N-CHANNEL 0.0085 TO-247 STripFETPOWER MOSFET TYPE STW80NE06-10
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STW80NE06-10
N-CHANNEL 0.0085 TO-247 STripFETPOWER MOSFET
TYPE STW80NE06-10
VDSS
RDS(on) 0.01
A(*)
TYPICAL RDS(on) 0.0085 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
TO-247 DESCRIPTION This Power MOSFET latest development STMicroelectronics unique "Single Feature Size" strip-based process. resulting transistor shows extremely high packing density on-resistance, rugged avalanche characteristics less critical alignment steps therefore remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS DC-DC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS SOLENOID RELAY DRIVERS AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDGR PTOT dv/dt Tstg Parameter Drain-source Voltage (VGS Drain-gate Voltage (RGS Gate- source Voltage Drain Current (continuos) 25°C Drain Current (continuos) 100°C Drain Current (pulsed) Total Dissipation 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 1.66
80A, di/dt 300A/µs, (BR)DSS, TJMAX. Current limited package
Unit W/°C V/ns
Pulse width limi safe operating area
October 2000
STW80NE06-10
THERMAL DATA
Rthj-case Rthj-amb Rthj-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose °C/W °C/W °C/W
AVALANCHE CHARACTERISTICS
Symbol Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting IAR, Value Unit
ELECTRICAL CHARACTERISTICS (TCASE UNLESS OTHERWISE SPECIFIED)
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-body Leakage Current (VDS Test Conditions Rating Rating, ±20V Min. ±100 Typ. Max. Unit
Symbol VGS(th) DS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source Resistance State Drain Current Test Conditions VGS, 250µA 10V, ID(on) RDS(on)max, Min. Typ. 0.0085 Max. 0.01 Unit
DYNAMIC
Symbol Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions ID(on) RDS(on)max, 25V, MHz, Min. Typ. 7600 Max. Unit
STW80NE06-10
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING
Symbol td(on) Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions 30V, (see test circuit, Figure 48V, 40A, Min. Typ. Max. Unit
SWITCHING
Symbol td(off) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Condit ions 4.7, (see test circuit, Figure Min. Typ. Max. Unit
SOURCE DRAIN DIODE
Symbol ISDM Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time 80A, 80A, di/dt 100A/µs, 50V, 150°C (see test circuit, Figure Test Conditions Min. Typ. Max. Unit
IRRM
Reverse Recovery Charge Reverse Recovery Current
Note: Pulsed: Pulse duration duty cycle Pulse width limited safe operating area.
Safe Operating Area
Thermal Impedence
STW80NE06-10
Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source Resistance
Gate Charge Gate-source Voltage
Capacitance Variations
STW80NE06-10
Normalized Gate Thereshold Voltage Temp. Normalized Resistance Temperature
Source-drain Diode Forward Characteristics
Normalized Drain-Source Breakdown Temperature
STW80NE06-10
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuit Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STW80NE06-10
TO-247 MECHANICAL DATA
DIM. MIN. 15.3 19.7 14.2 34.6 0.079 10.9 15.9 20.3 14.8 0.602 0.776 0.559 1.362 0.217 0.118 TYP. MAX. MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.429 0.626 0.779 0.582 inch TYP. MAX. 0.209 0.102 0.031 0.055 0.094 0.134
P025P
STW80NE06-10
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