Volts Amps BATTERY BYPASS CHARGE DIODE SYMBOL VRRM IF(ave) IFSM T
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MX086-4
Volts Amps BATTERY BYPASS CHARGE DIODE
SYMBOL VRRM IF(ave) IFSM Tstg
2.75
Features
Standard spacecraft screening Microsemi PS11.50 suffix letter required, MX086-4 only screened) Designed battery cell bypass Passivated mesa structure very leakage currents stacked package Hermetically sealed, ceramic surface mount power package
Maximum Ratings 25°C (unless otherwise specified)
DESCRIPTION Peak Repetitive Reverse Voltage (NOT BLOCKING DIODE!) Average Rectified Forward Current, 125°C Nonrepetitive Peak Surge Current, half-sinewave Junction Temperature Range (for bypass operation) Storage Temperature Range Thermal Resistance, Junction Case:
DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, SYMBOL CONDITIONS Vdc, 25°C 25°C 25°C 10A, 25°C
MAX. +275 +175
TYP. 3.73 3.86
UNIT Volts Amps Amps °C/W
UNIT
Mechanical Outline
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