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Silicon epitaxial planer transistor 0.425 1.25±0.1 0.425 0.2
Top Searches for this datasheetXP06501 (XP6501) Silicon epitaxial planer transistor 0.425 1.25±0.1 0.425 0.2±0.05 general amplification 2.1±0.1 0.65 elements incorporated into package. Reduction mounting area assembly cost half. 2.0±0.1 Features 0.65 0.9±0.1 2SD0601A(2SD601A) elements 0.7±0.1 0.2±0.1 Absolute Maximum Ratings Parameter Collector base voltage Collector emitter voltage Rating Emitter base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg (Ta=25°C) Ratings +150 Unit Emitter (Tr1) Emitter (Tr2) Base (Tr2) Collector (Tr2) Base (Tr1) Collector (Tr1) EIAJ SC-88 S-Mini Type Package (6-pin) Marking Symbol: Internal Connection Electrical Characteristics Parameter Collector base voltage Collector emitter voltage Emitter base voltage Collector cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol VCBO VCEO VEBO ICBO ICEO (small/large)*1 VCE(sat) Conditions 10µA, 2mA, 10µA, 20V, 10V, 10V, 10V, 100mA, 10mA 10V, -2mA, 200MHz 10V, 1MHz 0.99 Unit Ratio between elements Note.) Part number Parenthesis shows conventional part number. 0.12 -0.02 Basic Part Number Element +0.05 Ta=25°C IB=160µA XP06501 1200 VCE=10V Ta=25°C 1000 Total power dissipation (mW) Collector current (mA) Base current (µA) 140µA 120µA 100µA 80µA 60µA 40µA 20µA Ambient temperature (°C) Collector emitter voltage Base emitter voltage VCE=10V VCE=10V Ta=25°C VCE(sat) Collector emitter saturation voltage VCE(sat) IC/IB=10 0.03 0.01 25°C Ta=75°C Collector current (mA) Collector current (mA) Ta=75°C 25°C -25°C -25°C 1000 Base emitter voltage Base current (µA) Collector current (mA) VCE=10V VCB=10V Ta=25°C VCE=10V GV=80dB Function=FLAT Ta=25°C Forward current transfer ratio Transition frequency (MHz) Ta=75°C 25°C Noise voltage (mV) -25°C Rg=100k 4.7k -0.1 -0.3 -100 1000 Collector current (mA) Emitter current (mA) Collector current (µA) Request your special attention precautions using technical information semiconductors described this material export permit needs obtained from competent authorities Japanese Government products technologies described this material controlled under "Foreign Exchange Foreign Trade Law" exported taken Japan. technical information described this material limited showing representative characteristics applied circuit examples products. does constitute warranting industrial property, granting relative rights, granting license. products described this material intended used standard applications general electronic equipment (such office equipment, communications equipment, measuring instruments household appliances). 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