80A, 1000V Ultrafast Diode RURG80100 ultrafast diode with soft re

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80A, 1000V Ultrafast Diode RURG80100 ultrafast diode with soft re

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RURG80100
80A, 1000V Ultrafast Diode
RURG80100 ultrafast diode with soft recovery characteristics (trr 125ns). forward voltage drop silicon nitride passivated ion-implanted epitaxial planar construction. This device intended freewheeling/clamping diode rectifier variety switching power supplies other power switching applications. stored charge ultrafast recovery with soft recovery characteristic minimizes ringing electrical noise many power switching circuits reducing power loss switching transistors. Formerly developmental type TA09887.
Features
Ultrafast with Soft Recovery <125ns Operating Temperature. .175oC Reverse Voltage .1000V Avalanche Energy Rated Planar Construction
Applications
Switching Power Supplies Power Switching Circuits General Purpose
Ordering Information
PART NUMBER RURG80100 PACKAGE TO-247 BRAND RURG80100
Packaging
JEDEC STYLE LEAD TO-247
ANODE CATHODE (BOTTOM SIDE METAL) CATHODE
NOTE: When ordering, entire part number.
Symbol
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RURG80100 UNITS 1000 1000 1000
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Blocking Voltage Average Rectified Forward Current .IF(AV) 53oC) Repetitive Peak Surge Current IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current IFSM (Halfwave, Phase, 60Hz) Maximum Power Dissipation Avalanche Energy (See Figures EAVL Operating Storage Temperature TSTG,
1-888-INTERSIL 321-724-7143 Copyright
Intersil Corporation 2000
RURG80100
Electrical Specifications
SYMBOL 80A, 150oC 1000V 1000V, 150oC dIF/dt 100A/µs 80A, dIF/dt 100A/µs DEFINITIONS Instantaneous forward voltage 300µs, 2%). Instantaneous reverse current. Reverse recovery time (See Figure summation Time reach peak reverse current (See Figure Time from peak projected zero crossing based straight line from peak through (See Figure Thermal resistance junction case. Pulse width. Duty cycle. 80A, dIF/dt 100A/µs 80A, dIF/dt 100A/µs 25oC, Unless Otherwise Specified TEST CONDITION 0.83 UNITS
oC/W
Typical Performance Curves
175oC REVERSE CURRENT (µA) 1000 175oC FORWARD CURRENT
100oC
100oC
25oC
25oC 0.01 1000
FORWARD VOLTAGE
REVERSE VOLTAGE
FIGURE FORWARD CURRENT FORWARD VOLTAGE
FIGURE REVERSE CURRENT REVERSE VOLTAGE
RURG80100 Typical Performance Curves
TIME (ns) FORWARD CURRENT
(Continued)
IF(AV), AVERAGE FORWARD CURRENT
WAVE
CASE TEMPERATURE (oC)
FIGURE trr, CURVES FORWARD CURRENT
FIGURE CURRENT DERATING CURVE
Test Circuits Waveforms
AMPLITUDE CONTROL dIF/dt CONTROL
CURRENT SENSE
IGBT
0.25
FIGURE TEST CIRCUIT
1.6A 40mH EAVL 1/2LI2 [VR(AVL) /(VR(AVL) VDD)] IGBT (BVCES VR(AVL)) CURRENT SENSE
FIGURE WAVEFORMS DEFINITIONS
VAVL
FIGURE AVALANCHE ENERGY TEST CIRCUIT
FIGURE AVALANCHE CURRENT VOLTAGE WAVEFORMS
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
information regarding Intersil Corporation products, site www.intersil.com

80A, 1000V Ultrafast Diode RURG80100 ultrafast diode with soft re

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