Process Parameters Technology outline Standard control logic tran

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Process Parameters Technology outline Standard control logic tran

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5V/40V Analog CMOS
Process Parameters Technology outline
Standard control logic transistors wafers Thick gate oxide State double metal technology [Ti/TiN/Al/TiN sandwich] Single double poly Hi-res poly option [10k/ High voltage capacitors available Poly pitch [width/space] Metal pitch [width/space] Metal pitch [width/space] Contact size size N-well junction depth junction depth junction depth Gate oxide thickness Inter poly oxide nitride thickness 2.0/2.5µm 2.0/2.0µm 0.8/2.4µm 2.0µm 2.4µm 5.5µm 0.5µm 0.55µm
Mitel's volt process full stepper only, micron drawn, silicon-gate, N-Well, double metal only, single double poly, epitaxial silicon, volt CMOS process with High Resistivity Polysilicon option (HiRes). designed applications which need combine voltage high voltage (40V max) analog digital functions single chip. Enhancement channel transistors used. process incorporates both NMOS PMOS devices able operate volts allowing designer utilize proven complementary design techniques even high voltage functions. benefits safer design, less power dissipation less chip area compared non-complementary designs. technology (uncommon volt processes) helps further improve packing density. Note that only channel length high voltage NMOS PMOS devices need drawn with feature sizes greater than those typical micron technologies.
Ring Oscillators
Structure Fanout [N/P] 2µm] Single Extended [NE/PE] Double extended [NEE/PEE] Typical Value 2200 1150 2000 Units Conditions ps/stage Volts ps/stage Volts ps/stage Volts
Bromont, Canada 1-800-718-9701 Registered 9001, ISO14000
Electrical Parameters
PARAMETER DESCRIPTION Threshold Voltages channel (50umX2um) channel ext. (112umX9um) channel double ext. (100umX10um) channel (50umX2um) channel ext. (100umX5um) channel double ext. (100umX6um) Drive Currents channel (50umX2um) channel ext. (112umX9um) channel double ext. (100umX10um) channel (50umX2um) channel ext. (100umX5um) channel double ext. (100umX6um) Breakdown Voltages channel (50umX2um) channel ext. (112umX9um) channel double ext. (100umX9um) channel (50umX2um) channel ext. (100umX5um) channel double ext. (100umX7um) N+P- diode P+N- diode Poly1/Field Threshold Voltages channel channel Metal1/Field Threshold Voltages channel channel Sheet Resistances Well Extended Extended Poly Gate Poly Poly High Metal Metal SYMBOL 50X2 112E9 VTN100D10 50X2 100E5 100D6 50X2 IDLN 112E9 IDLN100D10 50X2 IDLP 100E5 IDLP 100D6 50X2 112E9 100D10 50X2 100E5 100D6 N+PBRD P+NVTIFN VTIFP VTFN VTFP Well Diff Diff Next Pext POLY POLY POLY METAL METAL 1.00 1.00 1.00 1.35 1.35 1.35 1.25 1.25 1.25 1.60 1.60 1.60 11.5 1.50 1.50 1.50 1.85 1.85 1.85 UNITS
Bromont, Canada 1-800-718-9701 Registered 9001, ISO14000
Cross Sections
NMOS
Poly Gate
PolY Gate
PMOS
N-Well
Single Extended NMOS (NE)
Poly Gate N-Ext.
Single Extended PMOS (PE)
Poly Gate P-Ext.
P-EPI
N-Well
Double Extended NMOS (NEE)
Poly Gate N-Ext. N-Ext.
Double Extended PMOS (PEE)
PolY Gate P-Ext. P-Ext.
P-EPI
N-Well
Bromont, Canada 1-800-718-9701 Registered 9001, ISO14000
SPICE Parameters [example]
DOUBLE EXTENDED PMOS (room temperature)
Bromont, Canada 1-800-718-9701 Registered 9001, ISO14000
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