These N-Channel enhancement mode power field effect transistors produc

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These N-Channel enhancement mode power field effect transistors produc

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NDP7060 NDB7060 N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
Features
75A, 60V. RDS(ON) 0.013 VGS=10V. Critical electrical parameters specified elevated temperature. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
25°C unless otherwise noted
NDP7060
NDB7060
Units
Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Pulsed
Maximum Power Dissipation 25°C Derate above 25°C
W/°C
TJ,TSTG
Operating Storage Temperature Range Maximum lead temperature soldering purposes, 1/8" from case seconds
1997 Fairchild Semiconductor Corporation
NDP7060.SAM
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE AVALANCHE RATINGS (Note BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 125°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VGS, 125°C Static Drain-Source On-Resistance 125°C On-State Drain Current Forward Transconductance 37.5 0.01 0.015 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.013 0.024
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
2960 1130
3600 1600
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN 14.5
NDP7060.SAM
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted)
Conditions
Units
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 37.5 (Note 125°C Reverse Recovery Time Reverse Recovery Current dIF/dt A/µs 0.84
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
Note: Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP7060.SAM
Typical Electrical Characteristics
=20V
DRAIN-SOURCE CURRENT
DS(on), NORMALIZED
5.0V
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics
Figure On-Resistance Variation with Gate Voltage Drain Current
DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
125°C
DS(ON), NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature
Figure On-Resistance Variation with Drain Current Temperature
GATE-SOURCE THRESHOLD VOLTAGE
DRAIN CURRENT GS(th) NORMALIZED
250µA
-55°C
125°C 25°C
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics
Figure Gate Threshold Variation with Temperature
NDP7060.SAM
Typical Electrical Characteristics (continued)
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE
250µA
REVERSE DRAIN CURRENT
NORMALIZED
125°C
1.05
25°C -55°C
0.95
0.01
JUNCTION TEMPERATURE (°C)
0.001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature
Figure Body Diode Forward Voltage Variation with Current Temperature
5000
GATE-SOURCE VOLTAGE
3000 2000 CAPACITANCE (pF)
Ciss
1000
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics
Figure Gate Charge Characteristics
d(on)
d(off)
INVERTED
PULSE IDTH
Figure Switching Test Circuit
Figure Switching Waveforms
NDP7060.SAM
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
-55°C
DRAIN CURRENT
DS(O
25°C
125°C
SINGLE PULSE 25°C
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE
Figure Transconductance Variation with Drain Current Temperature
Figure Maximum Safe Operating Area
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) °C/W
0.05 P(pk)
0.05 0.03 0.02 0.01 0.01
0.02 0.01 Single Pulse
Duty Cycle, ,TIME (ms) 1000
0.05
Figure Transient Thermal Response Curve
NDP7060.SAM
TO-220 Tape Reel Data Package Dimensions
TO-220 Tube Packing Configuration: Figur
Packaging Description:
TO-220 parts ship normally tube. tube made plastic treated with anti -stati agent.These tubes standard option placed inside dissipative plastic bag, barcode labeled, placed inside made recyclable corrugated per. contains maximum (see fig. 1.0). several these boxes placed inside labeled shipp whic omes different sizes dependi mber parts ship ped. other option comes bulk described Packagin Information table. unit this option placed inside small laid antistatic bubble sheet. These smaller boxes individually labeled placed larger (see fig. 3.0). These larger intermediate boxes then will placed finally inside labeled shipping whic still comes different sizes depending number units shipped.
unit Tube
Tubes
Conduct Plasti
530mm 130mm 83mm Intermediate
TO-220 Packaging Information: Figure
TO-220 Packaging Information Packaging Option Packaging type Tube/Box Dimension (mm) Weight unit (gm) Note/Comments Standard
code
FSCINT Labe samp
FAIRCHILD SEMICONDUCTOR CORPORATION
1080 maxi quant
S62Z BULK
LOT:
CBVK741B019
QTY:
HTB:B 1080
NSID:
FDP7060
SPEC:
Rail/Tube 530x130x83 1,080 1.4378
D/C1:
D9842
SPEC REV: REV:
114x102x51 1,500 1.4378
FSCINT Label
(FSCINT)
TO-220 bulk Packing Configuration: Figure
FSCINT Label ti-stati Bubbl Sheet 530mm 130mm 83mm Intermediate
1500 maxi quant intermediate units EO70 114mm 102mm 51mm EO70 Immed iate EO70 boxe Interm ediate
FSCINT Label
TO-220 Tube Configuration: Figure
Note: ensions inches
0.123 +0.001 -0.003
0.165 0.080 0.450 ±.030 1.300 ±.015 0.032 ±.003 0.275
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
9852 NDP4060L
0.160
20.000 +0.031 -0.065
0.800 0.275
August 1999, Rev.
TO-220 Tape Reel Data Package Dimensions, continued
TO-220 Code
Scale letter size paper
Dimensions shown below inches [millimeters]
Part Weight unit (gram): 1.4378
September 1998, Rev.
TO-263AB/D2PAK Tape Reel Data Package Dimensions
TO-263AB/D2PAK Packaging Configuration: Figure
Packaging Description:
ROST DEVICES
ROST ADIO
NUMB PEEL STREN _gms
Antistatic Cover Tape
Label
TO-263/D2PAK parts shipped tape. carrier tape made from dissipative (carbon filled) polycarbonate resin. cover tape multilayer film (Heat Activated Adhesive nature) primarily composed polyester film, adhesive layer, sealant, anti-static sprayed agent. These reeled parts standard option shipped with units 330cm diameter reel. reels dark blue color made polystyrene plastic (antistatic coated). This some other options further described Packaging Information table. These full reels individually barcode labeled, packed, placed inside standard intermediate (illustrated figure 1.0) made recyclable corrugated brown paper. contains reel maximum. these boxes placed inside barcode labeled shipping which comes different sizes depending number parts shipped.
CAUTION
Static Dissipative Embossed Carrier Tape Moisture Sensitive Label F63TNR Label Customized Label
TO-263AB/D2PAK Packaging Information Packaging Option Packaging type Reel/Tube/Bag Reel Size Dimension (mm) Weight unit (gm) Weight Reel Note/Comments Standard flow code) 359x359x57 1.4378 1.6050 L86Z Rail/Tube 530x130x83 1,080 1.4378
TO-263AB/D2PAK Unit Orientation
359mm 359mm 57mm Standard Intermediate Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019 FSID: FDB6320L QTY: SPEC:
DRYPACK
(F63TNR)3
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F:
TO-263AB/D2PAK Tape Leader Trailer Configuration: Figure
Carrier Tape Cover Tape
Components Trailer Tape 400mm minimum empty pockets Leader Tape 1520mm minimum empty pockets
September 1999, Rev.
F9835 FDB603AL
F9835 FDB603AL
F9835 FDB603AL
F9835 FDB603AL
Moisture Sensitive Label
TO-263AB/D2PAK Tape Reel Data Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape Configuration: Figure
User Direction Feed
Dimensions millimeter type TO263AB/ D2PAK (24mm)
10.60 +/-0.10
15.80 +/-0.10
24.0 +/-0.3
1.55 +/-0.05
1.60 +/-0.10
1.75 +/-0.10
22.25
11.50 +/-0.10
16.0 +/-0.1
+/-0.1
4.90 +/-0.10
0.450 +/-0.150
21.0 +/-0.3
0.06 +/-0.02
Notes: dimensions determined with respect EIA/Jedec RS-481 rotational lateral movement requirements (see sketches
maximum Typical component cavity center line
0.9mm maximum
maximum component rotation
0.9mm maximum
Sketch (Side Front Sectional View)
Component Rotation
Sketch (Top View)
Typical component center line
Sketch (Top View)
Component lateral movement
TO-263AB/D Figure
2PAK
Reel Configuration:
Component Rotation
Measured
DETAIL detail
Diameter Option
Measured
Dimensions inches millimeters
Tape Size
24mm
Reel Option
13.00
0.059
+0.020/-0.008 +0.5/-0.2
0.795 20.2
4.00
0.961 +0.078/-0.000 24.4 +2/0
1.197 30.4
(LSL-USL)
0.941 0.1.079 23.9 27.4
August 1999, Rev.
TO-263AB/D2PAK Tape Reel Data Package Dimensions, continued
TO-263AB/D2PAK Code
Scale letter size paper
Dimensions shown below inches [millimeters]
Part Weight unit (gram): 1.4378
August 1998, Rev.
TRADEMARKS
following registered unregistered trademarks Fairchild Semiconductor owns authorized intended exhaustive list such trademarks.
Quiet SeriesFAST® FASTrGTOHiSeCDISCLAIMER
QFETQSQuiet SeriesSuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTinyLogicUHCVCX
FAIRCHILD SEMICONDUCTOR RESERVES RIGHT MAKE CHANGES WITHOUT FURTHER NOTICE PRODUCTS HEREIN IMPROVE RELIABILITY, FUNCTION DESIGN. FAIRCHILD DOES ASSUME LIABILITY ARISING APPLICATION PRODUCT CIRCUIT DESCRIBED HEREIN; NEITHER DOES CONVEY LICENSE UNDER PATENT RIGHTS, RIGHTS OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS AUTHORIZED CRITICAL COMPONENTS LIFE SUPPORT DEVICES SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL FAIRCHILD SEMICONDUCTOR CORPORATION. used herein: Life support devices systems devices critical component component life support device system whose failure perform systems which, intended surgical implant into reasonably expected cause failure life body, support sustain life, whose support device system, affect safety failure perform when properly used accordance with instructions provided labeling, effectiveness. reasonably expected result significant injury user. PRODUCT STATUS DEFINITIONS Definition Terms Datasheet Identification Advance Information Product Status Formative Design Definition This datasheet contains design specifications product development. Specifications change manner without notice. This datasheet contains preliminary data, supplementary data will published later date. Fairchild Semiconductor reserves right make changes time without notice order improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves right make changes time without notice order improve design.
Preliminary
First Production
Identification Needed
Full Production
Obsolete
Production
This datasheet contains specifications product that been discontinued Fairchild semiconductor. datasheet printed reference information only.
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