4447.4 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These

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4447.4 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These

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HRF3205, HRF3205S
4447.4
100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs
These N-Channel enhancement mode silicon gate power field effect transistors. They advanced power MOSFETs designed, tested, guaranteed withstand specified level energy breakdown avalanche mode operation. these power MOSFETs designed applications such switching regulators, switching converters, motor drivers, relay drivers, drivers high power bipolar switching transistors requiring high speed gate drive power. These types operated directly from integrated circuits. NOTE: Calculated continuous current based maximum allowable junction temperature. Package limited continuous, Figure
Features
100A, (See Note) On-Resistance, rDS(ON) 0.008 Temperature Compensating PSPICE® Model Thermal Impedance SPICE Model Rating Curve Related Literature TB334, "Guidelines Soldering Surface Mount Components Boards"
Symbol
Ordering Information
PART NUMBER HRF3205 HRF3205S PACKAGE TO-220AB TO-263AB BRAND HRF3205 HRF3205S
NOTE: When ordering, entire part number. suffix obtain TO-263AB variant tape reel, e.g., HRF3205ST.
Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE DRAIN (FLANGE) GATE SOURCE
JEDEC TO-263AB
DRAIN (FLANGE)
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CAUTION: These devices sensitive electrostatic discharge; follow proper Handling Procedures. PSPICE® registered trademark MicroSim Corporation. http://www.intersil.com 407-727-9207 Copyright Intersil Corporation 1999
HRF3205, HRF3205S
25oC, Unless Othewise Specified Drain Source Voltage (Note VDSS Drain Gate Voltage (RGS 20k) (Note VDGR Gate Source Voltage .VGS Drain Current Continuous Pulsed Drain Current (Note Pulsed Avalanche Rating .EAS Power Dissipation Derate Above 25oC Operating Storage Temperature TSTG Maximum Temperature Soldering Leads 0.063in (1.6mm) from Case 10s. Package Body 10s, Techbrief Tpkg
Absolute Maximum Ratings
±20V Figure 1.17
W/oC
CAUTION: Stresses above those listed "Absolute Maximum Ratings" cause permanent damage device. This stress only rating operation device these other conditions above those indicated operational sections this specification implied.
NOTE: 25oC 150oC.
Electrical Specifications
PARAMETER
25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS 250µA, VDS, 250µA 55V, 44V, 150oC ±20V Reference 25oC, 250µA 59A, (Figure 28V, 59A, 0.47, 10V, 44V, 59A, 10V, Ig(REF) (Figure 25V, 1MHz (Figure Measured From Contact Modified MOSFET Screw Center Symbol Showing Internal Devices InMeasured From Drain ductances Lead, (0.25in) From Package Center Measured From Source Lead, (0.25in) From Header Source Bonding
0.057 0.0065 4000 1300
0.008
UNITS
Drain Source Breakdown Voltage Gate Source Threshold Voltage Zero Gate Voltage Drain Current
Gate Source Leakage Current Breakdown Voltage Temperature Coefficient Drain Source Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Source Inductance
IGSS V(BR)DSS/ rDS(ON) td(ON) td(OFF) CISS COSS CRSS
Internal Drain Inductance
Thermal Resistance Junction Case Thermal Resistance Junction Ambient
TO-220 TO-263 (PCB Mount, Steady State)
0.85
oC/W oC/W oC/W
4-30
HRF3205, HRF3205S
Source Drain Diode Specifications
PARAMETER Continuous Source Drain Current Pulsed Source Drain Current (Note SYMBOL ISDM TEST CONDITIONS MOSFET Symbol Showing Integral Reverse Junction Diode
(Note
UNITS
Source Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge NOTE:
(Note 59A, dISD/dt 100A/µs (Note 59A, dISD/dt 100A/µs (Note
Repetitive rating; pulse width limited maximum junction temperature (See Figure
Typical Performance Curves
1000 DRAIN SOURCE CURRENT DECENDING ORDER 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 DRAIN SOURCE CURRENT DECENDING ORDER 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
20µs PULSE WIDTH 25oC VDS, DRAIN SOURCE VOLTAGE
20µs PULSE WIDTH 175oC VDS, DRAIN SOURCE VOLTAGE
FIGURE OUTPUT CHARACTERISTICS
FIGURE OUTPUT CHARACTERISTICS
1000 DRAIN SOURCE CURRENT(A) NORMALIZED DRAIN SOURCE RESISTANCE
98A, PULSE DURATION 80µs DUTY CYCLE 0.5%
25oC
175oC
PULSE DURATION 80µs DUTY CYCLE 0.5%
VGS, GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (oC)
FIGURE TRANSFER CHARACTERISTICS
FIGURE NORMALIZED DRAIN SOURCE RESISTANCE JUNCTION TEMPERATURE
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HRF3205, HRF3205S Typical Performance Curves
8000 VGS, GATE SOURCE VOLTAGE 7000 CAPACITANCE (pF) 6000 5000 CISS 4000 3000 COSS 2000 1000 VDS, DRAIN SOURCE VOLTAGE CRSS 1MHz CISS CRSS COSS
(Continued)
GATE CHARGE (nC)
FIGURE CAPACITANCE DRAIN SOURCE VOLTAGE
FIGURE GATE CHARGE WAVEFORMS CONSTANT GATE CURRENT
1000 ISD, REVERSE DRAIN CURRENT(A)
PULSE DURATION 80µs DUTY CYCLE 0.5% 175oC
1000
DRAIN CURRENT
10µs OPERATION THIS AREA LIMITED rDS(ON) 100µs 10ms
25oC
VSD, SOURCE DRAIN VOLTAGE
VDSS(MAX) VDS, DRAIN SOURCE VOLTAGE
FIGURE SOURCE DRAIN DIODE FORWARD VOLTAGE
FIGURE FORWARD BIAS SAFE OPERATING AREA
1000 IAS, AVALANCHE CURRENT
DRAIN CURRENT
(L)(IAS)/(1.3*RATED BVDSS VDD) (L/R)ln[(IAS*R)/(1.3*RATED BVDSS VDD)
STARTING 25oC
CURRENT LIMITED PACKAGE
STARTING 150oC
CASE TEMPERATURE (oC)
0.01
tAV, TIME AVALANCHE (ms)
FIGURE MAXIMUM CONTINUOUS DRAIN CURRENT CASE TEMPERATURE
FIGURE UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
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HRF3205, HRF3205S Typical Performance Curves
DUTY CYCLE DESCENDING ORDER 0.05 0.02 0.01
(Continued)
THERMAL IMPEDANCE
ZJC, NORMALIZED
NOTES: DUTY FACTOR: t1/t2 PEAK 10-3 10-2 10-1 RECTANGULAR PULSE DURATION
0.01
SINGLE PULSE 10-5 10-4
FIGURE NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
Test Circuits Waveforms
BVDSS VARY OBTAIN REQUIRED PEAK
0.01
FIGURE UNCLAMPED ENERGY TEST CIRCUIT
FIGURE UNCLAMPED ENERGY WAVEFORMS
Qg(TOT)
IG(REF) IG(REF)
FIGURE GATE CHARGE TEST CIRCUIT
FIGURE GATE CHARGE WAVEFORM
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HRF3205, HRF3205S Test Circuits Waveforms
(Continued)
td(ON)
tOFF td(OFF)
PULSE WIDTH
FIGURE SWITCHING TIME TEST CIRCUIT
FIGURE RESISTIVE SWITCHING WAVEFORMS
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HRF3205, HRF3205S PSPICE Electrical Model
SUBCKT HRF3205P3
4.9e-9 4.9e-9 3.45e-9
7/25/97
LDRAIN DPLCAP RLDRAIN DBREAK EBREAK MWEAK MMED MSTRO LSOURCE RSOURCE RLSOURCE RVTHRES VBAT RBREAK RVTEMP SOURCE DRAIN RSLC1 ESLC RDRAIN EVTHRES
RSLC2
EBREAK EVTHRES EVTEMP
GATE
LGATE EVTEMP RGATE
LDRAIN 1e-9 LGATE 2.6e-9 LSOURCE 1.1e-9 LGATE LSOURCE 0.0085 MMED MMEDMOD MSTRO MSTROMOD MWEAK MWEAKMOD
RLGATE
RBREAK RBREAKMOD RDRAIN RDRAINMOD 3.5e-4 RGATE 0.36 RLDRAIN RLGATE RLSOURCE RSLC1 RSLCMOD 1e-6 RSLC2 RSOURCE RSOURCEMOD 4.5e-3 RVTHRES RVTHRESMOD RVTEMP RVTEMPMOD S1AMOD S1BMOD S2AMOD S2BMOD
VBAT ESLC .MODEL DBODYMOD 4.25e-12 1.8e-3 TRS1 2.75e-3 TRS2 5e-6 5.95e-9 4e-7 0.55) .MODEL DBREAKMOD 0.06 TRS1 -3e-3 TRS2 3e-6) .MODEL DPLCAPMOD (CJO 4.45e-9 1e-30 0.88 1.45) .MODEL MMEDMOD NMOS (VTO 2.93 1e-30 .MODEL MSTROMOD NMOS (VTO 3.23 1e-30 .MODEL MWEAKMOD NMOS (VTO 2.35 0.02 1e-30 .MODEL RBREAKMOD (TC1 8e-4 4e-6) .MODEL RDRAINMOD (TC1 8e-2 5e-6) .MODEL RSLCMOD (TC1 1e-4 1.05e-6) .MODEL RSOURCEMOD (TC1 1e-4 1.5e-5) .MODEL RVTHRESMOD (TC1 -2.3e-3 -1.2e-5) .MODEL RVTEMPMOD (TC1 -2.2e-3 -7e-6) .MODEL S1AMOD VSWITCH (RON 1e-5 .MODEL S1BMOD VSWITCH (RON 1e-5 .MODEL S2AMOD VSWITCH (RON 1e-5 .MODEL S2BMOD VSWITCH (RON 1e-5 .ENDS ROFF ROFF ROFF ROFF VOFF= VOFF= VOFF= 2.5) VOFF=
NOTE: further discussion PSPICE model, consult PSPICE Sub-Circuit Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written William Hepp Frank Wheatley.
4-35
DBODY DBODYMOD DBREAK DBREAKMOD DPLCAP DPLCAPMOD
DBODY
HRF3205, HRF3205S SPICE Thermal Model
July HRF3205 CTHERM1 2.53e-5 CTHERM2 1.38e-3 CTHERM3 7.00e-3 CTHERM4 2.50e-2 CTHERM5 1.33e-1 CTHERM6 5.75e-1 RTHERM1 7.78e-4 RTHERM2 8.55e-3 RTHERM3 3.00e-2 RTHERM4 1.42e-1 RTHERM5 2.65e-1 RTHERM6 2.33e-1
RTHERM1 CTHERM1 JUNCTION
RTHERM2
CTHERM2
RTHERM3
CTHERM3
RTHERM4
CTHERM4
RTHERM5
CTHERM5
RTHERM6
CTHERM6
CASE
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Intersil semiconductor products sold description only. Intersil Corporation reserves right make changes circuit design and/or specifications time without notice. Accordingly, reader cautioned verify that data sheets current before placing orders. Information furnished Intersil believed accurate reliable. However, responsibility assumed Intersil subsidiaries use; infringements patents other rights third parties which result from use. license granted implication otherwise under patent patent rights Intersil subsidiaries.
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4447.4 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs These

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