Mbit (64Kb x16) Voltage EPROM EPROM 2.7V 3.6V VOLTAGE READ OPERAT

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Mbit (64Kb x16) Voltage EPROM EPROM 2.7V 3.6V VOLTAGE READ OPERAT

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M27W102
Mbit (64Kb x16) Voltage EPROM EPROM
2.7V 3.6V VOLTAGE READ OPERATION READ ACCESS TIME: 70ns 3.0V 3.6V 80ns 2.7V 3.6V
COMPATIBLE with M27C1024 POWER CONSUMPTION: 15µA Standby Current 15mA Active Current 5MHz
FDIP40W
PDIP40
PROGRAMMING TIME 100µs/word HIGH RELIABILITY CMOS TECHNOLOGY 2,000V Protection 200mA Latchup Protection Immunity
PLCC44
ELECTRONIC SIGNATURE Manufacturer Code: 0020h Device Code: 008Ch Figure Logic Diagram
TSOP40
DESCRIPTION M27W102 voltage Mbit EPROM offered ranges (ultra violet erase) (one time programmable). ideally suited microprocessor systems requiring large data program storage organized 65,536 words bits. M27W102 operates read mode with supply voltage 2.7V 85°C temperature range. decrease operating power allows either reduction size battery increase time between battery recharges. FDIP40W (window ceramic frit-seal package) transparent which allows user expose chip ultraviolet light erase pattern. pattern then written device following programming procedure. application where content programmed only time erasure required, M27w102 offered PDIP40, PLCC44 TSOP40 packages.
A0-A15
Q0-Q15
M27W102
AI01922
April 2000
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M27W102
Figure ConnectionVPP M27W102
AI02673
Figure ConnectionVCC
M27W102
AI01924
Figure TSOP Connection
Table Signal NameA0-A15 Address Inputs Data Outputs Chip Enable Output Enable Program Program Supply Supply Voltage Ground Connected Internally
DQ15 DQ14 DQ13 DQ12 DQ11 DQ10
M27W102 (Normal)
AI01925
Q0-Q15
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M27W102
Table Absolute Maximum Ratings
Symbol TBIAS TSTG Parameter Ambient Operating Temperature Temperature Under Bias Storage Temperature Input Output Voltage (except Supply Voltage Voltage Program Supply Voltage Value 13.5 Unit
Note: Except rating "Operating Temperature Range", stresses above those listed Table "Absolute Maximum Ratings" cause permanent damage device. These stress ratings only operation device these other conditions above those indicated Operating sections this specification implied. Exposure Absolute Maximum Rating conditions extended periods affect device reliability. Refer also STMicroelectronics SURE Program other relevant quality documents. Minimum voltage Input Output -0.5V with possible undershoot -2.0V period less than 20ns. Maximum voltage Output +0.5V with possible overshoot period less than 20ns. Depends range.
Table Operating ModeMode Read Output Disable Program Verify Program Inhibit Standby Electronic Signature Pulse Q15-Q0 Data Hi-Z Data Input Data Output Hi-Z Hi-Z Code
Note: VIL, 0.5V.
Table Electronic Signature
Identifier Manufacturer's Code Device Code Data
Note: Outputs Q15-Q8 '0'.
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M27W102
Table Measurement ConditionHigh Speed Input Rise Fall Times Input Pulse Voltages Input Output Timing Ref. Voltages 10ns 1.5V Standard 20ns 0.4V 2.4V 0.8V
Figure Testing Input Output Waveform
Figure Testing Load Circuit
1.3V
High Speed 1.5V DEVICE UNDER TEST 2.0V 0.8V
AI01822
1N914
3.3k
Standard 2.4V
0.4V
30pF High Speed 100pF Standard includes capacitance
AI01823B
Table Capacitance MHz)
Symbol COUT Parameter Input Capacitance Output Capacitance Test Condit VOUT Unit
Note: Sampled only, 100% tested.
DEVICE OPERATION operating modes M27W102 listed Operating Modes table. single power supply required read mode. inputs levels except Electronic Signature. Read Mode M27W102 control functions, both which must logically active order obtain data outputs. Chip Enable power control should used device selection. Output Enable output control should used gate data output pins, independent device selection. Assuming that addresses stable, address access time
(tAVQV) equal delay from output (tELQV). Data available output after delay from falling edge assuming that been addresses have been stable least tAVQV-t GLQV. Standby Mode M27W102 standby mode which reduces supply current from 15mA 15µA with voltage operation 3.6V, Read Mode Characteristics table details. M27W102 placed standby mode applying CMOS high signal input. When standby mode, outputs high impedance state, independent input.
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M27W102
Table Read Mode Characteristics 85°C; 2.7V 3.6V; VCC)
Symbol ICC1 ICC2 Parameter Input Leakage Current Output Leakage Current Supply Current Supply Current (Standby) Supply Current (Standby) CMOS Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage 2.1mA -400µA Test Condition VOUT VIL, VIL, IOUT 0mA, 5MHz, 3.6V 0.2V, 3.6V -0.6 Unit
Note: must applied simultaneously with before removed simultaneously after Maximum voltage Output +0.5V.
Line Output Control Because EPROMs usually used larger memory arrays, this product features line control function which accommodates multiple memory connection. line control function allows: lowest possible memory power dissipation, complete assurance that output contention will occur. most efficient these control lines, should decoded used primary device selecting function, while should made common connection devices array connected READ line from system control bus. This ensures that deselected memory devices their power standby mode that output pins only active when data required from particular memory device.
System Considerations power switching characteristics Advanced CMOS EPROMs require careful decoupling devices. supply current, three segments that interest system designer: standby current level, active current level, transient current peaks that produced falling rising edges magnitude transient current peaks dependent capacitive inductive loading device output. associated transient voltage peaks suppressed complying with line output control properly selected decoupling capacitors. recommended that 0.1µF ceramic capacitor used every device between VSS. This should high frequency capacitor inherent inductance should placed close device possible. addition, 4.7µF bulk electrolytic capacitor should used between every eight devices. bulk capacitor should located near power supply connection point. purpose bulk capacitor overcome voltage drop caused inductive effects traces.
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M27W102
Table Read Mode Characteristics 85°C; 2.7V 3.6V; VCC)
M27W102 Test Condition tAVQV tELQV tGLQV tEHQZ tGHQZ tAXQX tACC Address Valid Output Valid Chip Enable Output Valid Output Enable Output Valid Chip Enable High Output Hi-Z Output Enable High Output Hi-Z Address Transition Output Transition VIL, VIL, -100 (-120/-150/-200)
Symbol
Parameter
Unit
3.0V 3.6V 2.7V 3.6V 2.7V 3.6V
Note: must applied simultaneously with before removed simultaneously after Sampled only, 100% tested. Speed obtained with High Speed measurement conditions.
Figure Read Mode Waveform
A0-A15
VALID tAVQV tAXQX
VALID
tGLQV tELQV Q0-Q15 tGHQZ Hi-Z tEHQZ
AI00705B
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M27W102
Table Programming Mode Characteristics 6.25V 0.25V; 12.75V 0.25V)
Symbol Parameter Input Leakage Current Supply Current Program Current Input Voltage Input High Voltage Output Voltage Output High Voltage Voltage 2.1mA -400µA 11.5 12.5 -0.3 Test Condition Unit
Note: must applied simultaneously with before removed simultaneously after
Table Programming Mode Characteristics 6.25V 0.25V; 12.75V 0.25V)
Symbol tAVPL tQVPL tVPHPL VCHPL tELPL tPLPH tPHQX tQXGL tGLQV tGHQZ tGHAX tVPS tVCS tCES tOES tDFP Parameter Address Valid Program Input Valid Program High Program High Program Chip Enable Program Program Pulse Width Program High Input Transition Input Transition Output Enable Output Enable Output Valid Output Enable High Output Hi-Z Output Enable High Address Transition Test Condition Unit
Note: must applied simultaneously with before removed simultaneously after Sampled only, 100% tested.
Programming M27W102 been designed fully compatible with M27C1024 same electronic signature. result M27W102 programmed M27C1024 same programming equipment applying 12.75V 6.25V same PRESTO algorithm. When delivered (and after each `1's erasure EPROM), bits M27W102 state. Data introduced selectively programming '0's into desired locations.
though only '0's will programmed, both '1's '0's present data word. only change exopsure ultraviolet light EPROM). M27W102 programming mode when input 12.75V, pulsed VIL. data programmed applied bits parallel data output pins. levels required address data inputs TTL. specified 6.25V 0.25V.
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M27W102
Figure Programming Verify Modes WaveformA0-A15 tAVPL Q0-Q15 tQVPL tVPHPL tVCHPL tELPL tPLPH tQXGL tGHAX tGLQV tGHQZ DATA tPHQX DATA VALID
PROGRAM
VERIFY
AI00706
Figure Programming Flowchart
6.25V, 12.75V
100µs Pulse VERIFY Last Addr Addr
FAIL
CHECK WORDS 1st: 2nd: 2.7V
AI00707D
PRESTO Programming Algorithm PRESTO Programming Algorithm allows programming whole array with guaranteed margin, typical time seconds. Programming with PRESTO consists applying sequence 100µs program pulses each word until correct verify occurs (see Figure During programming verify operation, MARGIN MODE circuit automatically activated order guarantee that each cell programmed with enough margin. overprogram pulse applied since verify MARGIN MODE much higher than 3.6V, provides necessary margin each programmed cell. Program Inhibit Programming multiple M27W102s parallel with different data also easily accomplished. Except like inputs including parallel M27W102 common. level pulse applied M27W102's input, with 12.75V, will program that M27W102. high level input inhibits other M27W102s from being programmed. Program Verify verify (read) should performed programmed bits determine that they were correctly programmed. verify accomplished with VIL, VIH, 12.75V 6.25V.
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M27W102
On-Board Programming M27W102 directly programmed application circuit. relevant Application Note AN620. Electronic Signature Electronic Signature (ES) mode allows reading binary code from EPROM that will identify manufacturer type. This mode intended programming equipment automatically match device programmed with corresponding programming algorithm. mode functional 25°C ambient temperature range that required when programming M27W102. activate mode, programming equipment must force 11.5V 12.5V address line M27W102 with identifier bytes then sequenced from device outputs toggling address line from VIH. other address lines must held during Electronic Signature mode. Byte VIL) represents manufacturer code byte VIH) device identifier code. STMicroelectronics M27W102, these identifier bytes given Table read-out outputs Note that M27W102 M27C1002 have same byte identifier. ERASURE OPERATION (applies EPROM) erasure characteristics M27W102 such that erasure begins when cells exposed light with wavelengths shorter than approximately should noted that sunlight some type fluorescent lamps have wavelengths range. Research shows that constant exposure room level fluorescent lighting could erase typical M27W102 about years, while would take approximately week cause erasure when exposed direct sunlight. M27W102 exposed these types lighting conditions extended periods time, suggested that opaque labels over M27W102 window prevent unintentional erasure. recommended erasure procedure M27W102 exposure short wave ultraviolet light which wavelength integrated dose (i.e. intensity exposure time) erasure should minimum W-sec/cm2. erasure time with this dosage approximately minutes using ultraviolet lamp with 12000 µW/cm2 power rating. M27W102 should placed within inch) lamp tubes during erasure. Some lamps have filter their tubes which should removed before erasure.
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M27W102
Table Ordering Information Scheme
Example: Device Type Supply Voltage 2.7V 3.6V Device Function Mbit (64Kb x16) Speed (1,2) -100 Design -120 -150 -200 Package FDIP40W PDIP40 PLCC44 TSOP40: Temperature Range Optio Tape Reel Packing M27W102
Note:
High Speed, Characteristics section further information. This speed also guarantees 70ns access time 3.0V 3.6V. These speeds replaced 100ns. Packages option available request. Please contact STMicroelectronics local Sales Office.
list available options (Speed, Package, etc.) further information aspect this device, please contact STMicroelectronics Sales Office nearest you. Table Revision History
Date July 1999 First Issue FDIP40W Package Dimension, added (Table TSOP40 Package Dimension changed (Table 70°C Temperature Range deleted changed (Table Revision Detail
04/04/00
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M27W102
Table FDIP40W Ceramic Frit-seal with window, Package Mechanical Data
Symbol 8.13 2.54 14.99 48.26 15.24 1.45 0.51 3.91 3.89 0.41 0.23 51.79 13.06 16.18 3.18 1.52 5.72 1.40 4.57 4.50 0.56 0.30 52.60 13.36 18.03 4.10 2.49 0.320 0.100 0.590 1.900 0.600 0.057 0.020 0.154 0.153 0.016 0.009 2.039 0.514 0.637 0.125 0.060 inches 0.225 0.055 0.180 0.177 0.022 0.012 2.071 0.526 0.710 0.161 0.098
Figure FDIP40W Ceramic Frit-seal with window, Package Outline
FDIPW-a
Drawing scale.
11/15
M27W102
Table PDIP40 Plastic DIP, mils width, Package Mechanical Data
Symbol 2.54 15.24 48.26 4.45 0.64 0.38 3.56 0.38 1.14 0.20 51.78 14.80 13.46 15.24 3.05 1.52 3.91 0.53 1.78 0.31 52.58 16.26 13.99 17.78 3.81 2.29 0.100 0.600 1.900 0.175 0.025 0.015 0.140 0.015 0.045 0.008 2.039 0.583 0.530 0.600 0.120 0.060 0.700 0.150 0.090 0.154 0.021 0.070 0.012 2.070 0.640 0.551 inche
Figure PDIP40 Plastic DIP, mils width, Package Outline
PDIP
Drawing scale.
12/15
M27W102
Table PLCC44 lead Plastic Leaded Chip Carrier, Package Mechanical Data
Symbol 0.89 1.27 4.20 2.29 0.33 0.66 17.40 16.51 14.99 17.40 16.51 14.99 0.00 0.10 4.70 3.04 0.51 0.53 0.81 17.65 16.66 16.00 17.65 16.66 16.00 0.25 0.035 0.050 0.165 0.090 0.013 0.026 0.685 0.650 0.590 0.685 0.650 0.590 0.000 0.004 0.185 0.120 0.020 0.021 0.032 0.695 0.656 0.630 0.695 0.656 0.630 0.010 inche
Figure PLCC44 lead Plastic Leaded Chip Carrier, Package Outline
0.51 (.020)
D2/E2
1.14 (.045)
PLCC
Drawing scale.
13/15
M27W102
Table TSOP40 lead Plastic Thin Small Outline, Package Mechanical Data
Symbol 0.500 0.050 0.950 0.170 0.100 13.800 12.300 9.900 0.500 1.200 0.150 1.050 0.270 0.210 14.200 12.500 10.100 0.700 0.100 0.0197 0.0020 0.0374 0.0067 0.0039 0.5433 0.4843 0.3898 0.0197 0.0472 0.0059 0.0413 0.0106 0.0083 0.5591 0.4921 0.3976 0.0276 0.0039 inch
Figure TSOP40 lead Plastic Thin Small Outline, Package Outline
TSOP-a
Drawing scale.
14/15
M27W102
Information furnished believed accurate reliable. However, STMicroelectronics assumes responsibility consequences such information infringement patents other rights third parties which result from use. license granted implication otherwise under patent patent rights STMicroelectronics. Specifications mentioned this publication subject change without notice. This publication supersedes replaces information previously supplied. STMicroelectronics products authorized critical components support devices systems without express written approval STMicroelectronics. logo registered trademark STMicroelectronics 2000 STMicroelectronics Rights Reserved other names property their respective owners. STMicroelectronics GROUP COMPANIES Australia Brazil China Finland France Germany Hong Kong India Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom U.S.A http://w ww.st.com
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Mbit (64Kb x16) Voltage EPROM EPROM 2.7V 3.6V VOLTAGE READ OPERAT

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