Data Sheet No.PD 6.039B IRSF3011 FULLY PROTECTED POWER MOSFE

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Data Sheet No.PD 6.039B IRSF3011 FULLY PROTECTED POWER MOSFE

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Data Sheet No.PD 6.039B
IRSF3011
FULLY PROTECTED POWER MOSFET SWITCH
Features
Extremely Rugged Harsh Operating Environments Over-Temperature Protection Over-Current Protection Active Drain-to-Source Clamp Protection Compatible with Standard Power MOSFET Operating Input Current Monolithic Construction
Vds(clamp) Rds(on) Ids(sd) Tj(sd) Applications
200m 155°C 200mJ
Description
IRSF3011 three-terminal monolithic Smart Power MOSFET with built-in short circuit, over-temperature, over-voltage protections. on-chip protection circuit latches power MOSFET case drain current exceeds junction temperature exceeds 165°C keeps until input driven low. drain-to-source voltage actively clamped (typical), prior avalanche POWER MOSFET, thus improving performance during turn-off with inductive loads. input current requirements very (300µA) which makes IRSF3011 compatible with most existing designs based standard power MOSFETs.
Solenoid Driver Motor Driver
Available Packages
IRSF3011 (TO-220AB) IRSF3011L (SOT-223)
IRSF3011 Block Diagram
Order
IRSF3011
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage device occur. 25°C unless otherwise specified.)
Minimum Maximum
Vds, Vin, Vesd1 Vesd2 TJop TStg Continuous Drain Source Voltage Continuous Input Voltage Continuous Drain Current Power Dissipation Unclamped Single Pulse Inductive Energy Electrostatic Discharge Voltage (Human Body Model) Electrostatic Discharge Voltage (Machine Model) Operating Junction Temperature Range Storage Temperature Range Lead Temperature (Soldering, seconds) -0.3
self limited
Units
Test Conditions
4000 1000 self-limited
25°C 1000pF. 1.5k 200pF,
Static Electrical Characteristics
25°C unless otherwise specified.)
Minimum Typical Maximum Units
ds,clamp ds(on) Drain Source Clamp Voltage Drain Source Resistance 0.25 0.35 10.8 0.85
Test Conditions
10mA 10V, 12V, 50V, Vds=40V,Vin=0V,Tc =150°C 10mA 10mA -9A,
Drain Source Leakage Current
i,on clamp
Input Threshold Voltage Input Supply Current (Normal Operation) Input Supply Current (Protection Mode) Input Clamp Voltage Body-Drain Diode Forward Drop
Thermal Characteristics
Minimum Typical Maximum Units
Test Conditions
TO-220AB SOT-223
Junction Case Junction Ambient Junction Junction
°C/W °C/W
Order
IRSF3011
Switching ElectricalCharacteristics
(VCC 14V, Resistive Load 25°C.) Please refer Figure switching time definitions.
Minimum Typical Maximum Units
tdon tdoff Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1200
Test Conditions
Protection Characteristics
(TC= unless otherwise specified.)
Minimum Typical Maximum Units
Ids(sd) Tj(sd) Vprotect tIresp tIblank Ipeak Vreset treset tTresp Over-Current Shutdown Threshold Over Temperature Shutdown Threshold Min. Input Voltage Over-temp function Over Current Response Time Over Current Blanking Time Peak Short Circuit Current Protection Reset Voltage Protection Reset Time Over-Temperature Response Time
Test Conditions
Figure definition Figure definition Figure definition Figure definition Figure definition
Temperature Coefficients Electrical Characteristics
(Please Figures through more data thermal characteristics other electrical parameters.
Minimum Typical Maximum Units
Vds,clamp Vin,clamp Ids(sd) Drain-to-Source Clamp Voltage T.C. Input Threshold Voltage T.C. Input Clamp Voltage T.C. Over-Current Shutdown Threshold T.C. 18.2 -2.7 -9.8
Test Conditions
10mA mV/°C 10mA 10mA mA/°C
Notes: When mounted square (FR-4 material). recommended footprint soldering techniques, refer International Rectifier Application Note AN-994. tested with constant current source applied 700µS with starting 25°C. Input current must limited less than with resistor series with input when Body-Drain Diode forward biased.
Order
IRSF3011
25°C Rds(on) (mOhm) Rds(on) (mOhm)
Temperature (°C)
Figure Resistance Drain-to-Source Current
Figure Resistance Temperature
Fig. Resistance Temperature
25°C Shut Down Current
Shut Down Current
Input Voltage (Volts)
Temperature (°C)
Figure Over-Current Shutdown Threshold Input Voltage
Figure Over-Current Shutdown Threshold Temperature
Order
IRSF3011
T=25°C Input Current (mA) Input Current (mA) Iin,on Iin,off
Iin,on Iin,off
Input Voltage (Volts)
Temperature (°C)
Figure Input Current Input Voltage
Figure Input Current vs.Temperature
Rise Time, Delay (µS) Rise Time Delay 25°C Rise Time, Delay (µS)
Delay Rise Time
Input Voltage (Volts)
Temperature (°C)
Figure Turn-On Characteristics Input Voltage
Figure Turn-On Characteristics Temperature
Order
IRSF3011
25°C 0.35 Fall Time, Delay (µS) 0.25 0.15 Fall Time 0.05 Fall Time, Delay (µS) Delay
0.35 Delay 0.25 0.15 Fall Time 0.05
Input Voltage (Volts)
Temperature (°C)
Figure Turn-Off Characteristics Input Voltage
Figure Turn-Off Characteristics Temperature
Single Pulse Energy Failure (mJ)
2000 Vdd=25V 1750 1500 1250 1000 Source Drain Voltage (Volts)
Reverse Drain Current
150°C
25°C
Starting Junction Temperature (°C)
Figure Source-Drain Diode Forward Voltage
Figure Unclamped Single Pulse Inductive Energy Failure Starting Junction Temperature
Order
IRSF3011
peak
tdon tdoff
Iblank
Short applied before turn-on
Iresp
Short applied after turn-on
Figure Definition Switching Times
Figure Definition Ipeak, tlblank, tlresp
reset ds(sd) reset
Tresp TJSD
Figure Definition reset
Figure Definition tTresp
Order
IRSF3011
Case Outline SOT-223 (IRSF3011L)
NOTES: Dimensioning tolerancing ANSI Y14.5M, 1982 Controlling dimension: INCH Dimensions include lead flash Conforms JEDEC outline TO-261AA LEAD ASSIGNMENTS Gate Drain Source Drain
MILLIMETERS 1.55 1.80 0.65 0.85 2.95 3.15 0.25 0.35 6.30 6.70 3.30 3.70 2.30 4.60 6.71 7.29 0.91 0.02 0.10
INCHES 0.061 0.071 0.026 0.033 0.116 0.124 0.010 0.014 0.248 0.264 0.130 0.146 .0905 0.181 0.287 0.264 0.036 0.0006 0.004
Order
IRSF3011
Tape Reel SOT-223 (IRSF3011L)
NOTES: Controlling dimension: MILLIMETER Conforms outline EIA-481 EIA-541 Each 330.00 (13.00) reel contains 2,500 devices.
NOTES: Controlling dimension: MILLIMETER Conforms outline EIA-481-1 Dimension measured Includes flange distortion outer edge
Order
IRSF3011
Case Outline TO-220AB (IRSF3011)
NOTES: Dimensioning tolerancing ANSI Y14.5M, 1982 Controlling dimension: INCH Dimensions shown millimeters (inches) Conforms JEDEC outline TO-251AA Dimension does include solder dip. Solder max. +0.16 (.006) LEAD ASSIGNMENTS Gate Drain Source Drain
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IRSF3011 Application Information
Introduction
Protected monolithic POWER MOSFETs offer simple, cost effective solutions applications where extreme operating conditions occur. margin between operating conditions absolute maximum values narrowed, resulting better utilization device lower cost. protection also reduces off-circuit failures during handling assembly.
General Description
IRSF3011 fully protected monolithic N-channel logic level POWER MOSFET with 200m (max) on-resistance. built-in protections include over-current, over-temperature, over-voltage. over-current over-temperature protections make IRSF3011 indestructible under load conditions switching linear applications. built-in protection minimizes risk damage when device off-circuit. IRSF3011 fully characterized avalanche operation used fast de-energization inductive loads. TO-220 packaged IRSF3011 offers easy upgrade with direct pin-to-pin replacement from non-protected devices.
Block Diagram
illustrated figure zener diode between input source provides protection input also limits voltage applied input 10V. flip-flop memorizes occurrence error condition controls switches. flipflop cleared holding input specified minimum duration. COMP1 COMP2 comparators used compare over-current over-temperature signals with built-in reference. Either comparator reset fault flip-flop turn off. During fault condition, disconnects gate from input, shorts gate source resulting rapid turn-off zener diode between gate drain turns when drain source voltage exceeds 55V.
Figure Block Diagram Using higher input voltage will improve turn-on time will affect turn-off switching speed. typical waveforms input voltage shown Figure typical switching applications (below 60kHz) difference switching losses between IRSF3011 same size standard MOSFET negligible.
Input voltage 5V/div.
Drain voltage 5V/div.
Drain Current: 1A/div. Time: 1µsV/div.
Switching Characteristics
IRSF3011, control logic protection circuits powered from input pin. When positive voltage appears input pin, flip-flop turns connects gate main device input. turn-on speed limited channel resistance gate charge requirements typical switching waveforms input voltage shown Figure
Figure Waveforms switching clamped inductive load using input voltage
Over-Current Protection
When drain current exceeds preset limit, protection circuit resets internal flip-flop turns off. Normal operation restored holding input volt11
Order
IRSF3011
Input voltage 5V/div. Input voltage 5V/div.
Drain voltage 5V/div.
Drain voltage 5V/div.
Drain Current: 2A/div. Drain Current: 1A/div.
Time: 1µsV/div.
Time: 10µsV/div.
Figure Switching waveforms with Input voltage below specified threshold level (approx. 1.3V) specified minimum treset time. typical waveforms over-current shut-down shown Figure After turn-on, current inductor drain starts ramping about over-current protection shuts down device.
Figure Waveforms over-current shut-down
Input voltage 10V/div.
Drain voltage 5V/div.
Over-Temperature Protection
Figure illustrates operation over-temperature protection. IRSF3011 switches resistive load power supply. When thermal balance established, junction temperature limited pulse-by-pulse basis.
Drain Current: 2A/div.
Over-Voltage Protection
When drain-to-source voltage exceeds 55V, zener diode between gate drain turns IRSF3011 before breakdown voltage drain-source diode reached. This greatly enhances energy device safely withstand during inductive load turn-offs compared
Time: 10µsV/div.
Figure Over-temperature shut-down avalanche breakdown. Thus device used fast de-energization inductive loads. absorbed energy limited only maximum junction temperature.
WORLD HEADQUARTERS: Kansas St., Segundo, California 90245, Tel: (310) 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey 9BB, Tel: 1883 732020 CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario 2Z8, Tel: (905) 1897 GERMANY: Saalburgstrasse 157, 61350 Homburg Tel: 6172 96590 ITALY: Liguria 10071 Borgaro, Torino Tel: 0111 EAST: (K&H Bldg.) 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 3983 0086 SOUTHEAST ASIA: Outram Road, #10-02 Boon Liat Building, Singapore 0316 Tel: 8371 http://www.irf.com/ Data specifications subject change without notice. 12/96
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Data Sheet No.PD 6.039B IRSF3011 FULLY PROTECTED POWER MOSFE

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