49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Chann

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49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Chann

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HRFZ44N
49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET
This N-Channel power MOSFET manufactured using innovative UltraFETprocess. This advanced process technology achieves lowest possible on-resistance silicon area, resulting outstanding performance. This device capable withstanding high energy avalanche mode diode exhibits very reverse recovery time stored charge. designed applications where power efficiency important, such switching regulators, switching converters, motor drivers, relay drivers, lowvoltage switches, power management portable battery-operated products. Formerly developmental type TA75329.
Features
49A, Simulation Models Temperature Compensated PSPICE® SABER© Electrical Models Spice Saber Thermal Impedance Models Peak Current Pulse Width Curve Rating Curve Related Literature TB334, "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER HRFZ44N PACKAGE TO-220AB BRAND HRFZ44N
NOTE: When ordering, entire part number.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE)
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. UltraFETis trademark Intersil Corporation. PSPICE® registered trademark MicroSim Corporation. SABER© Copyright Analogy, Inc. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
HRFZ44N
Absolute Maximum Ratings
25oC, Unless Otherwise Specified 0.227 UNITS W/oC
Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage Drain Current Continuous (Figure Pulsed Drain Current (Note .IDM Pulsed Avalanche Rating .UIS Power Dissipation Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC. Repetitive rating: pulse width limited maximum junction temperature.
Electrical Specifications
PARAMETER STATE SPECIFICATIONS
25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
Drain Source Breakdown Voltage Zero Gate Voltage Drain Current
BVDSS IDSS
250µA, (Figure 50V, 45V, 150oC
±100
Gate Source Leakage Current STATE SPECIFICATIONS Gate Source Threshold Voltage Drain Source Resistance THERMAL SPECIFICATIONS Thermal Resistance Junction Case Thermal Resistance Junction Ambient SWITCHING SPECIFICATIONS (VGS 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge Threshold Gate Charge Gate Source Gate Charge Reverse Transfer Capacitance
IGSS
±20V
VGS(TH) rDS(ON)
VDS, 250µA (Figure 25A, (Figure
0.019
0.022
(Figure TO-220
1.25
oC/W oC/W
td(ON) td(OFF) tOFF
30V, 25A, 1.2, 10V, (Figures
Qg(TOT) Qg(10) Qg(TH)
30V, 25A, Ig(REF) 1.0mA (Figures
HRFZ44N
Electrical Specifications
PARAMETER CAPACITANCE SPECIFICATIONS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS 25V, 1MHz (Figure 1060 25oC, Unless Otherwise Specified SYMBOL TEST CONDITIONS UNITS
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge SYMBOL 25A, dISD/dt 100A/µs 25A, dISD/dt 100A/µs TEST CONDITIONS 1.25 UNITS
Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC) CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
THERMAL IMPEDANCE ZJC, NORMALIZED DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01 NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 RECTANGULAR PULSE DURATION 10-1
SINGLE PULSE 0.01 10-4
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
HRFZ44N Typical Performance Curves
1000
(Continued)
25oC
IDM, PEAK CURRENT
TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT FOLLOWS:
TRANSCONDUCTANCE LIMIT CURRENT THIS REGION 10-5 10-4 10-3 10-2 PULSE WIDTH 10-1
FIGURE PEAK CURRENT CAPABILITY
100µs
IAS, AVALANCHE CURRENT
RATED 25oC
DRAIN CURRENT
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
STARTING 25oC
OPERATION THIS AREA LIMITED rDS(ON) BVDS
10ms
STARTING 150oC
0.001
VDS, DRAIN SOURCE VOLTAGE
0.01 tAV, TIME AVALANCHE (ms)
NOTE: Refer Intersil Application Notes AN9321 AN9322. FIGURE FORWARD BIAS SAFE OPERATING AREA FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
DRAIN CURRENT
DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 175oC -55oC
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC VDS, DRAIN SOURCE VOLTAGE
25oC
VGS, GATE SOURCE VOLTAGE
FIGURE SATURATION CHARACTERISTICS
FIGURE TRANSFER CHARACTERISTICS
HRFZ44N Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE
(Continued)
PULSE DURATION 80µs DUTY CYCLE 0.5%
10V, NORMALIZED GATE THRESHOLD VOLTAGE
VDS, 250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE
250µA
1800 1500 1MHz CISS CRSS COSS
CAPACITANCE (pF)
1200 COSS CRSS CISS
DRAIN SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE BREAKDOWN VOLTAGE JUNCTION TEMPERATURE
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
GATE SOURCE VOLTAGE
WAVEFORMS DESCENDING ORDER: 36.75A 24.5A 12.25A
GATE CHARGE (nC)
NOTE: Refer Intersil Application Notes AN7254 AN7260. FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT
HRFZ44N Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
Qg(TOT)
Qg(10) Qg(TH) Ig(REF)
IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
HRFZ44N PSPICE Electrical Model
.SUBCKT HRFZ44N
1.72e-9 1.52e-9 9.61e-10
LDRAIN
6/19/97
DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD EBREAK 58.13 EVTHRES EVTEMP LDRAIN 1e-9 LGATE 2.86e-9 LSOURCE 2.69e-9 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD RBREAK RBREAKMOD RDRAIN RDRAINMOD 1e-3 RGATE 1.52 RLDRAIN RLGATE 26.9 RLSOURCE 28.6 RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 13.85e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
GATE RLGATE
DPLCAP
RLDRAIN DBREAK EBREAK
DRAIN RSLC1 ESLC
RSLC2
LGATE EVTEMP RGATE EVTHRES
MSTRO LSOURCE RSOURCE RLSOURCE RBREAK RVTEMP SOURCE
VBAT ESLC .MODEL DBODYMOD 7.50e-13 5.05e-3 TRS1 2.21e-3 TRS2 1.02e-6 1.51e-9 4.05e-8 0.5) .MODEL DBREAKMOD 2.14e-1 TRS1 9.62e-4 TRS2 1.23e-6) .MODEL DPLCAPMOD (CJO 13.5e-10 1e-30 0.85) .MODEL MMEDMOD NMOS (VTO 3.25 2.50 1e-30 1.52) .MODEL MSTROMOD NMOS (VTO 3.80 70.0 1e-30 .MODEL MWEAKMOD NMOS (VTO 2.91 0.06 1e-30 15.2 0.1) .MODEL RBREAKMOD (TC1 1.05e-3 1.94e-7) .MODEL RDRAINMOD (TC1 8.04e-2 1.37e-4) .MODEL RSLCMOD (TC1 4.83e-3 1.16e-6) .MODEL RSOURCEMOD (TC1 .MODEL RVTHRESMOD -3.43e-3 -1.63e-5) .MODEL RVTEMPMOD (TC1 -1.35e-3 1.16e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2BMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF -7.90 VOFF= -4.90) -4.90 VOFF= -7.90) -0.50 VOFF= 2.50) 2.50 VOFF= -0.50)
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
RDRAIN
DBODY
MWEAK MMED
VBAT
RVTHRES
HRFZ44N SABER Electrical Model
June 1997 template hrfz44n electrical iscl d.model dbodymod 7.50e-13, 1.51e-9, 4.05e-8, 0.5) d.model dbreakmod d.model dplcapmod (cjo 13.5e-10, 1e-30, 0.85) m.model mmedmod (type=_n, 3.25, 2.50, 1e-30, m.model mstrongmod (type=_n, 3.80, 1e-30, m.model mweakmod (type=_n, 2.91, 0.06, 1e-30, sw_vcsp.model s1amod (ron 1e-5, roff 0.1, -7.90, voff -4.90) sw_vcsp.model s1bmod (ron 1e-5, roff 0.1, -4.90, voff -7.90) sw_vcsp.model s2amod (ron 1e-5, roff 0.1, -0.50, voff 2.50) sw_vcsp.model s2bmod (ron 1e-5, roff 0.1, 2.50, voff -0.50) c.ca 1.72e-9 c.cb 1.52e-9 c.cin 9.61e-10 d.dbody model=dbodymod d.dbreak model=dbreakmod d.dplcap model=dplcapmod
LGATE EVTEMP RGATE MSTRO
LDRAIN DPLCAP RSLC1 RSLC2 ISCL EVTHRES RDRAIN MWEAK MMED EBREAK RSOURCE RLSOURCE DBODY RLDRAIN RDBREAK DBREAK RDBODY DRAIN
i.it l.ldrain 1e-9 l.lgate 2.86e-9 l.lsource 2.69e-9
GATE RLGATE
LSOURCE
SOURCE
m.mmed model=mmedmod, m.mstrong model=mstrongmod, m.mweak model=mweakmod,
RBREAK RVTEMP VBAT RVTHRES
res.rbreak 1.05e-3, 1.94e-7 res.rdbody 5.05e-3, 2.21e-3, 1.02e-6 res.rdbreak 2.14e-1, 9.62e-4, 1.23e-6 res.rdrain 1e-3, 8.04e-2, 1.37e-4 res.rgate 1.52 res.rldrain res.rlgate 26.9 res.rlsource 28.6 res.rslc1 1e-6, 4.83e-3, 1.16e-6 res.rslc2 res.rsource 13.85e-3, res.rvtemp -1.35e-3, 1.16e-6 res.rvthres -3.43e-3, -1.63e-5 spe.ebreak 58.13 spe.eds spe.egs spe.esg spe.evtemp spe.evthres sw_vcsp.s1a model=s1amod sw_vcsp.s1b model=s1bmod sw_vcsp.s2a model=s2amod sw_vcsp.s2b model=s2bmod v.vbat
equations (n51->n50) iscl iscl: v(n51,n50) 3.5))
HRFZ44N SPICE Thermal Model
February 1999
JUNCTION
HRFZ44N
CTHERM1 2.80e-3 CTHERM2 1.00e-2 CTHERM3 6.80e-3 CTHERM4 7.00e-3 CTHERM5 1.60e-2 CTHERM6 15.55 RTHERM1 7.94e-3 RTHERM2 1.98e-2 RTHERM3 5.57e-2 RTHERM4 3.13e-1 RTHERM5 4.71e-1 RTHERM6 6.26e-2
RTHERM1
CTHERM1
RTHERM2
CTHERM2
SABER Thermal Model
SABER thermal model HRFZ44N template thermal_model thermal_c ctherm.ctherm1 2.80e-3 ctherm.ctherm2 1.00e-2 ctherm.ctherm3 6.80e-3 ctherm.ctherm4 7.00e-3 ctherm.ctherm5 1.60e-2 ctherm.ctherm6 15.55 rtherm.rtherm1 7.94e-3 rtherm.rtherm2 1.98e-2 rtherm.rtherm3 5.57e-2 rtherm.rtherm4 3.13e-1 rtherm.rtherm5 4.71e-1 rtherm.rtherm6 6.26e-2
RTHERM3 CTHERM3
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
CASE
Intersil semiconductor products manufactured, assembled tested under ISO9000 quality systems certification.
Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
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49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Chann

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