12N035 Description Linear n-channel power field effect trans

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12N035 Description Linear n-channel power field effect trans

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N-Channel Field Effect Transistor
12N035
Description
Linear n-channel power field effect transistors produced using high cell density DMOS technology These devices particularly suited voltage applications such automotive other battery powered circuits where fast switching, in-line power loss resistance transistors needed. TO-220 offered 3-pin universally preferred commercial-industrial applications power dissipation level approximately watts. Also, available surface mount power package with power dissipation Watts
Features
Critical Electrical parameters specified elevated Temp. Rugged internal source-drain diode eliminate need external Zener diode transient suppresser Super high density cell design extremely RDS(ON)
VDSS (ON) 0.045 Ordering Information
Device
12N035T 12N035S
Package
TO-220 TO-263
Temp.
150°C 150°C
Absolute Maximum Rating
Symbol
Parameter
Drain Current -Continues -Pulsed Drain-Source Voltage Gate Source Voltage Total Power Dissipation =25°C Derate above 25°C Operating Storage Temperature Range
Unit
W/°C
VDSS VGSV TSTG
Linear,
2478 Armstrong Street, Livermore, 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
12N035
Electrical Characteristics
Symbol Parameter
CHARACTERSTICS Drain source breakdown BVDSS voltage Zero Gate Voltage Drain IDSS Current Gate-Body Leakage Forward IGBLF Gate-Body Leakage Reverse IGBLR CHARACTERSTICS VGS(TH) RDS(ON) Gate Threshold Voltage Static Drain Voltage 25°C unless otherwise specified)
Conditions
VGS=0V, ID=250µA VDS=24V VGS=0V VGS=20V VDS=0V VGS=-20V VDS=0V VDS=VGS ID=250µA VGS=10V, ID=26A VCS=4.5V, IO=21A
Units
-100 0.045 0.06 1.30
ON-State Drain Current VGS=10V ID(ON) Forward Tranconductance VDS=10V, DYNAMIC CHARACTRISTICS Input Capacitance CISS VDS= 10V, VGS=0V Output Capacitance COSS F=1.0 Reverse Tras. Capacitance CRSS SWITCHING CHARACTERSTICS Turn-ON Delay Time tD(ON) VDD=10V Turn-ON Rise Time ID=12A, VDS=10V Turn-OFF Delay Time td(off) RGEN=24 Turn-OFF Fall Time SOURCE DRAIN DIODE CHRACTERISTICS Maxim Continuous Drain source Diode Forward Current Drain Source Diode VGS=0V (note) Forward Voltage IS=6A THERMAI CHRACTERISTICS Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient Note: Pulse Test: Pulse With Duty Cycle 2.0%
°C/W °C/W
Advance Information- These data sheets contain descriptions products that development. specifications based engineering calculations, computer simulations and/ initial prototype evaluation. Preliminary Information- These data sheets contain minimum maximum specifications that based initial device characterizations. These limits subject change upon completion full characterization over specified temperature supply voltage ranges.
application circuit examples only explain representative applications devices intended guarantee circuit design permit industrial property right other rights execute. Linear takes responsibility problems related industrial property right resulting from contents shown data book. Typical parameters vary different applications. Customer's technical experts must validate operating parameters including Typical" each customer application.
LIFE SUPPORT NUCLEAR POLICY Linear products authorized should used within life support systems which intended surgical implants into body support sustain life, aircraft, space equipment, submarine, nuclear facility applications without specific written consent Linear President.
Linear,
2478 Armstrong Street, Livermore, 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com

12N035 Description Linear n-channel power field effect trans

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