MECHANICAL DATA Dimensions (inches) 8.64 (0.34) 9.40 (0.37) 8.01
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2N6802 IRFF430
MECHANICAL DATA Dimensions (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
4.06 (0.16) 4.57 (0.18)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
5.08 (0.200) typ.
BVDSS ID(cont) RDS(on)
2.54 (0.100)
500V
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
FEATURES
AVALANCHE ENERGY RATED HERMETICALLY SEALED
DYNAMIC dv/dt RATING SIMPLE DRIVE REQUIREMENTS
TO39 Package (TO-205AF)
Underside View
Source
Gate
Drain
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
dv/dt Tstg Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
±20V (VGS Tcase 25°C) (VGS Tcase 100°C) 2.5A 1.5A 0.2W/°C 0.35mJ 3.5V/ns +150°C 5.0°C/W 175°C/W
Power Dissipation Tcase 25°C Linear Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery
Operating Storage Temperature Range Thermal Resistance Junction Case Thermal Resistance Junction-to-Ambient
Notes Pulse Test: Pulse Width 300µs, Peak 2.5A Starting 25°C 2.5A di/dt 75A/µs BVDSS 150°C SUGGESTED
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5357 Issue:
2N6802 IRFF430
ELECTRICAL CHARACTERISTICS (Tamb 25°C unless otherwise stated)
Parameter
BVDSS RDS(on) STATIC ELECTRICAL RATINGS Drain Source Breakdown Voltage Breakdown Voltage Static Drain Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Ciss Coss Crss td(on) td(off) Notes Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current
Test Conditions
-20V 1MHz 0.5BVDS 2.5A =2.5A 0.5BVDS 1.5A 2.5A 250µA 1.5A 0.8BVDSS 125°C
Min.
Typ.
Max.
Unit
BVDSS Temperature Coefficient
Reference 25°C
0.43 1.725 -100 19.8 29.5 19.7
VGS(th) Gate Threshold Voltage IDSS IGSS IGSS
2.5A 1.5A 2.5A
25°C 25°C Negligible
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
100A/µs
Pulse Test: Pulse Width 300µs, Repetitive Rating Pulse width limited maximum junction temperature.
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455) 556565. +44(0)1455) 552612. E-mail: sales@semelab.co.uk Website http://www.semelab.co.uk
Document Number 5357 Issue:
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