1495.2 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs RFP12P0

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1495.2 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs RFP12P0

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RFP12P08, RFP12P10
1495.2
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
RFP12P08, RFP12P10 P-Channel enhancement mode silicon gate power field effect transistors designed applications such switching regulators, switching convertors, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. Formerly developmental type TA17511.
Features
12A, 100V rDS(ON) 0.300 Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device Related Literature TB334 "Guidelines Soldering Surface Mount Components Boards"
Ordering Information
PART NUMBER RFP12P08 RFP12P10 PACKAGE TO-220AB TO-220AB BRAND RFP12P08 RFP12P10
Symbol
NOTE: When ordering, include entire part number.
Packaging
TO-220AB
SOURCE DRAIN GATE
DRAIN (TAB)
4-161
CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999.
RFP12P08, RFP12P10
Absolute Maximum Ratings
25oC, Unless Otherwise Specified RFP12P08 Drain Source Voltage (Note Drain Gate Voltage (RGS 20K) (Note VDGR Continuous Drain Current Continuous Pulsed Drain Current (Note Gate Source Voltage Maximum Power Dissipation Linear Derating Factor Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg W/oC
RFP12P10 -100 -100
UNITS
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 125oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS 250µA, -100 VGS(TH) IDSS VDS, 250µA Rated BVDSS, Rated BVDSS, 125oC -25V, 1MHz (Figure RFP12P08, RFP12P10 ±100 -3.6 0.300 1500 1.67
oC/W
UNITS
Drain Source Breakdown Voltage RFP12P08 RFP12P10 Gate Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Drain Source Voltage (Note Drain Source Resistance (Note Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance, Junction Case
IGSS VDS(ON) rDS(ON) td(ON) td(OFF) CISS COSS CRSS
±20V, 12A, -10V 12A, -10V, (Figures 12A, 50V, 4.1, -10V (Figure
Source Drain Diode Specifications
PARAMETER Source Drain Diode Voltage (Note Diode Reverse Recovery Time NOTES: Pulse Test: Pulse Width 300µs Max, Duty Cycle Repetitive rating: pulse width limited maximum junction temperature. SYMBOL TEST CONDITIONS -12A -12A, dISD/dt 100A/µs UNITS
4-162
RFP12P08, RFP12P10 Typical Performance Curves
POWER DISSIPATION MULTIPLIER DRAIN CURRENT CASE TEMPERATURE (oC)
CASE TEMPERATURE (oC)
FIGURE NORMALIZED POWER DISSIPATION CASE TEMPERATURE
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
OPERATION THIS AREA LIMITED rDS(ON) DRAIN CURRENT CONTINUOUS
25oC RATED DRAIN CURRENT
PULSE DURATION 80µs DUTY CYCLE 0.5% 25oC -20V
-10V
RFP12P08 RFP12P10
VDS, DRAIN SOURCE
1000
VDS, DRAIN SOURCE VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
FIGURE SATURATION CHARACTERISTICS
IDS(ON), DRAIN SOURCE CURRENT
-10V PULSE DURATION 80µs DUTY CYCLE 0.5% -40oC 25oC DRAIN SOURCE RESISTANCE
-10V PULSE DURATION 80µs DUTY CYCLE 0.5% 125oC
125oC
25oC -40oC
125oC -40oC VGS, GATE SOURCE VOLTAGE
DRAIN CURRENT
FIGURE TRANSFER CHARACTERISTICS
FIGURE DRAIN SOURCE RESISTANCE GATE VOLTAGE DRAIN CURRENT
4-163
RFP12P08, RFP12P10 Typical Performance Curves
NORMALIZED DRAIN SOURCE RESISTANCE 12A, -10V PULSE DURATION 80µs DUTY CYCLE 0.5% NORMALIZED GATE THRESHOLD VOLTAGE
(Continued)
250µA
JUNCTION TEMPERATURE (oC)
JUNCTION TEMPERATURE (oC)
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
2400 2000 CAPACITANCE (PF) 1600 1200 COSS CRSS VDS, DRAIN SOURCE VOLTAGE CISS 1MHz CISS CRSS COSS
FIGURE NORMALIZED GATE THRESHOLD VOLTAGE JUNCTION TEMPERATURE
VDS, DRAIN SOURCE VOLTAGE BVDSS BVDSS GATE SOURCE VOLTAGE IG(REF) 0.92mA -10V VGS, GATE SOURCE VOLTAGE
0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS DRAIN SOURCE VOLTAGE
IG(REF) IG(ACT)
TIME (µs)
IG(REF) IG(ACT)
NOTE: Refer Intersil Application Notes AN7254 AN7260 FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE FIGURE NORMALIZED SWITCHING WAVEFORMS CONSTANT GATE CURRENT
Test Circuits Waveforms
td(ON) tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
4-164
RFP12P08, RFP12P10
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Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
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1495.2 12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs RFP12P0

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