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MECHANICAL DATA Dimensions (inches) 8.64 (0.34) 9.40 (0.37) 8.01
Top Searches for this datasheet2N6788 IRFF120 MECHANICAL DATA Dimensions (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) N-CHANNEL POWER MOSFET ENHANCEMENT MODE 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. FEATURES AVALANCHE ENERGY RATING SIMPLE DRIVE REQUIREMENTS 5.08 (0.200) typ. HERMETICALLY SEALED 2.54 (0.100) 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) APPLICATIONS FAST SWITCHING MOTOR CONTROLS POWER SUPPLIES Drain Case TO39 Package (TO-205AF) Source Underside View Gate ABSOLUTE MAXIMUM RATINGS (Tcase 25°C unless otherwise stated) @Tcase 25°C @Tcase 100°C Tcase 25°C RJ-C RJ-A TJ,Tstg Lead Temperature Drain Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Gate Source Voltage Maximum Power Dissipation Thermal Resistance Junction Case Thermal Resistance Junction Ambient Operating Storage Temperature Range from case secs) 100V 6.0A 3.5A ±20V 6.25°C/W 175°C/W +150°C 300°C Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders. Semelab plc. Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5513 Issue 2N6788 IRFF120 ELECTRICAL CHARACTERISTICS (Tcase 25°C unless otherwise stated) Parameter STATIC ELECTRICAL RATINGS BVDSS Drain Source Breakdown Voltage VGS(th)* Gate Threshold Voltage IGSSF IGSSR IDSS Gate Body Leakage Forward Gate Body Leakage Reverse Zero Gate Voltage Drain Current -20V 80V. 1MHz 6.0A 125°C 3.5A 6.0A 3.5A Test Conditions 1.0mA 250µA Min. Typ. Max. Unit -100 0.30 0.345 RDS(on)* Static Drain Source On-State Resistance gfs* Ciss Coss Crss td(on) td(off) Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain ("Miller") Charge (MOSFET switching times essentially independent operating temperature.) 6.0A BODY- DRAIN DIODE RATINGS CHARACTERISTICS Modified POWER Continuous Source Current (Body Diode) Source Current (Body Diode) Diode Forward Voltage* Reverse Recovery Time Reverse Recovery Charge symbol showing intergal junction rectifier. 6.0A 25°C 6.0A 25°C 100A/µs Notes Pulse Test: Pulse Width 300µs, Semelab reserves right change test conditions, parameter limits package dimensions without notice. Information furnished Semelab believed both accurate reliable time going press. However Semelab assumes responsibility errors omissions discovered use. Semelab encourages customers verify that datasheets current before placing orders. Semelab plc. Telephone +44(0)1455 556565. +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5513 Issue Other recent searchesTCST1000 - TCST1000 TCST1000 Datasheet TCST2000 - TCST2000 TCST2000 Datasheet SC250NR - SC250NR SC250NR Datasheet PRMG251 - PRMG251 PRMG251 Datasheet PRMG256 - PRMG256 PRMG256 Datasheet MX29GL512E - MX29GL512E MX29GL512E Datasheet M54522P - M54522P M54522P Datasheet M54522P - M54522P M54522P Datasheet FPNPN8 - FPNPN8 FPNPN8 Datasheet ITR20002 - ITR20002 ITR20002 Datasheet HT600 - HT600 HT600 Datasheet HA0069E - HA0069E HA0069E Datasheet GPCH8001A - GPCH8001A GPCH8001A Datasheet AM2520EG - AM2520EG AM2520EG Datasheet
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