POWER SEMICONDUCTOR Fast Switching Speed Surface Mount Package Id

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POWER SEMICONDUCTOR Fast Switching Speed Surface Mount Package Id

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BAS31
POWER SEMICONDUCTOR
Fast Switching Speed Surface Mount Package Ideally Suited Automatic Insertion General Purpose Switching Applications High Conductance
SOT-23
0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076
0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178
Mechanical Data
Case: SOT-23, Molded Plastic Terminals: Solderable MIL-STD-202, Method Polarity: Diagram Marking: Weight: 0.008 grams (approx.)
VIEW
Dimensions
Maximum Ratings 25°C unless otherwise specified
Characteristic Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage Blocking Voltage Reverse Voltage Forward Continuous Current (Note Average Rectified Output Current (Note Non-Repetitive Peak Forward Surge Current 1.0µs 1.0s Power Dissipation (Note Thermal Resistance Junction Ambient (Note Operating Storage Temperature Range Symbol VRRM VRWM VR(RMS) IFSM TSTG BAS31 +150 Unit
Electrical Characteristics
Characteristic Maximum Forward Voltage
25°C unless otherwise specified Symbol 0.62 0.72 0.855 1.25 Unit Test Condition 5.0mA 10mA 100mA 150mA 75V, 150°C 25V, 150°C 1.0MHz 10mA,
Maximum Peak Reverse Current Junction Capacitance Reverse Recovery Time Notes:
Valid provided that terminals kept ambient temperature.
DS11016 Rev.
BAS31
INSTANTANEOUS FORWARD CURRENT (mA)
1000
10,000
LEAKAGE CURRENT (nA)
1000
0.01 INSTANTANEOUS FORWARD VOLTAGE Fig. Forward Characteristics
JUNCTION TEMPERATURE (°C) Fig. Leakage Current Junction Temperature
DS11016 Rev.
BAS31

POWER SEMICONDUCTOR Fast Switching Speed Surface Mount Package Id

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