Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425
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Top Searches for this datasheet
XP1507
Silicon epitaxial planer transistor
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 0.02
+0.05
High breakdown voltage noise amplification
0.65
Features
elements incorporated into package. (Emitter-coupled transistors) Reduction mounting area assembly cost half.
2.0±0.1
0.65
0.9±
2SD814 elements
0.7±0.1
Basic Part Number Element
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Rating Collector emitter voltage Emitter base voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO Tstg
(Ta=25°C)
Ratings +150 Unit
Base (Tr1) Emitter Base (Tr2)
Collector (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector emitter voltage Emitter base voltage Collector cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol VCEO VEBO ICBO (small/large)*1 VCE(sat) Conditions 100µA, 10µA, 100V, 10mA 10mA 30mA, 10V, -10mA, 200MHz 10V, 1MHz 0.99 Unit
Ratio between elements
XP1507
Ta=25°C VCE=10V 25°C Ta=75°C -25°C
Total power dissipation (mW)
Collector current (mA)
Collector current (mA)
IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA
0.2mA
Ambient temperature (°C)
Collector emitter voltage
Base emitter voltage
VCE(sat)
IC/IB=10
VCE=10V
VCB=10V Ta=25°C
Collector emitter saturation voltage VCE(sat)
Forward current transfer ratio
Transition frequency (MHz)
-25°C 0.03 0.01
Ta=75°C 25°C
25°C
Ta=75°C
-25°C
-100
Collector current (mA)
Collector current
(mA)
Emitter current (mA)
Collector output capacitance (pF)
f=1MHz IE=0 Ta=25°C
Collector base voltage
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