These N-Channel enhancement mode power field effect transistors produc
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NDP5060 NDB5060 N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process been especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such automotive, DC/DC converters, motor controls, other battery powered circuits where fast switching, in-line power loss, resistance transients needed.
October 1996
Features
RDS(ON) 0.05 VGS= Critical electrical parameters specified elevated temperature. Rugged internal source-drain diode eliminate need external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design extremely RDS(ON). TO-220 TO-263 (D2PAK) package both through hole surface mount applications.
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage
25°C unless otherwise noted
NDP5060 0.45
NDB5060
Units
Drain-Gate Voltage (RGS Gate-Source Voltage Continuous Nonrepetitive Drain Current Continuous Pulsed
Total Power Dissipation 25°C Derate above 25°C
W/°C
TJ,TSTG
Operating Storage Temperature Range
NDP5060 Rev.A
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE AVALANCHE RATINGS (Note BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current
CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 125°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VGS, 125°C Static Drain-Source On-Resistance 125°C On-State Drain Current Forward Transconductance 0.04 0.07 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.05 0.08
DYNAMIC CHARACTERISTICS
Ciss Coss Crss
tD(on) tD(off)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RGEN
NDP5060 Rev.A
Electrical Characteristics 25°C unless otherwise noted)
Symbol Parameter Conditions Units DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current (Note dIF/dt A/µs
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 62.5 °C/W °C/W
Note: Pulse Test: Pulse Width Duty Cycle 2.0%.
NDP5060 Rev.A
Typical Electrical Characteristics
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE CURRENT
DS(on) NORMALIZED
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Gate Voltage Drain Current.
DRAIN-SOURCE ON-RESISTANCE
1.75
DRAIN-SOURCE ON-RESISTANCE
NORMALIZED
DS(ON), NORMALIZED
125°C
1.25
DS(on)
25°C
0.75
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
25°C
DRAIN CURRENT
GS(th) NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE
-55°C 125°C
250µA
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDP5060 Rev.A
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
REVERSE DRAIN CURRENT
250µA
1.15
125°C 25°C
NORMALIZED
1.05
-55°C
0.01
0.95
0.001
JUNCTION TEMPERATURE (°C)
0.0001 BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Current Temperature.
1500
GATE-SOURCE VOLTAGE
1000
Ciss
CAPACITANCE (pF)
Coss
Crss
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
INVERTED
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDP5060 Rev.A
Typical Electrical Characteristics (continued)
TRANSCONDUCTANCE (SIEMENS)
DRAIN CURRENT
-55°C 25°C
125°C
SINGLE PULSE =2.2 25°C
DRAIN CURRENT
DRAIN-SOURCE VOLTAGE (V))
Figure Transconductance Variation with Drain Current Temperature.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
r(t) =2.2 °C/W
P(pk)
0.05 0.02 0.01
0.05 0.03
Single Pulse
Duty Cycle,
1000 3000 10000
,TIME (ms)
Figure Transient Thermal Response Curve.
NDP5060 Rev.A
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