Silicon Transistor General small signal amplifier Features

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Silicon Transistor General small signal amplifier Features

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2SA1980
Silicon Transistor
General small signal amplifier
Features
collector saturation voltage VCE(sat)=-0.3V(Max.) output capacitance Cob=4pF(Typ.) Complementary pair with 2SC5343
Ordering Information
Type 2SA1980 Marking A1980 Package Code TO-92
Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1
unit
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ. 2.54 Typ.
1.20±0.1
0.38
Connections Emitter Collector Base
KST-9002-002
2SA1980
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO Tstg
Ratings
-150 -55~150
Unit
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO
Test Condition
IC=-100µA, IE=0 IC=-10mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA f=1KHz, Rg=10K
Min. Typ. Max.
-0.1 -0.1 -0.3
Unit
VCE(sat)
rank 70~140, 120~240, 200~400, 300~700.
KST-9002-002
2SA1980
Electrical Characteristic Curves
Fig. PC-Ta Fig. IC-VBE
Fig. IC-VCE
Fig. hFE-IC
Fig. VCE(sat)-IC
KST-9002-002

Silicon Transistor General small signal amplifier Features

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