formerly General Semiconductor TO-226AA (TO-92) 0.181 (4.6)
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Top Searches for this datasheet
BC556 thru BC558
formerly General Semiconductor
TO-226AA (TO-92)
0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6)
Features
Silicon Epitaxial Planar Transistors switching amplifier applications. These transistors subdivided into three groups according their current gain. type BC556 available groups however, types BC557 BC558 supplied three groups. complementary types, transistors BC546.BC548 recommended. special request, these transistors also manufactured configuration TO-18.
max. 0.022 (0.55) 0.098 (2.5)
Dimensions inches (millimeters)
Mechanical Data
Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk container, 20K/box E7/4K Ammo mag., 20K/box
Bottom View
Maximum Ratings Thermal Characteristics
Parameter Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 Symbol -VCBO
Ratings 25°C ambient temperature unless otherwise specified.
Value
Unit
Collector-Emitter Voltage
-VCES
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Peak Emitter Current Power Dissipation Tamb 25°C Thermal Resistance Junction Ambient Junction Temperature Storage Temperature Range
-VCEO -VEBO -ICM -IBM Ptot
°C/W
+150
Note: Valid provided that leads kept ambient temperature distance from case.
Document Number 88161 09-May-02
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BC556 thru BC558
formerly General Semiconductor
Electrical Characteristics
Parameter
Current gain group
25°C unless otherwise noted)
Symbol -VCEsat -VBEsat -VBE BC556 BC557 BC558 BC556 BC557 BC558
Test Condition -VCE 2mA, -VCE 2mA, 1kHz -VCE 2mA, 1kHz -VCE 2mA, 1kHz
10-4 10-4 10-4
Unit
Small Signal Current Gain
Current gain group
Input Impedance
Current gain group
Output Admittance
Current gain group
Reverse Voltage Transfer Ratio
Current gain group
-VCE 10µA
Current gain group
Current Gain
Current gain group
-VCE
-VCE 100mA 10mA, 0.5mA 100mA, 10mA, 0.5mA 100mA, -VCE -VCE 10mA -VCE -VCE -VCE -VCE 80V, 125°C -VCE 50V, 125°C -VCE 30V, 125°C -VCE 10mA, 100MHz -VCB 10V, 1MHz -VCE 200µA, 1kHz, 200Hz
Collector Saturation Voltage Base Saturation Voltage Base-Emitter Voltage
Collector-Emitter Cutoff Current
-ICES
Gain-Bandwidth Product Collector-Base Capacitance Noise Figure BC556, BC557, BC558
CCBO
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Document Number 88161 09-May-02
BC556 thru BC558
formerly General Semiconductor
Ratings Characteristic Curves 25°C unless otherwise noted)
Document Number 88161 09-May-02
www.vishay.com
BC556 thru BC558
formerly General Semiconductor
Ratings Characteristic Curves 25°C unless otherwise noted)
Relative h-parameters versus collector current
(-IC)
(-IC
-VCE Tamb 25°C
www.vishay.com Document Number 88161 09-May-02
BC556 thru BC558
formerly General Semiconductor
Ratings Characteristic Curves 25°C unless otherwise noted)
Document Number 88161 09-May-02
www.vishay.com
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