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Data Sheet PD-6.028C IR2111 HALF-BRIDGE DRIVER Features


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Data Sheet PD-6.028C
IR2111
HALF-BRIDGE DRIVER
Features
Floating channel designed bootstrap operation
Fully operational +600V Tolerant negative transient voltage dV/dt immune Gate drive supply range from Undervoltage lockout both channels CMOS Schmitt-triggered inputs with pull-down Matched propagation delay both channels Internally deadtime High side output phase with input
Product Summary
VOFFSET IO+/VOUT ton/off (typ.) Deadtime (typ.) 600V max.
Description
IR2111 high voltage, high speed power MOSFET IGBT driver with dependent high side referenced output channels designed half-bridge applications. Proprietary HVIC latch immune CMOS technologies enable ruggedized monolithic construction. Logic input compatible with standard CMOS outputs. output drivers feature high pulse current buffer stage designed minimum driver cross-conduction. Internal deadtime provided avoid shoot-through output half-bridge. floating channel used drive N-channel power MOSFET IGBT high side configuration which operates volts.
Packages
Typical Connection
600V
LOAD
Order
ONTROL NTEGRATED CIRCUIT ESIGNERS ANUAL
B-39
IR2111
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage device occur. voltage parameters absolute voltages referenced COM. Thermal Resistance Power Dissipation ratings measured under board mounted still conditions. Additional information shown Figures through
Symbol
s/dt
Parameter Definition
High Side Floating SupplyVoltage High Side Floating Supply Offset Voltage High Side Floating OutputVoltage Side Logic Fixed Supply Voltage Side Output Voltage Logic InputVoltage Allowable Offset SupplyVoltage Transient (Figure Package Power Dissipation +25°C Thermal Resistance, Junction Ambient JunctionTemperature Storage Temperature LeadTemperature (Soldering, seconds) Lead DIP) Lead SOIC) Lead DIP) Lead SOIC)
Value Min.
-0.3 -0.3 -0.3 -0.3
Max.
0.625
Units
V/ns °C/W
Recommended Operating Conditions
Input/Output logic timing diagram shown Figure proper operation device should used within recommended conditions. offset rating tested with supplies biased differential.
Symbol
Parameter Definition
High Side Floating Supply AbsoluteVoltage High Side Floating Supply Offset Voltage High Side Floating OutputVoltage Side Logic Fixed Supply Voltage Side Output Voltage Logic InputVoltage AmbientTemperature
Value Min.
Note
Max.
Units
Note Logic operational +600V. Logic state held -VBS.
B-40
CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL
Order
IR2111
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) 15V, 1000 25°C unless otherwise specified. dynamic electrical characteristics measured using test circuit shown Figure
Symbol
Parameter Definition
Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Deadtime, Turn-Off Turn-On Turn-Off Turn-On Delay Matching, Turn-On/Off
Value Min. Typ. Max. Units Test Conditions
1,000 600V
Static Electrical Characteristics
VBIAS (VCC, VBS) 25°C unless otherwise specified. VIN, parameters referenced COM. parameters referenced applicable respective output leads:
Symbol
Parameter Definition
Logic Input Voltage Logic
Value Min. Typ. Max. Units Test Conditions
12.6 15V, 600V
Logic Input Voltage Logic
IQCC IIN+ IINVBSUV+ VBSUVVCCUV+ VCCUVIO+
High Level Output Voltage, VBIAS Level Output Voltage, Offset Supply Leakage Current Quiescent Supply Current Quiescent Supply Current Logic Input Bias Current Logic Input Bias Current Supply Undervoltage Positive Going Threshold Supply Undervoltage Negative Going Threshold Supply Undervoltage Positive Going Threshold Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Output Short Circuit Pulsed Current
Order
CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL B-41
IR2111
Functional Block Diagram
DETECT DEAD TIME PULSE DETECT
LEVEL SHIFT
PULSE FILTER
DEAD TIME
Lead Definitions
Lead Symbol Description
Logic input high side side gate driver outputs LO), phase with High side floating supply High side gate drive output High side floating supply return side logic fixed supply side gate drive output side return
Lead Assignments
Lead
SO-8
IR2111 Part Number
B-42 CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL
IR2111S
Order
IR2111
Device Information
Process Design Rule Transistor Count Size Outline HVDCMOS (mil)
Thickness Gate Oxide Connections First Layer
Second Layer Contact Hole Dimension Insulation Layer Passivation Method Method Bond Wire Bond Leadframe
Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness
Package Remarks:
Method Material Material Area Lead Plating Types Materials
Poly Silicon (Si: 1.0% ±0.1%) (SiO2) (SiO2) Full Ablebond Thermo Sonic (1.0 mil) Lead PDIP SO-8 EME6300 MP150 MP190
Order
CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL B-43
IR2111
Figure Input/Output Timing Diagram
Figure Floating Supply Voltage Transient Test Circuit
IN(LO)
IN(HO)
Figure Switching Time Test Circuit
Figure Switching Time Waveform Definition
(LO)
(HO)
Figure Deadtime Waveform Definitions
Figure Delay Matching Waveform Definitions
B-44
CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL
Order
IR2111
320V 140V
320V
140V
Junction Temperature (°C) Junction Temperature (°C)
1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
Figure IR2111 Frequency (IRFBC20) RGATE
Figure IR2111 Frequency (IRFBC30) RGATE
320V 140V
320V 140V
Junction Temperature (°C) Junction Temperature (°C) 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
1E+2
1E+2 1E+3 1E+4 Frequency (Hz) 1E+5 1E+6
Figure IR2111 Frequency (IRFBC40) RGATE
Figure IR2111 Frequency (IRFPE50) RGATE
Order
CONTROL INTEGRATED IRCUIT DESIGNERS MANUAL B-45

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