Data Sheet PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE

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Data Sheet PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE

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Data Sheet PD-6.058D
IR51H214
SELF-OSCILLATING HALF-BRIDGE
Features
Product Summary
(max) Duty Cycle Deadtime RDS(on) 250V 1.2µs 2.0W
Output Power MOSFETs half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed bootstrap operation Accurate timing control both Power MOSFETs Matched delay duty cycle Matched deadtime 1.2us Internal oscillator with programmable frequency Zener clamped offline operation Half-bridge output phase with
Description
IR51H214 high voltage, high speed, selfoscillating half-bridge. Proprietary HVIC latch immune CMOS technologies, along with HEXFET® power MOSFET technology, enable ruggedized single package construction. front-end features programmable oscillator which functions similar CMOS timer. supply control circuit zener clamp simplify offline operation. output features HEXFETs half-bridge configuration with internally deadtime designed minimum cross-conduction half-bridge. Propagation delays high side power MOSFETs matched simplify duty cycle applications. device operate volts.
Package
IR51H214 9506
Typical Connection
250V
Order
IR51H214
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage device occur. voltage parameters absolute voltages referenced COM, currents defined positive into lead. Thermal Resistance Power Dissipation ratings measured under board mounted still conditions.
Symbol
dv/dt
Parameter Definition
High Voltage Supply High Side Floating Supply Absolute Voltage Half-Bridge Output Voltage Voltage Voltage Supply Current (Note Output Current Peak Diode Recovery dv/dt Package Power Dissipation Thermal Resistance, Junction Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, seconds)
Min.
-0.3 -0.3 -0.3 -0.3 -0.3
Max.
2.00
Units
V/ns
Recommended Operating Conditions
Input/Output logic timing diagram shown Figure proper operation device should used within recommended conditions.
Symbol
Note
Parameter Definition
High Side Floating Supply Absolute Voltage High Voltage Supply Half-Bridge Output Voltage Continuous Drain Current Supply Current (Note Ambient Temperature
Min.
Max.
VCLAMP 0.85 0.55
Units
Because IR51H214's application specificity toward off-line supply systems, this contains zener clamp structure between chip which nominal breakdown voltage 15.6V. Therefore, supply voltage normally derived current feeding lead (typically means high value resistor connected between chip rectified line voltage local decoupling capacitor from COM) allowing internal zener clamp circuit determine nominal supply voltage. Therefore, this circuit should driven impedance power source greater than VCLAMP.
Order
IR51H214
Dynamic Electrical Characteristics
VBIAS (VCC, unless otherwise specified.
Symbol
Parameter Definition
Reverse Recovery Time (MOSFET Body Diode) Reverse Recovery Charge (MOSFET Body Diode) Deadtime, Turn-Off Turn-On Turn-Off Turn-On Duty Cycle
Min. Typ. Max. Units
-190 0.64
Test Conditions
850mA di/dt 100A/µs
Static Electrical Characteristics
VBIAS (VCC, unless otherwise specified.
Symbol
Parameter Definition
Min. Typ. Max. Units
-8.4 15.6
Test Conditions
Supply Characteristics VCCUV+ Supply Undervoltage Positive Going Threshold VCCUV- Supply Undervoltage Negative Going Threshold IQCC Quiescent Supply Current VCLAMP Zener Shunt Clamp Voltage Floating Supply Characteristics IQBS Quiescent Supply Current Offset Supply Leakage Current-Oscillator Characteristics Oscillator Frequency
250V
-kHz -1.0 2.5V
35.7 7.04
VCCUV+ -100 2.5V VCCUV+
VCTUV VRT+ VRT-
Input Current Undervoltage Lockout High Level Output Voltage, Level Output Voltage
VRTUV Undervoltage Lockout, VCT+ Threshold VCT1/3 Threshold Output Characteristics RDS(on) Static Drain-to-Source On-Resistance Diode Forward Voltage -0.8
0.001 -200 -200 -100 -8.0 -4.0 -2.0
850mA
Order
IR51H214
Functional Block Diagram
Lead Definitions
Lead Symbol
Description
Logic internal gate drive supply voltage. internal zener clamp diode 15.6 nominal included allow current directly from typically means high value resistor. Oscillator timing resistor input; resistor connected from phase with half-bridge output (VO). Oscillator timing capacitor output; capacitor connected from order program oscillator frequency according following equation:
where effective impedance output stage. High side gate drive floating supply. bootstrap operation high voltage fast recovery diode needed feed from High voltage supply. Half-bridge output. Logic side half-bridge return.
Order
IR51H214
Lead Assignments
Lead Leads
IR51H214
VCCUV+
VCLAMP
HIGH SIDE SIDE
Figure Input/Output Timing Diagram
Figure Deadtime Waveform Definitions
Order
IR51H214
Package Outline
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: (K&H Bldg.), 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com
Sales Offices, Agents Distributors Major Cities Throughout World.
Data specifications subject change without notice.
1996 International Rectifier Printed U.S.A. 3-96
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Data Sheet PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE

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