POWER COMPLEMENTARY SILICON TRANSISTORS 2N6050, 2N6051 2N6052 sil
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2N6050/51/52 2N6057/58/59
POWER COMPLEMENTARY SILICON TRANSISTORS
2N6050, 2N6051 2N6052 silicon epitaxialbase transistors monolithic Darlington configuration mounted Jedec TO-3 metal case. They inteded power linear frequency switching applications. complementary types 2N6057, 2N6058 2N6059 respectively.
Symbol
Ratings
2N6050 2N6057
Value
Unit
VCBO
Collector-Base Voltage
IE=0
2N6051 2N6058 2N6052 2N6059 2N6050 2N6057
VCEO
Collector-EmitterVoltage
IB=0
2N6051 2N6058 2N6052 2N6059 2N6050 2N6057
VCEX
Collector-EmitterVoltage
VBE=-1.5
2N6051 2N6058 2N6052 2N6059
COMSET SEMICONDUCTORS
2N6050/51/52 2N6057/58/59
2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059
VEBO
Emitter-Base Voltage
IC=0
Collector Current
Collector Peak Current
Base Current
Power Dissipation
Watts
Junction Storage Temperature
+200
THERMAL CHARACTERISTICS Symbol Ratings
2N6050 2N6057 2N6051 2N6058 2N6052 2N6059
Value
Unit
RthJ-C
Thermal Resistance, Junction Case
1.17
°C/W
2N6050/51/52
COMSET SEMICONDUCTORS
2N6050/51/52 2N6057/58/59
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Unit
2N6050 2N6057 VCE= VCEX VBE=-1.5 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057
ICEX
Collector Cutoff Current
VCE= VCEX VBE=-1.5 TC=150°C
VCE=30 Vdc, IB=0
ICEO
Collector Cutoff Current
VCE=40 Vdc, IB=0
VCE=50 Vdc, IB=0
IEBO
Emitter Cutoff Current
VEB=5
2N6051 2N6058 2N6052 2N6059 2N6050 2N6057
VCEO(SUS)
Collector-Emitter Sustaining IC=0.1 Voltage
2N6051 2N6058 2N6052 2N6059
COMSET SEMICONDUCTORS
2N6050/51/52 2N6057/58/59
2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059
IC=6 IB=24
VCE(SAT)
Collector-Emitter saturation Voltage
IC=12 IB=120
VBE(SAT)
Base-Emitter Saturation Voltage
IC=12 IB=120
VBE(ON)
Base-Emitter Voltage
IC=6 VCE=3
Transition Frequency
IC=5 VCE=3
VCE=3 IC=6.0
Current Gain
VCE=3.0 IC=12
types current voltage values negative Pulse Width Duty Cycle 2.0%
COMSET SEMICONDUCTORS
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