2N3416 2N3417 TO-92 General Purpose Amplifier This devi

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2N3416 2N3417 TO-92 General Purpose Amplifier This devi

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2N3416 2N3417
2N3416 2N3417
TO-92
General Purpose Amplifier
This device designed general purpose amplifiers switches requiring collector currents Sourced from Process PN100A characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous
25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
+150
Units
Operating Storage Junction Temperature Range
*These ratings limiting values above which serviceability semiconductor device impaired.
NOTES: These ratings based maximum junction temperature degrees These steady state limits. factory should consulted applications involving pulsed duty cycle operations.
Thermal Characteristics
Symbol
25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above Thermal Resistance, Junction Case Thermal Resistance, Junction Ambient
2N3416 2N3417 83.3
Units
mW/°C °C/W °C/W
1997 Fairchild Semiconductor Corporation
2N3416 2N3417
General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
25°C unless otherwise noted
Test Conditions
Units
CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current 100°C
CHARACTERISTICS*
Current Gain 2N3416 2N3417
VCE(sat VBE(sat)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Small-Signal Current Gain 2N3416 2N3417
*Pulse Test: Pulse Width Duty Cycle 2.0%

2N3416 2N3417 TO-92 General Purpose Amplifier This devi

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