These N-Channel enhancement mode power field effect transistors produc

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NDH8436 N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors produced using National's proprietary, high cell density, DMOS technology. This very high density process especially tailored minimize on-state resistance, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage applications such disk drive motor control, battery powered circuits, DC/DC conversion where fast switching, in-line power loss, resistance transients needed.
March 1996
Features
5.8A, 30V. RDS(ON) 0.03 RDS(ON) 0.045 4.5V High density cell design extremely RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power current handling capability.
SOT-8 (SuperSOTTM-8) Absolute Maximum Ratings 25°C unless otherwise noted
Symbol VDSS VGSS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
(Note (Note (Note (Note
NDH8436
Units
TJ,TSTG
Operating Storage Temperature Range
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note (Note
°C/W °C/W
NDH8436.SAM
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Units
CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current 55°C Gate Body Leakage, Forward Gate Body Leakage, Reverse VDS= VGS, 125°C Static Drain-Source On-Resistance 125°C ID(on) Ciss Coss Crss tD(on) tD(off) On-State Drain Current Forward Transconductance 0.022 0.032 0.035 -100
CHARACTERISTICS (Note Gate Threshold Voltage 0.03 0.06 0.045
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note Turn Delay Time Turn Rise Time Turn Delay Time Turn Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VGEN RGEN
NDH8436.SAM
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions
(Note
Units
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage
JA(t
TJ-TA JC+RCA(t
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 70oC/W when mounted cpper. 125oC/W when mounted 0.026 cpper. 135oC/W when mounted 0.005 cpper.
Scale letter size paper
Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDH8436.SAM
Typical Electrical Characteristics
=10V
DRAIN-SOURCE CURRENT
DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED
3.0V
DRAIN-SOURCE VOLTAGE
DRAIN CURRENT
Figure On-Region Characteristics.
Figure On-Resistance Variation with Drain Current Gate Voltage.
DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
5.8A
125°C
DS(ON), NORMALIZED
25°C
-55°C
JUNCTION TEMPERATURE (°C)
DRAIN CURRENT
Figure On-Resistance Variation with Temperature.
Figure On-Resistance Variation with Drain Current Temperature.
DRAIN CURRENT
-55°C
125°C 25°C
GATE-SOURCE THRESHOLD VOLTAGE
250µA
NORMALIZED
GATE SOURCE VOLTAGE
JUNCTION TEMPERATURE (°C)
Figure Transfer Characteristics.
Figure Gate Threshold Variation with Temperature.
NDH8436.SAM
Typical Electrical Characteristics (continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
REVERSE DRAIN CURRENT
250µA
1.08
NORMALIZED
125°C 25°C -55°C
1.04
0.96
0.01
0.92
JUNCTION TEMPERATURE (°C)
0.001
BODY DIODE FORWARD VOLTAGE
Figure Breakdown Voltage Variation with Temperature.
Figure Body Diode Forward Voltage Variation with Source Current Temperature.
2000 1500 GATE-SOURCE VOLTAGE 1000 CAPACITANCE (pF)
5.8A
DRAIN SOURCE VOLTAGE
GATE CHARGE (nC)
Figure Capacitance Characteristics.
Figure Gate Charge Characteristics.
d(on)
d(off)
VOUT
INVERTED
I10%
PULSE WIDTH
Figure Switching Test Circuit.
Figure Switching Waveforms.
NDH8436.SAM
Typical Electrical Thermal Characteristics (continued)
STEADY-STATE POWER DISSIPATION
=10V
TRANSCONDUCTANCE (SIEMENS)
-55°C
25°C
125°C
4.5"x5" FR-4 Board Still
DRAIN CURRENT
COPPER MOUNTING AREA
Figure Transconductance Variation with Drain Current Temperature.
Figure SOT-8 Maximum Steady-State Power Dissipation versus Copper Mounting Area.
STEADY-STATE DRAIN CURRENT
DRAIN CURRENT
0.03 0.01
SINGLE PULSE Note 25°C
4.5"x5" FR-4 Board Still
COPPER MOUNTING AREA
DRAIN-SOURCE VOLTAGE
Figure Maximum Steady-State Drain Current versus Copper Mounting Area.
Figure Maximum Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05
0.02 0.05
r(t), NORMALIZED EFFECTIVE
r(t) Note
P(pk)
0.03 0.02 0.01
0.01 Single Pulse
Duty Cycle,
.001
TIME (sec)
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDH8436.SAM
NDH8436.SAM

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