NDM3001 three phase brushless motor driver consists three N-Channel P-
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NDM3001 Phase Brushless Motor Driver
NDM3001 three phase brushless motor driver consists three N-Channel P-Channel MOSFETs half bridge configuration. These devices produced using National's proprietary, high cell density DMOS technology. This very high density process tailored minimize on-state resistance which reduces power loss, provide superior switching performance, withstand high energy pulses avalanche commutation modes. These devices particularly suited voltage phase motor driver such disk drive spindle motor control other half bridge applications.
February 1997
Features
±2.9 2.5W High density cell design extremely RDS(ON). High power current handling capability. Industry standard SOIC-16 surface mount package.
11,14
1,16 4,13
Absolute Maximum Ratings
Symbol Parameter VDSS VGSS Drain-Source Voltage (All Types) Gate-Source Voltage (All Types)
25°C unless otherwise noted
NDM3001 ±2.9
(Note
Units
Drain Current Q1+Q4 Q1+Q6 Q3+Q2 Continuous Q3+Q6 Q5+Q2 Q5+Q4 Pulsed
(Note (Note (Note
Total Power Dissipation Q1+Q4 Q1+Q6 Q3+Q2 Q3+Q6 Q5+Q2 Q5+Q4
TJ,TSTG
Operating Storage Temperature Range
NDM3001 Rev.C
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Q1+Q4 Q1+Q6 Q3+Q2 (Note Q3+Q6 Q5+Q2 Q5+Q4 Thermal Resistance, Junction-to-Case Q1+Q4 Q1+Q6 Q3+Q2 (Note Q3+Q6 Q5+Q2 Q5+Q4
°C/W
°C/W
Electrical Characteristics
Symbol Parameter CHARACTERISTICS BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
25°C unless otherwise noted)
Conditions
Type
Units
TJ=55
Gate Body Leakage, Forward
(Note
±100
CHARACTERISTICS
Gate Threshold Voltage
VGS, -250 TJ=125oC VGS, TJ=125
0.75
-1.6 -1.3 0.19 0.27
-1.5 0.24 0.45 0.36
0.75
RDS(ON)
Static Drain-Source On-Resistance
-2.9 TJ=125 -4.5 -2.2 TJ=125oC
0.09 0.115 0.126 0.221 0.13 0.16
ID(on)
On-State Drain Current
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance
Reverse Transfer Capacitance
NDM3001 Rev.C
ELECTRICAL CHARACTERISTICS 25°C unless otherwise noted)
Symbol Parameter Conditions Type Units SWITCHING CHARACTERISTICS (Note tD(on) tD(off) Turn Delay Time Turn Rise Time VGEN RGEN Turn Delay Time VGEN RGEN Total Gate Charge -2.9 Gate-Drain Charge
Turn Fall Time
Gate-Source Charge
DRAIN-SOURCE DIODE CHARACTERISTICS MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage -1.2A
(Note (Note
-1.2 -0.9 -1.2
Notes: junction-to-case case-to-ambient thermal resistance where case thermal reference defined solder mounting surface drain pins. guaranteed design while determined user's board design.
DS(ON)@T
Typical using board layouts shown below 4.5"x5" FR-4 still environment: 50oC/W when mounted copper. 80oC/W when mounted 0.027 copper. 90oC/W when mounted 0.0028 copper.
Scale letter size paper Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.
NDM3001 Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE CURRENT
=10V
DRAIN-SOURCE CURRENT
-10V
-7.0
-6.0 -5.5 -5.0
-4.5 -4.0 -3.5 -3.0
DRAIN-SOURCE VOLTAGE
DRAIN-SOURCE VOLTAGE
Figure N-Channel On-Region Characteristic.
Figure P-Channel On-Region Characteristics.
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V
-4.0V
DRAIN CURRENT
DRAIN CURRENT
-4.5 -5.0 -5.5 -6.0 -7.0
Figure N-Channel On-Resistance Variation with Gate Voltage Drain Current.
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE
Figure P-Channel On-Resistance Variation with Gate Voltage Drain Current.
DS(ON) NORMALIZED
2.9A
DS(ON) NORMALIZED
-2.9A
-10V
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel On-Resistance Variation with Temperature.
Figure P-Channel On-Resistance Variation with Temperature.
NDM3001 Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE ON-RESISTANCE
DS(on) NORMALIZED DRAIN-SOURCE ON-RESISTANCE
125°C
-10V
DS(on) NORMALIZED
125°C
25°C
25°C
-55°C
-55°C
DRAIN CURRENT
DRAIN CURRENT
Figure N-Channel On-Resistance Variation with Drain Current Temperature.
Figure P-Channel On-Resistance Variation with Drain Current Temperature.
=10V
DRAIN CURRENT
-10V
DRAIN CURRENT
-55°C
25°C 125°C
-55°C
25°C 125°C
GATE SOURCE VOLTAGE
GATE SOURCE VOLTAGE
Figure N-Channel Transfer Characteristics.
NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE GATE-SOURCE THRESHOLD VOLTAGE
Figure P-Channel Transfer Characteristics.
GS(th) NORMALIZED
250µA
250µA
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel Gate Threshold Variation with Temperature.
Figure P-Channel Gate Threshold Variation with Temperature.
NDM3001 Rev.C
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
1.08
250µA
1.08
1.06 1.04 1.02 0.98 0.96 0.94
-250µA
NORMALIZED
1.04
0.96
0.92
NORMALIZED
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Figure N-Channel Breakdown Voltage Variation with Temperature.
CAPACITANCE (pF)
Figure P-Channel Breakdown Voltage Variation with Temperature.
CAPACITANCE (pF)
Ciss Coss
DRAIN SOURCE VOLTAGE
Crss
DRAIN SOURCE VOLTAGE
Figure N-Channel Capacitance Characteristics.
-VGS GATE-SOURCE VOLTAGE
Figure P-Channel Capacitance Characteristics.
GATE-SOURCE VOLTAGE
2.9A
-2.9A
-10V -15V
GATE CHARGE (nC)
GATE CHARGE (nC)
Figure N-Channel Gate Charge Characteristics.
Figure P-Channel Gate Charge Characteristics.
NDM3001 Rev.C
Typical Electrical Characteristics
125°C
REVERSE DRAIN CURRENT
REVERSE DRAIN CURRENT
125°C 25°C
25°C -55°C
0.01
0.01
-55°C
0.001
0.001
0.0001
BODY DIODE FORWARD VOLTAGE
0.0001
BODY DIODE FORWARD VOLTAGE
Figure19. N-Channel Body Diode Forward Voltage Variation with Source Current Temperature.
TRANSCONDUCTANCE (SIEMENS)
Figure P-Channel Body Diode Forward Voltage Variation with Source Current Temperature.
TRANSCONDUCTANCE (SIEMENS)
-55°C 25°C 125°C
=-10V
-55°C 25°C
125°C
DRAIN CURRENT
DRAIN CURRENT
Figure N-Channel Transconductance Variation with Drain Current Temperature.
Figure P-Channel Transconductance Variation with Drain Current Temperature.
d(on)
toff td(off)
VOUT
PULSE WIDTH
Figure P-Channel Switching Test Circuit.
Figure P-Channel Switching Waveforms.
NDM3001 Rev.C
Typical Thermal Electrical Characteristics
POWER DISSIPATION
DRAIN CURRENT
4.5"x5" FR-4 Still
4.5"x5" FR-4 Still -10V
COPPER MOUNTING AREA
COPPER MOUNTING AREA
Figure SOIC-16 Leadframe Device Power Dissipation versus Copper Mounting Area.
Figure P-Ch Drain Current Capability versus Copper Mounting Area.
DRAIN CURRENT
DRAIN CURRENT
IMIT
4.5"x5" FR-4 Still =10V
0.03 0.01
±10V SINGLE PULSE Note 25°C
COPPER MOUNTING AREA
±VDS DRAIN-SOURCE VOLTAGE
Figure N-Ch Drain Current Capability versus Copper Mounting Area.
Figure P-Ch Typical Safe Operating Area.
TRANSIENT THERMAL RESISTANCE 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 TIME (sec)
0.05 0.02 0.01 Single Pulse P(pk)
r(t), NORMALIZED EFFECTIVE
r(t) Note
Duty Cycle,
Figure Transient Thermal Response Curve.
Note: Thermal characterization performed using conditions described note Transient thermal response will change depending circuit board design.
NDM3001 Rev.C
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