DRIVER-AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1308F GaAs MMI

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DRIVER-AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1308F GaAs MMI

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NJG1308F
DRIVER-AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION NJG1308F GaAs MMIC Driver-Amplifier 800MHz1.9 band Cellular phone System. features current consumption high gain. Small MTP6 package adopted. nPACKAGE OUTLINE
NJG1308F
nFEATURES lLow supply voltage operation lLow current consumption lHigh gain lPout Gain Compression point lPackage nPIN CONFIGURATION TYPE (Top View)
+3.0V typ. 15mA typ. @Pout =+8dBm 18dB typ. @f=938MHz 16dB @f=1441MHz 14dB @f=1900MHz +12dBm typ. @f=938MHz +11dBm typ. @f=1441/1900MHz MTP6
connection 1.RFin 2.GND 3.BPC 4.RFout 5.GND 6.GND
Note:
package orientation mark.
NJG1308F
nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL Topr Tstg CONDITIONS (Ta=+25°C, =Zl=50) RATINGS UNITS -40~+85 -55~+150
nELECTRICAL CHARACTERISTICS 1(Application circuit PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) Input VSWR Output VSWR SYMBOL Freq Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS =3.0V =3.0V, Pout =+8dBm =3.0V, Pin=-10dBm =3.0V, Pin=-10dBm =3.0V =3.0V, Pout =+8dBm offset=50kHz Pin;/4 DQPSK =3.0V =3.0V (Ta=+25°C, =Zl=50) UNITS
nELECTRICAL CHARACTERISTICS (Application circuit PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout Gain Compression point Adjacent Channel Leakage Power (PDC Regulation) Input VSWR Output VSWR SYMBOL freq Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS =3.0V =3.0V, Pout =+8dBm =3.0V, Pin=-10dBm =3.0V, Pin=-10dBm =3.0V =3.0V, Pout =+8dBm offset=50kHz Pin; DQPSK =3.0V =3.0V 1429 (Ta=+25°C, =Zl=50) UNITS 1441 1453
NJG1308F
nELECTRICAL CHARACTERISTICS (Application circuit PARAMETER Operating Frequency Drain Voltage Operating Current Small Signal Gain Gain Flatness Pout Gain Compression point Adjacent Channel Leakage Power (PHS Regulation) Input VSWR Output VSWR SYMBOL freq Gain Gflat P-1dB Pacp VSWRi VSWRo CONDITIONS =3.0V =3.0V, Pout =+8dBm =3.0V, Pin=-10dBm =3.0V, Pin=-10dBm =3.0V =3.0V, Pout =+8dBm offset=600kHz Pin; DQPSK =3.0V =3.0V 1890 (Ta=+25°C, =Zl=50) UNITS 1900 1920
nELECTRICAL CHARACTERISTICS (Application circuit PARAMETER Operating Frequency Supply Voltage Operating Current Power Gain Gain Flatness Pout Compression point Input VSWR Output VSWR SYMBOL freq Gain Gflat P-1Db VSWRI VSWRo CONDITIONS =3.0V =3.0V, Pout =+8dBm =3.0V, Pin=-10dBm =3.0V, Pin=-10dBm =3.0V =3.0V =3.0V (Ta=+25°C, =Zl=50) UNITS 1750 1765 1780
NJG1308F
nTYPICAL CHARACTERISTICS (Application circuit
NJG1308F
nTYPICAL CHARACTERISTICS (Application circuit
NJG1308F
nTYPICAL CHARACTERISTICS (Application circuit
NJG1308F
nTYPICAL CHARACTERISTICS (Application circuit
S21,S11,S22,S12 FREQUENCY
S21,S11,S22 (dB) (dB)
=3V)
Frequency (GHz)
NJG1308F
nTYPICAL CHARACTERISTICS Scattering Parameters (VDD =3V) Freq. (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 0.865 0.853 0.834 0.810 0.788 0.757 0.729 0.700 0.672 0.645 0.618 0.589 0.563 0.541 0.519 0.502 0.489 0.490 0.502 0.536 0.592 0.669 0.760 0.851 0.920 0.951 (deg) -26.1 -32.2 -38.2 -43.7 -48.5 -52.8 -56.7 -60.3 -63.1 -65.6 -67.7 -69.0 -69.7 -69.8 -69.6 -67.9 -65.9 -62.3 -58.9 -55.6 -53.5 -53.8 -56.9 -62.8 -70.6 -79.2 4.892 5.060 5.093 5.046 4.974 4.801 4.650 4.457 4.271 4.083 3.893 3.687 3.509 3.317 3.122 2.904 2.696 2.432 2.150 1.814 1.409 0.933 0.461 0.575 1.154 1.703 (deg) 174.0 163.2 152.9 143.5 134.5 126.4 118.6 111.5 104.6 98.0 91.3 85.2 79.3 72.9 66.5 60.0 53.6 46.6 39.1 31.9 24.6 21.3 41.1 106.1 113.3 105.2 0.029 0.030 0.033 0.035 0.036 0.038 0.039 0.041 0.043 0.045 0.046 0.049 0.051 0.055 0.058 0.060 0.063 0.065 0.065 0.066 0.062 0.056 0.050 0.048 0.060 0.081 (deg) 52.0 48.7 46.2 46.4 44.5 43.5 42.7 44.0 43.3 44.6 44.0 43.8 42.4 40.3 38.3 35.8 31.4 25.7 17.4 -5.9 -24.0 -54.3 -96.7 -140.4 -172.8 0.718 0.681 0.648 0.626 0.603 0.590 0.580 0.579 0.577 0.581 0.588 0.597 0.612 0.630 0.650 0.671 0.700 0.728 0.764 0.795 0.828 0.846 0.842 0.800 0.731 0.624 (deg) -56.5 -63.4 -69.6 -74.9 -78.8 -82.4 -85.6 -88.8 -90.9 -93.6 -96.0 -98.5 -100.8 -103.7 -106.9 -110.2 -114.5 -119.5 -125.8 -132.8 -142.1 -153.2 -166.5 178.6 161.6 144.2
nPIN CONNECTIONS FUNCTIONAL BLOCK DIAGRAM
ZO=50
ZO=50
ZS=50
NJG1308F
nAPPLICATION CIRCUIT1
nAPPLICATION CIRCUIT
NJG1308F
nAPPLICATION CIRCUIT
nAPPLICATION CIRCUIT
NJG1308F
nRECOMMENDED DESIGN
RFin
RFout
1308F
PCB:FR-4 22.5x20.0mm, t=0.5mm MICROSTRIP LINE WIDTH=1.0mm (Zo=50) CHIP SIZE:1608 Notes: Following chip capacitor should connected near each terminal bypass capacitor. Following chip capacitors necessary block bias. Chip parts list. Parts C1~C6 L1~L3 Comment MURATA GRM39 Series TAIYO-YUDEN HK1608 Series
NJG1308F
nPACKAGE OUTLINE (MTP6)
Lead material Lead surface finish Molding material UNIT Weight
Copper Solder plating Epoxy resin 14mg
Cautions using this product This product contains Gallium-Arsenide (GaAs) which harmful material. into mouth. dispose fire break this product. chemically make powder with this product. waste this product, please obey relating your country. This product damaged with electric static discharge (ESD) spike voltage. Please handle with care avoid these damages.
[CAUTION] specifications this databook only given information without guarantee regards either mistakes omissions. application circuits this databook described only show representative usages product intended guarantee permission right including industrial rights.

DRIVER-AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1308F GaAs MMI

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