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M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC DES


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revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
DESCRIPTION
M5M5V416B amily oltage 4-Mbit static RAMs organized 262,144-words 16-bit, abricated Mitsubishi's high-perf ormance 0.25µm CMOS technology M5M5V416B suitable memory applications where simple interf acing battery operating battery backup important design objectiv M5M5V416BUG packaged (chip scale package), with outline 8.5mm, ball matrix (48pin) ball pitch 0.75mm. best solution compaction mounting area well lexibility wiring pattern printed circuit boards.
Those summarized part name table below.
FEATURES
Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty clocks, resh Data retention supply oltage =2.0V 3.6V inputs outputs compatible. Easy memory expansion Common Data Three-state outputs: OR-tie capability prev ents data contention Process technology 0.25µm CMOS Package: 48pin 8.5mm
Version, Operating temperature Part name
Power Supply
Access time
max.
Activ current pical Ratings (max.) Icc1 25°C 40°C 25°C 40°C 70°C 85°C (3.0V, Stand-by urrent (PD), Vcc=3.0V 50mA (10MHz) (1MHz)
ersion
+85°C
M5M5V416BUG -70HI
3.6V
70ns
0.3µA
15µA 30µA
pical" parameter sampled, 100% tested.
CONFIGURATION
(TOP VIEW)
Function Address input Data input output Chip select input Chip select input Write control input Output enable input Lower (DQ1 Upper (DQ9 Power supply Ground supply
DQ10 DQ11
DQ16
DQ12
DQ13
DQ15
DQ14
DQ16
N.C.
N.C.
N.C.
Outline: 48FJA Connection
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
FUNCTION
M5M5V416BWG organized 262,144-words 16-bit. These ices operate single +2.7~3.6V power supply directly compatible both input output. ully atic circuit needs clocks resh, makes usef operation mode determined combination control inputs Each mode summarized unction table. write operation executed whenev erlaps with and/or high address(A0~A17) must write must stable during entire cycle. read operation executed etting high while and/or activ state(S1=L,S2=H). When setting high other pins activ stage upper-by selectable mode which both reading writing enabled, lower-by non-selectable mode. when setting high other pins activ stage, lowerby selectable mode upper-by non-selectable mode. When setting high high chips non-selectable mode which both reading writing disabled. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion BC1, power supply urrent reduced 0.3µA(25°C, pical), memory data held power supply enabling battery back-up operation during power ailure power-down operation non-selected mode.
FUNCTION TABLE
Mode
selection selection selection
DQ1~8
DQ9~16 High-Z High-Z Standby
High-Z High-Z Standby High-Z High-Z Standby High-Z Activ Dout High-Z Activ High-Z High-Z High-Z High-Z Dout High-Z High-Z Dout Dout High-Z High-Z Activ Activ Activ Activ Activ Activ Activ
Write Read Write Read Write Read
BLOCK DIAGRAM
MEMORY ARRAY 262144 WORDS BITS
CLOCK GENERATOR
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Supply oltage Input oltage Output oltage Power dissipation Operating temperature Storage temperature Conditions With respect With respect With respect Ta=25°C ersion Ratings Units
-0.5 +4.6 -0.5 +150
-3.0V case (Pulse width 30ns)
ELECTRICAL CHARACTERISTICS
Symbol
Vcc=2.7 3.6V, unless otherwise noted) Conditions Limits Vcc+0.3V Units
Parameter High-lev input oltage Low-lev input oltage
High-level output voltage High-level output voltage
Low-lev output oltage Input leakage current Output leakage current Activ supply urrent AC,MOS Activ supply urrent AC,TTL
-0.5mA -0.05mA OL=2mA
BC2=VIH S1=VIH S2=VIH OE=VIH, VI/O=0 BC2< 0.2V, 0.2V, Vcc-0.2V other inputs 0.2V Vcc-0.2V Output open (duty 100%)
-0.3
Vcc-0.5V
10MHz 1MHz 10MHz 1MHz +85°C +70°C +40°C +25°C +25°C +25°C
BC2=V ,S2=V other pins Output open (duty 100%)
0.2V,
other inputs
Stand upply current AC,MOS
0.2V,
other inputs
0.2V 0.2V, 0.2V
Other inputs=0~Vcc
Stand upply current AC,TTL
BC2=VIH S1=VIH S2=VIL Other inputs=
Note Direction current flowing into indicated positive mark) Note Typical value Vcc=3.0V Ta=25°
-3.0V case (Pulse width 30ns)
CAPACITANCE
Symbol Parameter Input capacitance Output capacitance Conditions
(Vcc=2.7 3.6V, unless otherwise noted) Limits Units
=GND, =25mVrms, =1MHz GND,VO =25mVrms, =1MHz
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
ELECTRICAL CHARACTERISTICS TEST CONDITIONS
Supply oltage Input pulse
(Vcc=2.7 3.6V, unless otherwise noted)
2.7V~3.6V IH=2.4V,V IL=0.4V Input rise time time
erence
1TTL
Including scope capacitance
OH=V OL=1.5V
Transition measured ±500mV steady state voltage.(f ten,t
Output loads
Fig.1,CL=30pF CL=5pF (for ten,tdis)
Fig.1 Output load
READ CYCLE
Limits Symbol a(A) a(S1) a(S2) a(BC1) a(BC2) a(OE) (S1) (S2) (BC1) (BC2) (OE) en(S1) en(S2) en(BC1) en(BC2) en(OE) Parameter Read time Address access time Chip select access time Chip select access time control access time control access time Output enable access time Output disable time high Output disable time Output disable time high Output disable time high Output disable time high Output enable time Output enable time high Output enable time Output enable time Output enable time Data alid time after address Units
V(A)
WRITE CYCLE
Limits Symbol Parameter Units
Write time w(W) Write pulse width su(A) Address setup time su(A-WH) Address setup time with respect su(BC1) control setup time su(BC2) control setup time su(S1) Chip select setup time su(S2) Chip select setup time su(D) Data setup time h(D) Data hold time Write recov time Output disable time (OE) Output disable time high en(W) Output enable time high en(OE) Output enable time
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
(4)TIMING DIAGRAMS Read cycle
0~17 a(BC1) BC1,BC2
(Note3)
a(A) (BC2)
(BC1) (BC1) a(S1)
(Note3)
(Note3)
(S1) a(S2)
(Note3)
(Note3)
(S2) (OE)
(Note3)
(Note3)
(OE) (BC1) (BC2) (S1) (S2)
(OE)
(Note3)
1~16
VALID DATA
Write cycle control mode
0~17
(BC1) (BC2) BC1,BC2
(Note3) (Note3)
(Note3)
(S1)
(Note3)
(Note3)
(S2)
(Note3)
(OE) 1~16
(A-WH)
(OE)
DATA STABLE
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
0~17 BC1,BC2
(Note3)
(BC1) (BC2)
(Note3)
(Note3) (Note5) (Note4) (Note3) (Note3)
DATA STABLE
(Note3)
1~16
Note Hatching indicates state "don't care". Note Write occurs during low, high erlaps and/or low. Note When alling edge simultaneously prior alling edge and/or alling edge rising edge outputs maintained high impedance state. Note Don't apply erted phase signal externally when output mode.
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Write cycle control mode)
0~17
BC1,BC2
(Note3)
(S1)
(Note3)
(Note3) (Note5) (Note3)
(Note3)
(Note4)
DATA STABLE
(Note3)
1~16
Write cycle control mode)
0~17
BC1,BC2
(Note3)
(S2)
(Note3)
(Note3) (Note5) (Note3)
(Note3)
(Note4)
DATA STABLE
(Note3)
1~16
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
POWER DOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS
Symbol Parameter Limits Test conditions Units
(PD) Power down supply voltage Byte control input
(BC) (S1) (S2)
Chip select input Chip select input
Vcc=3.0V Vcc-0.2V <0.2V Vcc-0.2V other inputs=0~3V >Vcc 0.2V other inputs=0~3V 0.2V other inputs=0~3V
+85°C +70°C +40°C +25°C +25°C +25°C
(PD)
Power down supply urrent
TIMING REQUIREMENTS
Symbol Parameter Power down time Power down recov Test conditions
Typical value Ta=25°C
Limits
Units
(PD) (PD)
TIMING DIAGRAM
control mode (PD) control mode 2.2V 0.2V
Note mode must ixed 0.2V 0.2V.
2.7V
2.7V
(PD) 2.2V
(PD) 2.2V control mode 0.2V (PD)
2.7V
2.7V
(PD) 2.2V
0.2V
2.7V 0.2V
2.7V
(PD) 0.2V
MITSUBISHI ELECTRIC
revision-01, 17th July
M5M5V416BUG
4194304-BIT (262144-WORD 16-BIT) CMOS STATIC
Revision History Revision
History first edition
Date 17th July
Remark
MITSUBISHI ELECTRIC
Keep safety first your circuit designs!
Mitsubishi Electric Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) non-flammable material (iii) prevention against malfunction mishap.
Notes regarding these materials
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