*Preferred Device Plastic Medium-Power Complementary Silicon Tran

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(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
*Preferred Device
Plastic Medium-Power Complementary Silicon Transistors
designed general-purpose amplifier low-speed switching applications. High Current Gain 2500 (Typ) Collector-Emitter Sustaining Voltage mAdc VCEO(sus) (Min) 2N6040, 2N6043 (Min) 2N6042, 2N6045 Collector-Emitter Saturation Voltage VCE(sat) (Max) 2N6043,44 (Max) 2N6042, 2N6045 Monolithic Construction with Built-In Base-Emitter Shunt Resistors EPOXY MEETS 0.125 Ratings: Human Body Model, 8000 Machine Model,
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DARLINGTON, COMPLEMENTARY SILICON POWER TRANSISTORS
MARKING DIAGRAM
AYWW 2Nxxxx
STYLE BASE COLLECTOR EMITTER COLLECTOR
MAXIMUM RATINGS (Note
Rating
Symbol VCEO 2N6040 2N6043 2N6042 2N6045 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current- Base Current Continuous Peak mAdc W/°C Total Power Dissipation 25°C Derate above 25°C 0.60 Operating Storage Junction, Temperature Range Tstg
TO-220AB CASE 221A-09 Style xxxx Specific Device Code: 6040, 6042, 6043, 6045 Assembly Location Year Work Week
ORDERING INFORMATION
Device 2N6040 2N6042 2N6043 2N6045 Package TO-220AB TO-220AB TO-220AB TO-220AB Shipping Units Rail Units Rail Units Rail Units Rail
THERMAL CHARACTERISTICS
Characteristic
Symbol
Unit
Thermal Resistance, Junction Case
1.67
°C/W °C/W
Thermal Resistance, Junction Ambient
*Preferred devices recommended choices future best overall value.
Indicates JEDEC Registered Data.
Semiconductor Components Industries, LLC, 2003
August, 2003 Rev.
Publication Order Number: 2N6040/D
*Indicates JEDEC Registered Data. DYNAMIC CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS
*ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Small-Signal Current Gain Adc, Vdc, kHz)
Output Capacitance (VCB Vdc, MHz)
Small Signal Current Gain Adc, Vdc, MHz)
Base-Emitter Voltage Adc, Vdc)
Base-Emitter Saturation Voltage Adc, mAdc)
Collector-Emitter Saturation Voltage Adc, mAdc) Adc, mAdc) Adc, Adc)
Current Gain Adc, Vdc) Adc, Vdc) Adc, Vdc)
Emitter Cutoff Current (VBE Vdc,
Collector Cutoff Current (VCB Vdc,
Collector Cutoff Current (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc) (VCE Vdc, VBE(off) Vdc, 150°C) (VCE Vdc, VBE(off) Vdc, 150°C) (VCE Vdc, VBE(off) Vdc, 150°C)
Collector Cutoff Current (VCE Vdc, (VCE Vdc,
Collector-Emitter Sustaining Voltage mAdc,
(VCB Vdc,
(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
Characteristic
POWER DISSIPATION (WATTS)
Figure Power Derating
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TEMPERATURE (°C)
2N6040, 2N6043 2N6042, 2N6045 2N6040, 2N6043 2N6041, 2N6044 2N6042, 2N6045
2N6040, 2N6043, 2N6042, 2N6045 Types
2N6040, 2N6043, 2N6042, 2N6045 Types
2N6040, 2N6043
2N6042, 2N6045
2N6040, 2N6043 2N6042, 2N6045
2N6040, 2N6043
2N6042, 2N6045
2N6040/2N6042 2N6043/2N6045
VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) ICBO ICEO IEBO ICEX |hfe| 1000 1000 20.000 20,000
mAdc
Unit
(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
VARIED OBTAIN DESIRED CURRENT LEVELS MUST FAST RECOVERY TYPE, 1N5825 USED ABOVE MSD6100 USED BELOW
approx +8.0 approx DUTY CYCLE 1.0% +4.0
disconnected test circuit reverse polarities
TIME
SCOPE
IC/IB 25°C VBE(off) 0.07 0.05 COLLECTOR CURRENT (AMP)
Figure Switching Times Equivalent Circuit
0.07 0.05 0.03 0.02 0.05 0.02 SINGLE PULSE 0.01
Figure Switching Times
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
P(pk) qJC(t) r(t) 1.67°C/W CURVES APPLY POWER PULSE TRAIN SHOWN READ TIME TJ(pk) P(pk) qJC(t) DUTY CYCLE, t1/t2
0.01 0.01
0.02 0.03
0.05
TIME PULSE WIDTH (ms)
1000
Figure Thermal Response
COLLECTOR CURRENT (AMP) 150°C BONDING WIRE LIMITED THERMALLY LIMITED 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 2N6040, 2N6043 2N6045 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.05
0.02
There limitations power handling ability transistor: average junction temperature second breakdown. Safe operating area curves indicate limits transistor that must observed reliable operation; i.e., transistor must subjected greater dissipation than curves indicate. data Figure based TJ(pk) 150°C; variable depending conditions. Second breakdown pulse limits valid duty cycles provided TJ(pk) 150°C. TJ(pk) calculated from data Figure high case temperatures, thermal limitations will reduce power that handled values less than limitations imposed second breakdown.
Figure Active-Region Safe Operating Area
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(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
10,000 hfe, SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 FREQUENCY (kHz) 1000 25°C 25°C CAPACITANCE (pF)
REVERSE VOLTAGE (VOLTS)
Figure Small-Signal Current Gain
Figure Capacitance
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(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
2N6040, 2N6042
20,000 10,000 CURRENT GAIN 7000 5000 3000 2000 1000 20,000 10,000 CURRENT GAIN 7000 5000 3000 2000 25°C 1000 150°C
2N6043, 2N6045
150°C 25°C
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure Current Gain
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
BASE CURRENT (mA)
BASE CURRENT (mA)
Figure Collector Saturation Region
25°C VOLTAGE (VOLTS) VOLTAGE (VOLTS)
25°C
VBE(sat) IC/IB VCE(sat) IC/IB
VBE(sat) IC/IB VCE(sat) IC/IB
7.010
COLLECTOR CURRENT (AMP)
COLLECTOR CURRENT (AMP)
Figure "On" Voltages
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(PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045*
PACKAGE DIMENSIONS
TO-220AB CASE 221A-09 ISSUE
SEATING PLANE NOTES: DIMENSIONING TOLERANCING ANSI Y14.5M, 1982. CONTROLLING DIMENSION: INCH. DIMENSION DEFINES ZONE WHERE BODY LEAD IRREGULARITIES ALLOWED. INCHES 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 0.080 MILLIMETERS 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 2.04
STYLE BASE COLLECTOR EMITTER COLLECTOR
Semiconductor registered trademarks Semiconductor Components Industries, (SCILLC). SCILLC reserves right make changes without further notice products herein. SCILLC makes warranty, representation guarantee regarding suitability products particular purpose, does SCILLC assume liability arising application product circuit, specifically disclaims liability, including without limitation special, consequential incidental damages. "Typical" parameters which provided SCILLC data sheets and/or specifications vary different applications actual performance vary over time. operating parameters, including "Typicals" must validated each customer application customer's technical experts. SCILLC does convey license under patent rights rights others. SCILLC products designed, intended, authorized components systems intended surgical implant into body, other applications intended support sustain life, other application which failure SCILLC product could create situation where personal injury death occur. Should Buyer purchase SCILLC products such unintended unauthorized application, Buyer shall indemnify hold SCILLC officers, employees, subsidiaries, affiliates, distributors harmless against claims, costs, damages, expenses, reasonable attorney fees arising directly indirectly, claim personal injury death associated with such unintended unauthorized use, even such claim alleges that SCILLC negligent regarding design manufacture part. SCILLC Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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2N6040/D

*Preferred Device Plastic Medium-Power Complementary Silicon Tran

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