MECHANICAL DATA Dimensions (inches) 8.64 (0.34) 9.40 (0.37) 8.01
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2N6849
MECHANICAL DATA Dimensions (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
P-CHANNEL POWER MOSFETs VDSS ID(cont) RDS(on)
FEATURES
4.06 (0.16) 4.57 (0.18)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
5.08 (0.200) typ.
100V 6.5A 0.30
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
2.54 (0.100)
Single pulse avalanche energy rated TO-39 METAL PACKAGE (TO-205AF)
Underside View Source Gate Drain
power dissipation limited Nanosecond switching speeds Linear transfer characteristics High input impedance
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
TSTG Gate Source Voltage* Drain Source Voltage* Drain Gate Voltage (RGS 20k)* Continuous Drain Current TCase 25°C* TCase 100°C* Pulsed Drain Current2* Single Pulse Avalanche Current3 Power Dissipation TCase 25°C* Linear Derating Factor* Operating Storage Junction Temperature Range* Thermal Resistance Junction Case* Thermal Resistance Junction Ambient ±20V -100V -100V -6.5A -4.1A -25A 500mJ 0.2W/°C +150°C 5°C/W 175°C/W
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3098 Issue
2N6849
ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated)
Parameter
BVDSS RDS(on) STATIC ELECTRICAL RATINGS Drain Source Breakdown Voltage* Static Drain Source On-State Resistance Forward Gate Source Leakage Reverse Gate Source Leakage Zero Gate Voltage Drain Current*
Test Conditions
-10V rating -10V -15V -125°C 6.5A 4.1A ID(on)RDS(on)max. -1mA 4.1A 0.25mA
Min.
-100
Typ.
Max.
Unit
0.30* -100 -250 -6.5
VGS(th) Gate Threshold Voltage* IGSS IGSS IDSS
VDS(on) On-State Drain Voltage1 Ciss Coss Crss td(on) td(off) Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Rating
4.1A
SOURCE DRAIN DIODE CHARACTERISTICS Continous Source Current* Pulse Source Current |(Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Diode)2
Modified MOSFETSymbol showing integralreverse Junction rectifier.
-4.7 negligible
6.5A
6.5A 25°C -50V 25°C
diF/dt A/µs
*JEDEC Registered Value Pulse Test: Pulse Width 300µs, duty cycle Repetitive Rating: Pulse width limited max. junction temperature starting 25.°C, L=17.25mH, Peak 6.5A
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3098 Issue
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