Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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XP2215
Silicon epitaxial planer transistor
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 0.02
+0.05
switching/digital circuits
0.65
Features
elements incorporated into package. (Base-coupled transistors with built-in resistor) Reduction mounting area assembly cost half.
2.0±0.1
0.65
0.9±
UN1215 elements
0.7±0.1
Basic Part Number Element
0.2±0.1
Absolute Maximum Ratings
Parameter Collector base voltage Rating Collector emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO Tstg
(Ta=25°C)
Ratings +150 Unit
Emitter (Tr1) Base Emitter (Tr2)
Collector (Tr2) Collector (Tr1) EIAJ SC-88A S-Mini Type Package (5-pin)
Marking Symbol: Internal Connection
Electrical Characteristics
Parameter Collector base voltage Collector emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Forward current transfer ratio Collector emitter saturation voltage Output voltage high level Output voltage level Transition frequency Input resistance
(Ta=25°C)
Symbol VCBO VCEO ICBO ICEO IEBO (small/large)*1 VCE(sat) Conditions 10µA, 2mA, 50V, 50V, 10V, 10V, 10mA, 0.3mA 0.5V, 2.5V, 10V, -2mA, 200MHz -30% +30% 0.99 0.25 0.01 Unit
Ratio between elements
XP2215
Total power dissipation (mW)
Ambient temperature (°C)
VCE(sat)
Collector emitter saturation voltage VCE(sat)
IC/IB=10
VCE=10V
0.03 0.01 25°C
Forward current transfer ratio
IB=1.0mA 0.9mA 0.8mA
Ta=25°C
25°C -25°C Ta=75°C
Collector current (mA)
0.7mA 0.6mA 0.5mA 0.4mA 0.3mA
0.2mA 0.1mA
Ta=75°C
-25°C
1000
Collector emitter voltage
Collector current (mA)
Collector current (mA)
f=1MHz IE=0 Ta=25°C 10000 3000 VO=5V Ta=25°C
VO=0.2V Ta=25°C
Collector output capacitance (pF)
Output current (µA)
Input voltage
1000
0.03 0.01
Collector base voltage
Input voltage
Output current (mA)

Silicon epitaxial planer transistor 2.1±0.1 0.425 1.25±0.1 0.425

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