CHANNEL 500V TO-251/TO-252 PowerMESH MOSFET TYPE D3NC50 DS(o

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CHANNEL 500V TO-251/TO-252 PowerMESH MOSFET TYPE D3NC50 DS(o

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STD3NC50
CHANNEL 500V TO-251/TO-252 PowerMESH MOSFET
TYPE D3NC50
DS(on)
TYPICAL RDS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED SUFFIX "T4" ORDERING TAPE REEL.
DPAK TO-252 (Suffix "T4") IPAK TO-251 (Suffix "-1")
DESCRIPTION PowerMESH evolution first generation MESH OVERLAY. layout refinements introduced greatly improve Ron*area figure merit while keeping device leading edge what concerns switching speed, gate charge ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS WELDING EQUIPMENT UNINTERRUPTIBLE POWER SUPPLIES MOTOR DRIVER
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol dv/dt( Parameter Drain-source Voltage Drain- gate Voltage ate-source Voltage Drain Current (continuous) Drain Current (continuous) Drain Current (pulsed) otal Dissipation Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
Value 12.8 0.48
di/dt A/µs, V(BR)DSS, TJMAX
V/ns
Pulse width limited safe operating area
January 2000
STD3NC50
THERMAL DATA
-case
Rthj -amb
thc-sink
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature Soldering Purpose
oC/W
AVALANCHE CHARACTERISTICS
Symbo Parameter Avalanche Current, Repetitive Not-Repetitive (pulse width limited max) Single Pulse Avalanche Energy (starting Valu Unit
ELECTRICAL CHARACTERISTICS (Tcase unless otherwise specified)
Symbo (BR)DSS IGSS Parameter Drain-source Breakdown Voltage Test ditions Min. Max. Unit
Rating Zero Voltage Drain Current Rating Gate-body Leakage Current (VDS
Symbo GS(th) DS(on) Parameter Gate Threshold Voltage Test ditions Min. Max. Unit
Static Drain-source Resistance
State Drain Current ID(o DS(on
DYNAMIC
Symbo Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse ransfer Capacitance Test ditions ID(o DS(on Min. Max. Unit
STD3NC50
ELECTRICAL CHARACTERISTICS (continued) SWITCHING
Symbo d(on) Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test ditions Min. Max. Unit
SWITCHING
Symbo (Voff) Parameter Off-voltage Rise Time Fall Time Cross-over Time Test ditions Min. Max. Unit
SOURCE DRAIN DIODE
Symbo Parameter Source-drain Current Source-drain Current (pulsed) Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current di/dt A/µs Test ditions Min. Max. Unit
Pulsed: Pulse duration duty cycle Pulse width limited safe operating area
STD3NC50
Fig. Unclamped Inductive Load Test Circuit Fig. Unclamped Inductive Waveform
Fig. Switching Times Test Circuits Resistive Load
Fig. Gate Charge test Circuit
Fig. Test Circuit Inductive Load Switching Diode Recovery Times
STD3NC50
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. 0.45 0.48 15.9 0.95 16.3 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 0.64 TYP. MAX. 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
0068771-E
STD3NC50
TO-252 (DPAK) MECHANICAL DATA
MIN. 0.03 0.64 0.45 0.48 9.35 0.023 TYP. MAX. 0.23 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
DETAIL
DETAIL
0068772-B
STD3NC50
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CHANNEL 500V TO-251/TO-252 PowerMESH MOSFET TYPE D3NC50 DS(o

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