FQPF6N90 900V N-Channel MOSFET These N-Channel enhancement m

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FQPF6N90 900V N-Channel MOSFET These N-Channel enhancement m

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FQPF6N90
FQPF6N90
900V N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulse avalanche commutation mode. These devices well suited high efficiency switch mode power supply.
Features
3.4A, 900V, RDS(on) @VGS gate charge typical Crss typical Fast switching 100% avalanche tested Improved dv/dt capability
TO-220F
FQPF Series
Absolute Maximum Ratings
Symbol VDSS VGSS dv/dt TSTG
25°C unless otherwise noted
Parameter Drain-Source Voltage Continuous 25°C) Drain Current Continuous 100°C) Drain Current Pulsed
(Note
FQPF6N90 13.6
(Note (Note (Note (Note
Units V/ns W/°C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation 25°C)
0.45 +150
Derate above 25°C Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
Thermal Characteristics
Symbol Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient -Max 2.25 62.5 Units °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
FQPF6N90
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
Characteristics
BVDSS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Referenced 25°C 125°C -0.96 -100 V/°C
Characteristics
VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VGS,
(Note
-1.5
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -1440 1880
Switching Characteristics
td(on) td(off) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
(Note
(Note
Drain-Source Diode Characteristics Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge A/µs
(Note
-400
13.6
Notes: Repetitive Rating Pulse width limited maximum junction temperature 116mH, 3.4A, 50V, Starting 25°C 5.8A, di/dt 200A/µs, BVDSS, Starting 25°C Pulse Test Pulse width 300µs, Duty cycle Essentially independent operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
FQPF6N90
Typical Characteristics
Drain Current
Drain Current
15.0 10.0 Bottom
Notes Pulse Test
Notes Pulse Test
VDS, Drain-Source Voltage
VGS, Gate-Source Voltage
Figure On-Region Characteristics
Figure Transfer Characteristics
Drain-Source On-Resistance
IDR, Reverse Drain Current
DS(ON)
Note
Notes Pulse Test
Drain Current
VSD, Source-Drain voltage
Figure On-Resistance Variation Drain Current Gate Voltage
Figure Body Diode Forward Voltage Variation Source Current Temperature
3000
Ciss (Cds shorted) Coss Crss
180V
2500
450V 720V
VGS, Gate-Source Voltage
2000
Ciss
Capacitance [pF]
1500
Coss
Notes
1000
Crss
Note 5.8A
VDS, Drain-Source Voltage
Total Gate Charge [nC]
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
FQPF6N90
Typical Characteristics
(Continued)
(Norm alized) Drain-Source Breakdown Voltage
Notes
RDS(ON) (Normalized) Drain-Source On-Resistance
Notes
-100
-100
Junction perature
Junction Temperature
Figure Breakdown Voltage Variation Temperature
Figure On-Resistance Variation Temperature
Operation This Area Limited DS(on)
Drain Current
Drain Current
Notes Single Pulse
VDS, Drain-Source Voltage
Case Temperature
Figure Maximum Safe Operating Area
Figure Maximum Drain Current Case Temperature
(t),
otes
Figure Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
FQPF6N90
Gate Charge Test Circuit Waveform
200nF 300nF
Same Type
Charge
Resistive Switching Test Circuit Waveforms
td(on)
td(off)
Unclamped Inductive Switching Test Circuit Waveforms
BVDSS IAS2 BVDSS BVDSS
Time
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
FQPF6N90
Peak Diode Recovery dv/dt Test Circuit Waveforms
Driver
Same Type
dv/dt controlled controlled pulse period
Driver
Gate Pulse Width -Gate Pulse Period
Body Diode Forward Current
di/dt
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode Forward Voltage Drop
©2002 Fairchild Semiconductor Corporation
Rev. December 2002
FQPF6N90
Package Dimensions
TO-220F
3.30 ±0.10 10.16 ±0.20 (7.00) ±0.10 2.54 ±0.20 (0.70)
6.68 ±0.20
15.80 ±0.20
(1.00x45°)
MAX1.47 9.75 ±0.30 0.80 ±0.10
0.35 ±0.10 2.54TYP [2.54 ±0.20]
0.50 -0.05 2.54TYP [2.54 ±0.20] 4.70 ±0.20
+0.10
2.76 ±0.20
9.40 ±0.20
Dimensions Millimeters
©2002 Fairchild Semiconductor Corporation Rev. December 2002
15.87 ±0.20
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
ACExFACTActiveArrayFACT Quiet seriesBottomlessFAST® board. Around world.The Power FranchiseProgrammable Active DroopDISCLAIMER
OPTOPLANAR
PACMANPOPPower247PowerTrench® QFETQSQT OptoelectronicsQuiet SWITCHER® SMART START
SPMStealthSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 VCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
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FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices systems critical component component life support which, intended surgical implant into body, device system whose failure perform support sustain life, whose failure perform reasonably expected cause failure life support when properly used accordance with instructions device system, affect safety effectiveness. provided labeling, reasonably expected result significant injury user.
PRODUCT STATUS DEFINITIONS Definition Terms
Datasheet Identification Advance Information Product Status Formative Design First Production Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
Preliminary
Identification Needed
Full Production
Obsolete
Production
©2002 Fairchild Semiconductor Corporation
Rev.

FQPF6N90 900V N-Channel MOSFET These N-Channel enhancement m

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