N-CHANNEL 500V 3.7A DPAK/IPAK PowerMeshII MOSFET TYPE STD4NC50 ST

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N-CHANNEL 500V 3.7A DPAK/IPAK PowerMeshII MOSFET TYPE STD4NC50 ST

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STD4NC50 STD4NC50-1
N-CHANNEL 500V 3.7A DPAK/IPAK PowerMeshII MOSFET
TYPE STD4NC50 STD4NC50-1
VDSS 500V 500V
RDS(on) <1.5 <1.5
3.7A 3.7A
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTION PowerMESHII evolution first generation MESH OVERLAYTM. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns swithing speed, gate charge ruggedness.
DPAK SUFFIX)
IPAK (SUFFIX"-1")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS SWITH MODE POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt(1) Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 14.8
(1)ISD 3.7A, di/dt 100A/µs, (BR)DSS, TJMAX.
Unit W/°C V/ns
width limited safe operating area
August 2001
STD4NC50/-1
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature Soldering Purpose °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±30V Min. ±100 Typ. Max. Unit
Symbol VGS(th) DS(on) Parameter Gate Threshold Voltage Static Drain-source Resistance Test Conditions VGS, 250µA 10V, Min. Typ. Max. Unit
DYNAMIC
Symbol
Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Test Conditions ID(on) RDS(on)max, 1.9A 25V, MHz,
Min.
Typ.
Max.
Unit
Coss Crss
STD4NC50/-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 250V, (see test circuit, Figure 400V, Min. Typ. 11.5 Max. Unit
SWITCHING
Symbol tr(Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions 400V, 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current 3.7A, 3.7A, di/dt 100A/µs, 100V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. 14.8 Unit
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area
Thermal Impedence
STD4NC50/-1
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STD4NC50/-1
Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
STD4NC50/-1
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STD4NC50/-1
TO-252 (DPAK) MECHANICAL DATA
DIM. MIN. 0.60
TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 1.00
inch MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.024
TYP.
MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35
0.039
P032P_B
STD4NC50/-1
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD4NC50/-1
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N-CHANNEL 500V 3.7A DPAK/IPAK PowerMeshII MOSFET TYPE STD4NC50 ST

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