7V
(PD) 0.2V
2.7V (PD) 2.2V
2.7V (PD) 2.2V
0.2V
MITSUBISHI ELECTRIC
revision-P10, 00.6.01
M5M5V416BTP
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Revision History Revision
History first edition Pin#28: Font problem fixed 70ns version added Icc1/Icc2 revised Speed items revised: 100ns deleted Icc3 Icc(PD) limits revised Errata corrected (page tsu(A-WH), tsu(BC1), tsu(BC2), tsu(S1) tsu(S2) revised from 65ns 60ns first product version
Date
Remark Preliminary Preliminary Preliminary Preliminary Preliminary Preliminary
Preliminary
MITSUBISHI ELECTRIC
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MITSUBISHI ELECTRIC
44P3W-H
Plastic 44pin 400mil TSOP(II) Weight(g) 0.47
EIAJ Package Code TSOPII44-P-400-0.80 Scale:
JEDEC Code
Lead Material Alloy
Recommended Mount Symbol
Detail
Detail
Dimension Millimeters 0.05 0.125 0.45 0.35 0.125 0.175 0.105 18.31 18.51 18.41 10.06 10.26 10.16 11.56 11.96 11.76 0.45 0.75 0.25 0.805 0.955 0.16 10.36
44P3W-J
Weight(g) 0.47
Plastic 44pin 400mil TSOP(II) Lead Material Alloy
EIAJ Package Code TSOPII44-P-400-0.80 Scale:
JEDEC Code
Recommended Mount Symbol
Detail
Detail
Dimension Millimeters 0.05 0.125 0.35 0.45 0.105 0.125 0.175 18.31 18.51 18.41 10.06 10.26 10.16 11.56 11.96 11.76 0.45 0.75 0.25 0.805 0.955 0.16 10.36
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