MMBD101LT1 SILICON SCHOTTKY BARRIER DIODES Noise Figure-6.0d
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Designed primarily mixer applications suitable also detector ultra-fast switching circuits.Supplied inexpensive plastic package low-cost,high-volume consumer requirements.Also available Surface Mount package.
MMBD101LT1
SILICON SCHOTTKY BARRIER DIODES
Noise Figure-6.0dB Typ@1.0GHz Very Capacitance-Less Than 1.0pF@zero Volts High Forward
CATHODE
ANODE
CASE 318-08, STYLE SOT- (TO-236AB)
MAXIMUM RATINGS
MBD101 MMBD101LT1 Rating symbol value unit Reverse Voltage Volts Forward Power Dissipation @TA=25 Derate above Junction Temperature +150 Storage Temperature Range Tstg +150 DEVICE MARKING MMBD101LT1=4M ELECTRICAL CHARACTERISTICS(TA=25 unless otherwise noted) Characteristic Symbol Reverse Breakdown Voltage V(BR)R (IR= 10µAdc) Diode Capacitance (VR= =1.0MHz,Note1) Forward Voltage(1) 10mAdc) Reverse Leakage (VR= 3.0Vdc) NOTE: MMBD101LT1 also available bulk packaging.Use MMBD101L device title order this device bulk. 0.88 0.02 0.25 Volts
Unit Volts
G15-1/2
MMBD101LT1
TYPICAL CHARACTERISTICS
25°C unless noted)
REVERSE LEAKAGE
FORWARD CURRENT (mA)
3.0Vdc
0.07 0.05
85°C
-40°C
25°C
0.02 0.01
AMBIENT TEMPERATURE (°C)
FORWARD VOLTAGE (VOLTS)
Figure Reverse Leakage
Figure Forward Voltage
LOCAL OSCILLATOR FREQUENCY (TEST CIRCUIT FIGURE
CAPACITANCE (pF)
NOISE FIGURE (dB)
REVERSE VOLTAGE (VOLTS)
LOCAL OSCILLATOR POWER (mW)
Figure Capacitance
Figure Noise Figure
LOCAL OSCILLATOR
NOTES TESTING SPECIFICATIONS
Note measured using capacitance bridge
NOISE SOURCE H.P. 349A
DIODE TUNED MOUNT
(Boonton Electronics Model equivalent). Note Noise figure measured with diode under test tuned diode mount using noise source local oscillator (LO) frequency GHz. power adjusted amplifier MHz, Figure Note measured package having short instead die, using impedance bridge (Boonton Radio Model 250A Meter).
NOISE FIGURE METER H.P. 342A
AMPLIFIER
Figure Noise Figure Test Circuit
G15-2/2
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