MECHANICAL DATA Dimensions (inches) 8.64 (0.34) 9.40 (0.37) 8.01
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2N6845 IRFF9120
MECHANICAL DATA Dimensions (inches)
8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355)
4.06 (0.16) 4.57 (0.18)
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
5.08 (0.200) typ.
VDSS ID(cont) RDS(on)
2.54 (0.100)
-100V -4.0A 0.60
FEATURES
HERMETICALLY SEALED TO-39 METAL PACKAGE SIMPLE DRIVE REQUIREMENTS LIGHTWEIGHT
0.74 (0.029) 1.14 (0.045)
0.71 (0.028) 0.53 (0.021)
SCREENING OPTIONS AVAILABLE
Drain
TO-39 (TO-205AF) METAL PACKAGE
PIN1 Source Gate
ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated)
Tstg Gate Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Power Dissipation Tcase 25°C Linear Derating Factor Operating Storage Temperature Range Package Mounting Surface Temperature (for sec) Thermal Resistance Junction Case (VGS Tcase 25°C) (VGS Tcase 100°C) ±20V -4.0A -2.6A -16A 0.16 W/°C 150°C 300°C 6.25°C/W
Notes Repetitive Rating Pulse width limited maximum junction temperature.
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5748 Issue
2N6845 IRFF9120
ELECTRICAL CHARACTERISTICS (Tamb 25°C unless otherwise stated)
Parameter
BVDSS RDS(on) STATIC ELECTRICAL RATINGS Drain Source Breakdown Voltage Breakdown Voltage Static Drain Source On-State Resistance
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS Temperature Coefficient
Reference 25°C 2.6A 4.0A -250µA -2.6A 125°C -20V 1MHz -10V -50V -50V 4.0A -4.0A 1.25
0.10 0.60 0.69 -250 -100 16.3
VGS(th) Gate Threshold Voltage IDSS IGSS IGSS Ciss Coss Crss td(on) td(off) Forward Transconductance
-15V
Drain-to-Source Leakage Current Forward Gate Source Leakage Reverse Gate Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
SOURCE DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage1 Reverse Recovery Time1 Reverse Recovery Charge1 Forward Turn-On Time
Mosfet symbol showing
Negligible
integral reverse junction diode
4.0A -4.0A
25°C 25°C
-100A/µs -50V
Notes Pulse Test: Pulse Width 300ms,
Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 5748 Issue
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