| The Datasheet Archive - 100 Million Datasheets from 7500 Manufacturers. |
M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC DES
Top Searches for this datasheetrevision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC DESCRIPTION M5M5V416B amily oltage 4-Mbit static RAMs organized 262,144-words 16-bit, abricated Mitsubishi's high-perf ormance 0.25µm CMOS technology M5M5V416B suitable memory applications where simple interf acing battery operating battery backup important design objectiv M5M5V416BUG packaged (chip scale package), with outline 8.5mm, ball matrix (48pin) ball pitch 0.75mm. best solution compaction mounting area well lexibility wiring pattern printed circuit boards. Those summarized part name table below. FEATURES Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty clocks, resh Data retention supply oltage =2.0V 3.6V inputs outputs compatible. Easy memory expansion Common Data Three-state outputs: OR-tie capability prev ents data contention Process technology 0.25µm CMOS Package: 48pin 8.5mm Version, Operating temperature Part name Power Supply Access time max. Activ current pical Ratings (max.) Icc1 25°C 40°C 25°C 40°C 70°C 85°C (3.0V, Stand-by urrent (PD), Vcc=3.0V 50mA (10MHz) (1MHz) ersion +85°C M5M5V416BUG -70HI 3.6V 70ns 0.3µA 15µA 30µA pical" parameter sampled, 100% tested. CONFIGURATION (TOP VIEW) Function Address input Data input output Chip select input Chip select input Write control input Output enable input Lower (DQ1 Upper (DQ9 Power supply Ground supply DQ10 DQ11 DQ16 DQ12 DQ13 DQ15 DQ14 DQ16 N.C. N.C. N.C. Outline: 48FJA Connection MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC FUNCTION M5M5V416BWG organized 262,144-words 16-bit. These ices operate single +2.7~3.6V power supply directly compatible both input output. ully atic circuit needs clocks resh, makes usef operation mode determined combination control inputs Each mode summarized unction table. write operation executed whenev erlaps with and/or high address(A0~A17) must write must stable during entire cycle. read operation executed etting high while and/or activ state(S1=L,S2=H). When setting high other pins activ stage upper-by selectable mode which both reading writing enabled, lower-by non-selectable mode. when setting high other pins activ stage, lowerby selectable mode upper-by non-selectable mode. When setting high high chips non-selectable mode which both reading writing disabled. this mode, output stage high-impedance state, allowing OR-tie with other chips memory expansion BC1, power supply urrent reduced 0.3µA(25°C, pical), memory data held power supply enabling battery back-up operation during power ailure power-down operation non-selected mode. FUNCTION TABLE Mode selection selection selection DQ1~8 DQ9~16 High-Z High-Z Standby High-Z High-Z Standby High-Z High-Z Standby High-Z Activ Dout High-Z Activ High-Z High-Z High-Z High-Z Dout High-Z High-Z Dout Dout High-Z High-Z Activ Activ Activ Activ Activ Activ Activ Write Read Write Read Write Read BLOCK DIAGRAM MEMORY ARRAY 262144 WORDS BITS CLOCK GENERATOR MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC ABSOLUTE MAXIMUM RATINGS Symbol Parameter Supply oltage Input oltage Output oltage Power dissipation Operating temperature Storage temperature Conditions With respect With respect With respect Ta=25°C ersion Ratings Units -0.5 +4.6 -0.5 +150 -3.0V case (Pulse width 30ns) ELECTRICAL CHARACTERISTICS Symbol Vcc=2.7 3.6V, unless otherwise noted) Conditions Limits Vcc+0.3V Units Parameter High-lev input oltage Low-lev input oltage High-level output voltage High-level output voltage Low-lev output oltage Input leakage current Output leakage current Activ supply urrent AC,MOS Activ supply urrent AC,TTL -0.5mA -0.05mA OL=2mA BC2=VIH S1=VIH S2=VIH OE=VIH, VI/O=0 BC2< 0.2V, 0.2V, Vcc-0.2V other inputs 0.2V Vcc-0.2V Output open (duty 100%) -0.3 Vcc-0.5V 10MHz 1MHz 10MHz 1MHz +85°C +70°C +40°C +25°C +25°C +25°C BC2=V ,S2=V other pins Output open (duty 100%) 0.2V, other inputs Stand upply current AC,MOS 0.2V, other inputs 0.2V 0.2V, 0.2V Other inputs=0~Vcc Stand upply current AC,TTL BC2=VIH S1=VIH S2=VIL Other inputs= Note Direction current flowing into indicated positive mark) Note Typical value Vcc=3.0V Ta=25° -3.0V case (Pulse width 30ns) CAPACITANCE Symbol Parameter Input capacitance Output capacitance Conditions (Vcc=2.7 3.6V, unless otherwise noted) Limits Units =GND, =25mVrms, =1MHz GND,VO =25mVrms, =1MHz MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC ELECTRICAL CHARACTERISTICS TEST CONDITIONS Supply oltage Input pulse (Vcc=2.7 3.6V, unless otherwise noted) 2.7V~3.6V IH=2.4V,V IL=0.4V Input rise time time erence 1TTL Including scope capacitance OH=V OL=1.5V Transition measured ±500mV steady state voltage.(f ten,t Output loads Fig.1,CL=30pF CL=5pF (for ten,tdis) Fig.1 Output load READ CYCLE Limits Symbol a(A) a(S1) a(S2) a(BC1) a(BC2) a(OE) (S1) (S2) (BC1) (BC2) (OE) en(S1) en(S2) en(BC1) en(BC2) en(OE) Parameter Read time Address access time Chip select access time Chip select access time control access time control access time Output enable access time Output disable time high Output disable time Output disable time high Output disable time high Output disable time high Output enable time Output enable time high Output enable time Output enable time Output enable time Data alid time after address Units V(A) WRITE CYCLE Limits Symbol Parameter Units Write time w(W) Write pulse width su(A) Address setup time su(A-WH) Address setup time with respect su(BC1) control setup time su(BC2) control setup time su(S1) Chip select setup time su(S2) Chip select setup time su(D) Data setup time h(D) Data hold time Write recov time Output disable time (OE) Output disable time high en(W) Output enable time high en(OE) Output enable time MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC (4)TIMING DIAGRAMS Read cycle 0~17 a(BC1) BC1,BC2 (Note3) a(A) (BC2) (BC1) (BC1) a(S1) (Note3) (Note3) (S1) a(S2) (Note3) (Note3) (S2) (OE) (Note3) (Note3) (OE) (BC1) (BC2) (S1) (S2) (OE) (Note3) 1~16 VALID DATA Write cycle control mode 0~17 (BC1) (BC2) BC1,BC2 (Note3) (Note3) (Note3) (S1) (Note3) (Note3) (S2) (Note3) (OE) 1~16 (A-WH) (OE) DATA STABLE MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC Write cycle control mode) 0~17 BC1,BC2 (Note3) (BC1) (BC2) (Note3) (Note3) (Note5) (Note4) (Note3) (Note3) DATA STABLE (Note3) 1~16 Note Hatching indicates state "don't care". Note Write occurs during low, high erlaps and/or low. Note When alling edge simultaneously prior alling edge and/or alling edge rising edge outputs maintained high impedance state. Note Don't apply erted phase signal externally when output mode. MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC Write cycle control mode) 0~17 BC1,BC2 (Note3) (S1) (Note3) (Note3) (Note5) (Note3) (Note3) (Note4) DATA STABLE (Note3) 1~16 Write cycle control mode) 0~17 BC1,BC2 (Note3) (S2) (Note3) (Note3) (Note5) (Note3) (Note3) (Note4) DATA STABLE (Note3) 1~16 MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC POWER DOWN CHARACTERISTICS ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Units (PD) Power down supply voltage Byte control input (BC) (S1) (S2) Chip select input Chip select input Vcc=3.0V Vcc-0.2V <0.2V Vcc-0.2V other inputs=0~3V >Vcc 0.2V other inputs=0~3V 0.2V other inputs=0~3V +85°C +70°C +40°C +25°C +25°C +25°C (PD) Power down supply urrent TIMING REQUIREMENTS Symbol Parameter Power down time Power down recov Test conditions Typical value Ta=25°C Limits Units (PD) (PD) TIMING DIAGRAM control mode (PD) control mode 2.2V 0.2V Note mode must ixed 0.2V 0.2V. 2.7V 2.7V (PD) 2.2V (PD) 2.2V control mode 0.2V (PD) 2.7V 2.7V (PD) 2.2V 0.2V 2.7V 0.2V 2.7V (PD) 0.2V MITSUBISHI ELECTRIC revision-01, 17th July M5M5V416BUG 4194304-BIT (262144-WORD 16-BIT) CMOS STATIC Revision History Revision History first edition Date 17th July Remark MITSUBISHI ELECTRIC Keep safety first your circuit designs! Mitsubishi Electric Corporation puts maximum effort into making semiconductor products better more reliable, there always possibility that trouble occur with them. Trouble with semiconductors lead personal injury, fire property damage. Remember give consideration safety when making your circuit designs, with appropriate measures such placement substitutive, auxiliary circuits, (ii) non-flammable material (iii) prevention against malfunction mishap. Notes regarding these materials These materials intended reference assist customers selection Mitsubishi semiconductor product best suited customer's application; they convey license under intellectual property rights, other rights, belonging Mitsubishi Electric Corporation third party. Mitsubishi Electric Corporation assumes responsibility damage, infringement third-party's rights, originating product data, diagrams, charts, programs, algorithms, circuit application examples contained these materials. information contained these materials, including product data, diagrams, charts, programs algorithms represents information products time publication these materials, subject change Mitsubishi Electric Corporation without notice product improvements other reasons. therefore recommended that customers contact Mitsubishi Electric Corporation authorized Mitsubishi Semiconductor product distributor latest product information before purchasing product listed herein. information described here contain technical inaccuracies typographical errors. Mitsubishi Electric Corporation assumes responsibility damage, liability, other loss rising from these inaccuracies errors. Please also attention information published Mitsubishi Electric Corporation various means, including Mitsubishi Semiconductor home page When using information contained these materials, including product data, diagrams, charts, programs, algorithms, please sure evaluate information total system before making final decision applicability information products. Mitsubishi Electric Corporation assumes responsibility damage, liability other loss resulting from information contained herein. Mitsubishi Electric Corporation semiconductors designed manufactured device system that used under circumstances which human life potentially stake. Please contact Mitsubishi Electric Corporation authorized Mitsubishi Semiconductor product distributor when considering product contained herein specific purposes, such apparatus systems transportation, vehicular, medical, aerospace, nuclear, undersea repeater use. prior written approval Mitsubishi Electric Corporation necessary reprint reproduce whole part these materials. these products technologies subject Japanese export control restrictions, they must exported under license from Japanese government cannot imported into country other than approved destination. diversion reexport contrary export control laws regulations Japan and/or country destination prohibited. Please contact Mitsubishi Electric Corporation authorized Mitsubishi Semiconductor product distributor further details these materials products contained therein. MITSUBISHI ELECTRIC Other recent searchesPQ60120EML04 - PQ60120EML04 PQ60120EML04 Datasheet PG100RS - PG100RS PG100RS Datasheet PG106RS - PG106RS PG106RS Datasheet EUA4890 - EUA4890 EUA4890 Datasheet ESM6045AV - ESM6045AV ESM6045AV Datasheet ENN7399 - ENN7399 ENN7399 Datasheet CPH6519 - CPH6519 CPH6519 Datasheet EL6245C - EL6245C EL6245C Datasheet BSH121 - BSH121 BSH121 Datasheet ADNS-7700 - ADNS-7700 ADNS-7700 Datasheet
Privacy Policy | Disclaimer |