Silicon epitaxial planer transistor 0.425 1.25±0.1 0.425 0.2

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Silicon epitaxial planer transistor 0.425 1.25±0.1 0.425 0.2

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XP06534 (XP6534)
Silicon epitaxial planer transistor
0.425 1.25±0.1 0.425
0.2±0.05
high-frequency amplification
2.1±0.1
0.65
elements incorporated into package. Reduction mounting area assembly cost half.
2.0±0.1
Features
0.65
0.9±0.1
2SC2404 elements
0.7±0.1
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Rating Collector emitter voltage element Emitter base voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
(Ta=25°C)
Ratings +150 Unit
Emitter (Tr1) Emitter (Tr2) Base (Tr2)
Collector (Tr2) Base (Tr1) Collector (Tr1) EIAJ SC-88 S-Mini Type Package (6-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector base voltage Emitter base voltage Forward current transfer ratio Forward current transfer ratio Base emitter voltage Common emitter reverse transfer capacitance Transition frequency Noise figure Power gain
(Ta=25°C)
Symbol VCBO VEBO (small/large)*1 Conditions 10µA, 10µA, -1mA -1mA -1mA -1mA, 10.7MHz -1mA, 200MHz -1mA, 100MHz -1mA, 100MHz 0.99 Unit
Ratio between elements
Note.) Part number Parenthesis shows conventional part number.
0.12 -0.02
Basic Part Number Element
+0.05
XP06534
Ta=25°C IB=100µA
VCE=6V Ta=25°C
Total power dissipation (mW)
Collector current (mA)
80µA
Collector current (mA)
60µA 40µA 20µA
Ambient temperature (°C)
Collector emitter voltage
Base current (µA)
VCE(sat)
Collector emitter saturation voltage VCE(sat)
VCE=6V IC/IB=10
VCE=6V
25°C Ta=75°C -25°C
25°C 0.03 0.01 Ta=75°C -25°C
Forward current transfer ratio
Collector current (mA)
Ta=75°C 25°C -25°C
Base emitter voltage
Collector current (mA)
Collector current (mA)
1200
Common emitter reverse transfer capacitance (pF)
VCB=6V f=2MHz Ta=25°C IC=1mA f=10.7MHz Ta=25°C
Reverse transfer impedance
VCB=6V Ta=25°C
Transition frequency (MHz)
1000
-0.1 -0.3
-100
-0.1
-0.3
Emitter current (mA)
Emitter current (mA)
Collector emitter voltage
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2001

Silicon epitaxial planer transistor 0.425 1.25±0.1 0.425 0.2

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